Extracting Light from Polymer Light‐Emitting Diodes Using Stamped Bragg Gratings

In this paper, we describe a method for increasing the external efficiency of polymer light‐emitting diodes (LEDs) by coupling out waveguided light with Bragg gratings. We numerically model the waveguide modes in a typical LED structure and demonstrate how optimizing layer thicknesses and reducing waveguide absorption can enhance the grating outcoupling. The gratings were created by a soft‐lithography technique that minimizes changes to the conventional LED structure. Using one‐dimensional and two‐dimensional gratings, we were able to increase the forward‐directed emission by 47 % and 70 %, respectively, and the external quantum efficiency by 15 % and 25 %.     

Platinum Binuclear Complexes as Phosphorescent Dopants for Monochromatic and White Organic Light‐Emitting Diodes

Efficient blue‐, green‐, and red‐light‐emitting organic diodes are fabricated using binuclear platinum complexes as phosphorescent dopants. The series of complexes used here have pyrazolate bridging ligands and the general formula C^∧NPt(μ‐pz)₂PtC^∧N (where C^∧N = 2‐(4′,6′‐difluorophenyl)pyridinato‐N,C^2′, pz = pyrazole ( 1 ), 3‐methyl‐5‐tert‐butylpyrazole ( 2 ), and 3,5‐bis(tert‐butyl)pyrazole ( 3 )). The Pt–Pt distance in the complexes, which decreases in the order 1 > 2 > 3 , solely determines the electroluminescence color of the organic light‐emitting diodes (OLEDs). Blue OLEDs fabricated using 8 % 1 doped into a 3,5‐bis(N‐carbazolyl)benzene (mCP) host have a quantum efficiency of 4.3 % at 120 Cd m^–2, a brightness of 3900 Cd m^–2 at 12 V, and Commission Internationale de L'Eclairage (CIE) coordinates of (0.11, 0.24). Green and red OLEDs fabricated with 2 and 3 , respectively, also give high quantum efficiencies (～ 6.7 %), with CIE coordinates of (0.31, 0.63) and (0.59, 0.46), respectively. The current‐density–voltage characteristics of devices made using dopants 2 and 3 indicate that hole trapping is enhanced by short Pt–Pt distances (< 3.1 Å). Blue electrophosphorescence is achieved by taking advantage of the binuclear molecular geometry in order to suppress dopant intermolecular interactions. No evidence of low‐energy emission from aggregate states is observed in OLEDs made with 50 % 1 doped into mCP. OLEDs made using 100 % 1 as an emissive layer display red luminescence, which is believed to originate from distorted complexes with compressed Pt–Pt separations located in defect sites within the neat film. White OLEDs are fabricated using 1 and 3 in three different device architectures, either with one or two dopants in dual emissive layers or both dopants in a single emissive layer. All the white OLEDs have high quantum efficiency (～ 5 %) and brightness (～ 600 Cd m^–2 at 10 V).     

Determination of molecular weight and molecular sizes of polymers by high temperature gel permeation chromatography with a static and dynamic laser light scattering detector

Flow-mode static and dynamic laser light scattering (SLS/DLS) studies of polymers, including polystyrene, polyethylene, polypropylene and poly(dimethylsiloxane) (PDMS), in 1,2,4-trichlorobenzene (TCB) at 150 °C were performed on a high temperature gel permeation chromatography (GPC) coupled with a SLS/DLS detector. Both absolute molecular weight (M) and molecular sizes (radius of gyration, R_g and hydrodynamic radius, R_h) of polymers eluting from the GPC columns were obtained simultaneously. The conformation of different polymers in TCB at 150 °C were discussed according to the scaling relationships between R_g, R_h and M and the ρ-ratio (ρ=R_g/R_h). Flow-mode DLS results of PDMS were verified by batch-mode DLS study of the same sample. The presented technique was proved to be a convenient and quick method to study the shape and conformation of polymers in solution at high temperature. However, the flow-mode DLS was only applicable for high molecular weight polymers with a higher refractive index increment such as PDMS.     

