Characterization of temporal response, spectral responsivity and its spatial uniformity in photoconductive diamond detectors

Three photoconductive diamond detectors with highly oriented diamond (HOD) films fabricated by the same process were characterized with respect to temporal response, spectral responsivity and its spatial uniformity over the wavelength range from 190 to 250 nm. Temporal measurements showed a drift in the baseline, suggesting the presence of deep level carrier traps. The responsivity of specimen No. 2 was more than twice those of the other two specimens, but it showed an unpredictable current fluctuation. It was found that the spatial uniformities of all the specimens were too low for radiometric purposes. A prominent peak, thought to be due to photoemission, was found in the responsivity spatial distribution of specimen No. 3 under a negative applied voltage.     

Comparative study of the electrical properties of diamond films grown by microwave plasma assisted and hot-filament chemical vapor deposition

Schottky diodes were built on different polycrystalline diamond films grown by Microwave Plasma and Hot Filament Chemical Vapor Deposition and their electrical properties were studied. The barrier height increased with the diamond film quality and the corresponding ideality factor decreased. Even though the lower-quality HFCVD film displayed poor rectifying properties, it was found to be much less sensitive to variations in the operating conditions (air vs. vacuum). The activation energies of the films depend on morphological parameters, as preferable grain size or orientation. The bulk conduction also depends on the quality of the deposited films, changing from ohmic to trap-free or shallow trap SCLC and SCLC with an exponential distribution of traps. The hypothesis of using the electrical measurements as an indicator for film quality has been discussed.     

无氢类金刚石碳膜的研究进展

介绍了无氢类金刚石碳膜的制备方法 ,它们的机械、光学、电学性能 ,将无氢与含氢的类金刚石碳膜进行了简单比较 ,总结及探讨了它们的应用     

Chemical vapor deposition of aluminum for ulsi applications

Aluminum has been used widely as a conducting material in the fabrication of integrated circuits, and chemical vapor deposition process for Al has been actively investigated for the application in ultra large scale integration. In this review, various precursors, mainly alkyl aluminum and alane compounds, and reaction mechanisms of these precursors in Al CVI) are described. Epitaxial growth and selectivity of the deposition are also discussed. In addition to thermal reactions, plasma and photochemical reactions are also briefly described.     

PDC钻头在胜利油田深井钻井中的应用

胜利油田为提高深井钻井速度，试验应用了PDC钻头，结果表明，深井钻井应用PDC钻头可大幅度提高机械钻速，缩短建井周期，降低钻井成本，经济效益明显。通过大量的现场试验，扩大了PDC钻头在胜利油田的使用范围，并取得很好的效果，初步形成了PDC钻头推广应用区域模式。详细介绍了胜利油田不适用PDC钻头钻进的地层岩性，给出了钻头选型及钻井参数选择原则，并对应用效果进行了分析。     

硼预淀积对自组织生长Ge量子点尺寸分布的影响

研究了以不同B2H6流量预淀积硼对UHV/CVD自组织生长Ge量子点尺寸分布的影响。在适当的生长条件下,得到了尺寸分布很窄的均匀Ge量子点,用AFM对量子点的形貌进行观察,Ge量子点尺寸的涨落小于±3%,量子点的水平尺寸和高度分别为60nm和10nm,密度为8×109cm-2。实验结果表明,通过预淀积硼表面处理,可以得到尺寸分布很窄的量子点,以满足量子点光电器件方面应用的要求。     

C－BN衬底上金刚石的异质外延生长研究

用热灯丝ＣＶＤ方法在Ｃ－ＢＮ单晶衬底上制备出金刚石膜，并且在Ｃ－ＢＮ（１００）面上观察到金刚石的异质外延。     

Film morphology and reaction rate for the CVD of tungsten by the WF6—SiH4 reaction

Journal of Electronic Materials - Low pressure chemical vapor deposition (LPCVD) of tungsten (W) by SiH4 reduction of WF6 on Si(100) surfaces was studied in a single-wafer, cold-wall reactor over a...     

用射频化学气相沉积法制备p型微晶金刚石薄膜

利用射频化学气相沉积法，通过硼的掺杂，在石英玻璃衬底上生长出Ｐ型微晶金刚石薄膜，范德堡法的测试表明，我们得到的薄膜最小电阻率为４×１０－２Ω．ｃｍ，最大空穴迁移率为５０ｃｍ／Ｖ．ｓ；从电阻率与温度关系近似计算出杂质激活能     

High growth rate process in a SiC horizontal CVD reactor using HCl

The results of a new epitaxial process using an industrial 6 × 2″ wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H₂ > 0.05%) and an increase of the growth rate until about 20 μm/h has been measured. Photoluminescence at room temperature and at 50 K was used for defects quantification and distribution. On these wafers grown using HCl high voltage Schottky diodes have been realized. The diodes were analyzed by current-voltage (I-V) characteristics.