紫金山东南矿段成矿期次、阶段浅析

通过对紫金山东南矿段铜钼(金)矿床地质矿化特征分析,指出铜钼矿化带主要赋存于花岗闪长斑岩的内外接触带,处于似斑状花岗闪长斑岩的上部,金矿化带赋存在表生氧化带的英安玢岩、隐爆角砾岩中。经过对矿石的组构特征、矿物生成顺序等特征分析,将矿床的成矿演化过程分为斑岩热液期、高硫化浅成低温热液期、表生氧化期三个主要矿化期次,进一步将斑岩热液期分为黑云母-钾长石化阶段、石英-绢云母化阶段、碳酸盐化阶段三个阶段;高硫化浅成低温热液期分为地开石化阶段、明矾石化阶段、硅化阶段三个阶段。研究结果为进一步研究矿床成因提供了依据。     

Realization of 1 μm thick,crack-free and smooth PMN-PT film in the MPB through PLD: A comprehensive study

This paper presents a comprehensive study on the various hurdles and solutions in the realization of phase pure, pinhole-free and crack-free, 0.65PMN-0.35PT/LSCO/Pt/TiO₂/SiO₂/Si heterostructures using pulsed laser deposition. A few major inquiries were i) effect of excess PbO in the target, ii) modulation of deposition and annealing temperatures for the growth of LSCO buffer layer, iii) thickness of the buffer layer iv) effect of the flow of oxygen in the chamber during and after deposition and v) the annealing conditions; on the phase formation, morphology and leakage response demonstrated by the films. Ferroelectric response parameters viz. P_sat = 47.7 μC/cm², P_r = 20.03 μC/cm², E_C = 62.03 kV/cm and absolute area = 21460 units attest the quality of the grown film.     

Etching characteristics of thin SiON films using a liquefied perfluorocarbon precursor of C6F12O with a low global warming potential

Perfluorocarbon gas is widely used in the semiconductor industry. However, perfluorocarbon has a negative effect on the global environment owing to its high global warming potential (GWP) value. An alternative solution is essential. Therefore, we evaluated the possibility of replacing conventional perfluorocarbon etching gases such as CHF₃ with C₆F₁₂O, which has a low GWP and is in a liquid state at room temperature. In this study, silicon oxynitride (SiON) films were plasma-etched using inductively coupled CF₄ +C₆F₁₂O+O₂ mixed plasmas. Subsequently, the etching characteristics of the film, such as etching rate, etching profile, selectivity over Si, and photoresist, were investigated. A double Langmuir probe was used and optical emission spectroscopy was performed for plasma diagnostics. In addition, a contact angle goniometer and x-ray photoelectron spectroscope were used to confirm the change in the surface properties of the etched SiON film surface. Consequently, the etching characteristics of the C₆F₁₂O mixed plasma exhibited a lower etching rate, higher SiON/Si selectivity, lower plasma damage, and more vertical etched profiles than the conventional CHF₃ mixed plasma. In addition, the C₆F₁₂O gas can be recovered in the liquid state, thereby decreasing global warming. These results confirmed that the C₆F₁₂O precursor can sufficiently replace the conventional etching gas.     

Effect of sodium doping on graded Cu(In1−xGax)Se2 thin films prepared by chemical spray pyrolysis

In the present work we have studied the effect of Na on the properties of graded Cu(In_1−xGa_x)Se₂ (CIGS) layer. Graded CIGS structures were prepared by chemical spray pyrolysis at a substrate temperature of 350 °C on soda lime glass. Sodium chloride is used as a dopant along with metal (Cu/In/Ga) chlorides and n, n-dimethyl selenourea precursors. The addition of Na exhibited better crystallinity with chalcopyrite phase and an improvement in preferential orientation along the (112) plane. Energy dispersive analysis of X-rays (line/point mapping) revealed a graded nature of the film and percentage incorporation of Na (0.86 at%). Raman studies showed that the film without sodium doping consists of mixed phase of chalcopyrite and CuAu ordering. Influence of sodium showed a remarkable decrease in electrical resistivity (0.49–0.087 Ω cm) as well as an increase in carrier concentration (3.0×10¹⁸–2.5×10¹⁹ cm⁻³) compared to the un-doped films. As carrier concentration increased after sodium doping, the band gap shifted from 1.32 eV to 1.20 eV. Activation energies for un-doped and Na doped films from modified Arrhenius plot were calculated to be 0.49 eV and 0.20 eV, respectively. Extremely short carrier lifetimes in the CIGS thin films were measured by a novel, non-destructive, noncontact method (transmission modulated photoconductive decay). Minority carrier lifetimes of graded CIGS layers without and with external Na doping are found to be 3.0 and 5.6 ns, respectively.     

