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11.
Porous alumina films can be found in a wide variety of materials, including filters, thermal insulation components, dielectrics, biomedical and catalyst supports, coatings and adsorbents. Production methods for these films are as equally diverse as their applications. In this work, a hybrid process based upon chemical vapor deposition and gas-to-particle conversion is presented as an alternative technique for producing porous alumina films, with the main advantages of solvent-free, low substrate-temperature operation. In this process, nanoparticles were produced in the vapor phase by reaction of aluminum acetylacetonate in the presence of oxygen. Downstream of this reaction zone, these nanoparticles were collected via thermophoresis onto a cooled substrate, forming a porous film. Some deposited films were subjected to post-processing in the form of annealing in air. Fourier-transform infrared spectra and X-ray energy-dispersive spectroscopy analysis confirmed the production of alumina at processing temperatures above 973 K. X-Ray diffraction revealed that the films were amorphous. Film thickness, ranging from 30 to 250 μm, and the average deposition rate were determined from scanning electron microscopy results. From transmission electron microscopy, the average primary particle size was determined to be approximately 18 nm and the formation of nanoparticle aggregates was evident. Annealing of the films at temperatures ranging from 523 to 1173 K in the presence of air did not have an effect on particle size. The specific surface area of the powder composing the films ranged from 10 to 185 m2 g−1, as determined from nitrogen gas adsorption by the Brunauer–Emmett–Teller method. 相似文献
12.
立方氮化硼(cBN)是一种具有广泛应用价值的Ⅲ-Ⅴ族二元化合物,其优异性质可与金刚石相比拟或胜之.立方氮化硼的制备与性能研究是近二十年来材料领域关注的焦点之一.我们用热丝辅助ECR CVD方法制备了cBN薄膜,并初步探讨了热丝对cBN形成的作用.偏压并不是cBN形成的唯一主要条件,活性粒子也有非常关键的作用. 相似文献
13.
P. Cañizares J. García-Gómez C. Sáez M.A. Rodrigo 《Journal of Applied Electrochemistry》2003,33(10):917-927
The electrochemical oxidation of 4-chlorophenol, 2,4-dichlorophenol and 2,4,6-trichlorophenol aqueous wastes using boron-doped diamond electrodes was studied. This treatment led to complete mineralization of the wastes regardless of the operating conditions. A simple mechanistic model is consistent with the voltammetric and electrolysis results. According to this model, the electrochemical treatment of chlorophenol aqueous wastes involves the anodic and cathodic release of chlorine followed by the formation of non-chlorinated aromatic intermediates. Subsequent cleavage of the aromatic ring gives rise to non-chlorinated carboxylic acids. Chlorine atoms arising from the hydrodehalogenation of the chlorophenols are converted into more oxidized molecules at the anode. These molecules react with unsaturated C4 carboxylic acid to finally yield trichloroacetic acid through a haloform reaction. The non-chlorinated organic acids are ultimately oxidized to carbon dioxide and the trichloroacetic acid into carbon dioxide and volatile organo-chlorinated molecules. Both direct and mediated electrochemical oxidation processes are involved in the electrochemical treatment of chlorophenols. 相似文献
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扫描电子显微研究表明,化学汽相沉积的金刚石薄膜中晶粒大小比较均匀。但随着沉积时间和薄膜厚度的增加,晶粒逐渐变大,且每一层内,存在少量的大金刚石颗粒,讨论了晶粒尺寸变化和大晶粒形成的原因和机制。 相似文献
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Monocrystalline 6H-SiC thin films have been epitaxially grown on off-axis 6H-SiC {0001} substrates in the temperature range
of 1623–1873 K via chemical vapor deposition. The growth rate was a strong function of the growth temperature and the reactant
gas concentration. The activation energies for growth were 64 kJ/mole and 55 kJ/mole for the (0001) Si face and the (0001)
C face, respectively. The concentration of growth pits in the films increased as a function of decreasing deposition temperature,
increasing concentration of reactant gases and increasing off-axis orientation. Beta-SiC islands were also observed in the
epilayers when the (SiH4 + C2H4)/H2 ratio was ≥2.5:3000. 相似文献
19.
Abstract— We have developed a process to fabricate optical components, such as a lens, prism, or diffuser, directly on to a glass substrate. Processes include precision mastering by diamond cutting and multi‐layer photopolymer (2P) molding to realize flat surfaces and the integration of multiple components with an alignment within a few micrometers. 相似文献
20.
S. P. Ashburn M. C. Öztürk J. J. Wortman G. Harris J. Honeycutt D. M. Maher 《Journal of Electronic Materials》1992,21(1):81-86
Titanium and cobalt germanides have been formed on Si (100) substrates using rapid thermal processing. Germanium was deposited
by rapid thermal chemical vapor deposition prior to metal evaporation. Solid phase reactions were then performed using rapid
thermal annealing in either Ar or N2 ambients. Germanide formation has been found to occur in a manner similar to the formation of corresponding silicides. The
sheet resistance was found to be dependent on annealing ambient (Ar or N2) for titanium germanide formation, but not for cobalt germanide formation. The resistivities of titanium and cobalt germanides
were found to be 20 μΩ-cm and 35.3μΩ-cm, corresponding to TiGe2 and Co2Ge, respectively. During solid phase reactions of Ti with Ge, we have found that the Ti6Ge5 phase forms prior to TiGe2. The TiGe2 phase was found to form approximately at 800° C. Cobalt germanide formation was found to occur at relatively low temperatures
(425° C); however, the stability of the material is poor at elevated temperatures. 相似文献