Evaluation codes at singular points of algebraic differential equations

We use the special geometry of singular points of algebraic differential equations on the affine plane over finite fields to study the main features and parameters of error correcting codes giving by evaluating functions at sets of singular points. In particular, one gets new methods to construct codes with designed minimum distance. This work was partially supported by MCyT BFM2001-2251.     

Tuning of electronic states in self-assembled InAs quantum dots using an ion implantation technique

We report the tunability of up to 150 meV of the ground state transition of self-assembled InAs quantum dots (QDs) using Mn ion implantation and subsequent annealing. Because of the exciton localization in the quantum dots, the photoluminescence efficiency (T=12K) of the quantum dot transition remains at 80% of its original value after implantation with a Mn dose of 1×10¹³ cm⁻²ions. Strong luminescence still remains at room temperature. At a high implantation dose (1×10¹⁵ cm⁻²) and rapid thermal annealing (700°C for 60s) about 25% of the QD luminescence intensity is recovered at T=12K.     

Quantum chemical SINDO1 study of vanadium pentoxide

An improved set of parameters for vanadium in the semiempirical quantum chemical SCF MO method SINDO1 is presented. It is shown that both the geometries and heats of formation of a number of vanadium-containing compounds calculated by this method are in good agreement with available experimental data. Model clusters of increasing size are used for the study of geometric and energetic properties of vanadium pentoxide. Both hydrogen atom and proton adsorption on the (010) surface of vanadium pentoxide and a subsequent formation of different oxygen vacancies have been investigated. Based on these computational results the reactivities of V₂O₅-surface oxygen atoms for adsorption are discussed.     

掺富勒烯SiO2气凝胶的制备与发光性质研究

本文利用溶胶－凝胶工艺成功地将富勒烯掺入了ＳｉＯ２气凝胶的纳米孔洞中，在Ａｒ＾＋离子激光激发下，观察到了很强的可见光发射，对该现象作了初步的解释。     

Energy relaxation in GaInAs/AlInAs heterojunctions and GaAs/AlGaAs multiple quantum wells

We have studied electron energy relaxation in GaInAs/AlInAs heterojunctions and GaAs/AlGaAs multiple quantum wells using mobility measurements as a function of electric field and temperature, in the range 3K to 300K. The results in the range 3 to 20K show a power loss rate which is dependent on (T_e − T_l), suggesting that the energy relaxation occurs through acoustic phonon scattering. At electron temperatures greater than 20K, the experimental results are modelled using a standard expression for polar optical phonons. This modelling yields 30meV and 31meV for the polar optical phonon energy in GaAs and InGaAs respectively.     

硼预淀积对自组织生长Ge量子点尺寸分布的影响

研究了以不同B2H6流量预淀积硼对UHV/CVD自组织生长Ge量子点尺寸分布的影响。在适当的生长条件下,得到了尺寸分布很窄的均匀Ge量子点,用AFM对量子点的形貌进行观察,Ge量子点尺寸的涨落小于±3%,量子点的水平尺寸和高度分别为60nm和10nm,密度为8×109cm-2。实验结果表明,通过预淀积硼表面处理,可以得到尺寸分布很窄的量子点,以满足量子点光电器件方面应用的要求。     

Shorts in self-checking circuits

It has been noted by several authors that the classical stuck-at logical fault model might not be an appropriate representation of certain real failures occurring in integrated circuits. Shorts are an important class of such faults. This article gives a detailed analysis of the effects of shorts in self-checking circuits and proposes techniques for dealing with them. More precisely, we show that, unlike other faults such as stuck-at, stuck-on, and stuck-open—which produce only single errors in the place they occur—shorts can produce double errors on the two shorted lines. In particular, feedback shorts can produce double errors on the two shorted lines. The double error is unidirectional for some feedback shorts and non-unidirectional for some others. Furthermore, in some technologies (e.g., CMOS), non-feedback shorts can also produce double non-unidirectional errors. We also show that unlike stuck-at, stuck-on, and stuck-open faults, redundant shorts can destroy the SFS property. Then we propose several techniques for coping with these problems and we illustrate the results by circuit implementation examples.The present study is given for NMOS and CMOS circuits but we show that it is valid for any other technology.     

量子卡诺制冷机制冷率与熵产率的协调优化性能

研究了内可逆谐振子量子卡诺制冷机的整体最优性能。得到了协调优化目标函数Ｅ最大时量子制冷机的制冷系数以及最佳制冷率和熵产率。     

三嗪类化合物的合成及其产酸性能研究

合成了一系列的三嗪类光生酸剂1a-1e，确定了它们的结构，并对1e在乙腈溶剂中365和405nm光下的曝光分解产酸性能进行了初步的定量研究．结果表明，在测定浓度范围内分解量子产率和产酸量子产率基本上都不随浓度的变化而变化，在405nm光下比在365nm光下有更高的分解和产酸量子效率．有关这类化合物的光生酸性能与曝光波长的关系正在进一步研究中．