Distributed ledger technology in supply chains: a transaction cost perspective

With the emergence of distributed ledger technology (DLT), numerous practitioners and researchers have proclaimed its beneficial impact on supply chain transactions in the future. However, the vast majority of DLT initiatives are discontinued after a short period. With the full potential of DLT laying far down the road, especially managers in supply chain management (SCM) seek for short-term cost-saving effects of DLT in order to achieve long-term benefits of DLT in the future. However, the extant research has bypassed grounding long-term as well as short-term effects of DLT on supply chain transaction with empirical data. We address this shortcoming, following an abductive research approach and combining empirical data from a multiple case study design with the corresponding literature. Our study reveals that the effects of DLT on supply chain transactions are two-sided. We found six effects of DLT solutions that have a cost-reducing or cost avoidance impact on supply chain transactions. In addition, we found two effects that change the power distribution between buyers and suppliers in transactions and a single effect that reduces the dependency of supply chain transactions on third parties. While cost-reducing and avoidance as well as dependency-reducing effects are positive effects, the change in power distribution might come with disadvantages. With these findings, the paper provides the first empirical evidence of the impact of DLT on supply chain transactions, which will enable managers to improve their assessment of DLT usage in supply chains.     

Secure lightweight password authenticated key exchange for heterogeneous wireless sensor networks

Several three-party password authenticated key exchange (3-PAKE) protocols have recently been proposed for heterogeneous wireless sensor networks (HWSN). These are efficient and designed to address security concerns in ad-hoc sensor network applications for a global Internet of Things framework, where a user may request access to sensitive information collected by resource-constrained sensors in clusters managed by gateway nodes. In this paper we first analyze three recently proposed 3-PAKE protocols and discuss their vulnerabilities. Then, based on Radio Frequency Identification technologies we propose a novel 3-PAKE protocol for HWSN applications, with two extensions for additional security features, that is provably secure, efficient and flexible.     

基于密钥共享的分层混合认证模型

随着信息时代的迅速发展,云计算数据访问安全已经成为了用户最关心的问题。身份认证技术是确保参与者在开放的网络环境中实现安全通信的一种重要手段,如何利用身份认证技术为云环境安全保驾护航,成为学者研究的热点。文中通过公钥基础设施(Public Key Infrastructure,PKI)颁发CA证书以在不同云服务间建立信任,将多个采用身份密码体制(Identity-Based Encryption,IBE)的云联合起来；采用分层身份加密体系,引入共享密钥技术,通过选取成环结构,提出一种PKI-IBE混合认证模型方案,并对方案的安全性进行分析,从理论上证明了云环境下PKI-IBE(Public Key Infrastructure-Identity-Based Encryption)同层成环模型提供服务的可行性。同时文中设计了一种基于该模型的签密技术,通过公私密钥对实现云内认证以及跨云认证。安全性理论证明与性能分析表明,该方案在计算量稍增加的前提下,保证了足够的安全性,更加满足云环境下的用户分属不同云域的认证以及用户安全访问的需求,有效解决了云环境中数据访问的安全问题。     

Enhanced thermal stability of Bi2Te3-based alloys via interface engineering with atomic layer deposition

The ease of Te sublimation from Bi₂Te₃-based alloys significantly deteriorates thermoelectric and mechanical properties via the formation of voids. We propose a novel strategy based on atomic layer deposition (ALD) to improve the thermal stability of Bi₂Te₃-based alloys via the encapsulation of grains with a ZnO layer. Only a few cycles of ZnO ALD over the Bi₂Te_2.7Se_0.3 powders resulted in significant suppression of the generation of pores in Bi₂Te_2.7Se_0.3 extrudates and increased the density even after post-annealing at 500 °C. This is attributed to the suppression of Te sublimation from the extrudates. The ALD coating also enhanced grain refinement in Bi₂Te_2.7Se_0.3 extrudates. Consequently, their mechanical properties were significantly improved by the encapsulation approach. Furthermore, the ALD approach yields a substantial improvement in the figure-of-merit after the post-annealing. Therefore, we believe the proposed approach using ALD will be useful for enhancing the mechanical properties of Bi₂Te₃-based alloys without sacrificing thermoelectric performance.     

中医学视角下城市物质空间的生命要素探析

通过借鉴中医学整体观和生命观的相关理论,从认识城市有机体的生命属性入手,发现并提炼能够产生和传递城市运营所需各种能量的生命要素:廊道和功能体。阐释了其多层级、多性质和多形态的特点,提出了功能体有动力、廊道成系统、敏感点有活力的疏通策略,旨在促进城市各种能量的有机循环,从而维护城市的健康与安全,提高城市生活的效率与质量。     

Accounting for the uncertainties in the estimation of average shear wave velocity using V S– N correlations

Site-specific seismic hazard analysis is crucial for designing earthquake resistance structures, particularly in seismically active regions. Shear wave velocity ( V _S) is a key parameter in such analysis, although the economy and other factors restrict its direct field measurement in many cases. Various V _S–SPT– N correlations are routinely incorporated in seismic hazard analysis to estimate the value of V _S. However, many uncertainties question the reliability of these estimated V _S values. This paper comes up with a statistical approach to take care of such uncertainties involved in V _S calculations. The measured SPT– N values from all the critical boreholes were converted into statistical parameters and passed through various correlations to estimate V _S at different depths. The effect of different soil layers in the boreholes on the Vs estimation was also taken into account. Further, the average shear wave velocity of the top 30 m soil cover ( V _S30) is estimated after accounting for various epistemic and aleatoric uncertainties. The scattering nature of the V _S values estimated using different V _S– N correlations was reduced significantly with the application of the methodology. Study results further clearly demonstrated the potential of the approach to eliminate various uncertainties involved in the estimation of V _S30 using general and soil-specific correlations.