高斜效率高功率850nm氧化限制型垂直腔面发射激光器

报道了MOCVD生长的高性能850nm氧化限制型垂直腔面发射激光器.研制出的氧化直径为9μm的激光器25℃时的斜效率和阈值电流分别为0.82mW/mA和2.59mA,激光器在23mA时输出16mW最大光功率.氧化直径为5μm的激光器25℃时的最小阈值电流为570μA,其最大饱和光功率为5.5mW.     

光传送网中的关键光器件

光器件是光传送网的基础单元之一，本主要综述光传送网中的关键光器件：光源与光探测器、光波分复用/解复用器、光放大器、色度色散与偏振模补偿器及光开关等。比较了各种光器件的主要技术方案，特别针对的是已实用化的技术方案。最后讨论了光器件的尺寸小型化、微型化以及多功能集成等发展趋势，介绍了光器件的集成方式如：传统分立光器件的集成，平面光波导集成，以及混合集成等。     

End‐Capping as a Method for Improving Carrier Injection in Electrophosphorescent Light‐Emitting Diodes

The electronic properties, carrier injection, and transport into poly(9,9‐dioctylfluorene) (PFO), PFO end‐capped with hole‐transporting moieties (HTM), PFO–HTM, and PFO end‐capped with electron‐transporting moieties (ETM), PFO–ETM, were investigated. The data demonstrate that charge injection and transport can be tuned by end‐capping with HTM and ETM, without significantly altering the electronic properties of the conjugated backbone. End‐capping with ETM resulted in more closely balanced charge injection and transport. Single‐layer electrophosphorescent light‐emitting diodes (LEDs), fabricated from PFO, PFO–HTM and PFO–ETM as hosts and tris[2,5‐bis‐2′‐(9′,9′‐dihexylfluorene)pyridine‐κ²NC_3′]iridium(III ), Ir(HFP)₃ as the guest, emitted red light with brightnesses of 2040 cd m^–2, 1940 cd m^–2 and 2490 cd m^–2 at 290 mA cm^–2 (16 V) and with luminance efficiencies of 1.4 cd A^–1, 1.4 cd A^–1 and 1.8 cd A^–1 at 4.5 mA cm^–2 for PFO, PFO–HTM, and PFO–ETM, respectively.     

单片LCoS光学引擎中彩色LED照明系统设计

LCoS光学引擎作为整个背投的一个要组成部分，其照明系统显著地影响着LCoS背投的性能。详细分析了影响照明效果的各个因素，并利用ZEMAX软件设计出了单片LCoS光学引擎中基于彩色LED光源的照明系统，该系统能达到较好的亮度和均匀性，满足整个光机系统的成像要求。     

新型微光探测器激光防护材料的研究

系统分析了微光夜视器的结构及其原理，并结合当前器件存在的激光致盲威胁，提出了增强系统安全的新措施。同时，系统地介绍了防激光滤光材料一些重要的性能参数以及滤光材料的组成、制备加工工艺。研究结果表明，新型的防激光材料能够有效地防护800nm，900nm以及10613nm等三个波长的激光，并且可见光透过率大于85％。     

测量光纤放大器小信号增益谱的一种简便方法

提出了一种用小功率宽带光源较精确测量光纤放大器小信号增益谱的方法。数值模拟表明 ,该方法是完全可行的 ,并且实验结果与数值模拟结果一致。该方法具有简便、易操作的特点。     

不同表面预处理对有机电致发光显示器性能的影响

从生产角度研究了基板表面的预处理工艺对OLED性能的影响,分别用UVOzone、氧Plasma以及两者相结合的方式对基板进行表面处理,并按照生产工艺制作器件,从接触角、方阻以及光电特性等测试结果对各种表面处理的样品进行比较。结果表明以上处理都改善了器件性能,不同程度提高了器件的清洁度、亮度和发光效率,其中UVOzone和氧Plasma结合的方式处理效果最为显著,器件在10V时亮度达到79920cd/m2,比其他两种处理方式亮度提高约25%。