New exact solutions of the Tzitzéica-type equations in non-linear optics using the expa function method

One specific class of non-linear evolution equations, known as the Tzitzéica-type equations, has received great attention from a group of researchers involved in non-linear science. In this article, new exact solutions of the Tzitzéica-type equations arising in non-linear optics, including the Tzitzéica, Dodd–Bullough–Mikhailov and Tzitzéica–Dodd–Bullough equations, are obtained using the exp_a function method. The integration technique actually suggests a useful and reliable method to extract new exact solutions of a wide range of non-linear evolution equations.     

河南渑池地区铝土矿工艺矿物学及锂的赋存状态研究

通过河南省渑池地区含锂铝土矿(岩)层工艺矿物学分析,查明铝土矿的物质组成、嵌布特征、伴生锂分布特征和赋存状态,为矿产综合利用提供理论依据。结果显示:该铝土矿Al2O3含量为54.8%,铝硅比值(A/S)为2.6,铝土矿层和粘土岩层中Li2O含量均高于伴生锂边界品位,粘土岩中锂更为富集；矿物组成除一水硬铝石之外,主要是以集合体形态产出的粘土矿物。采用稀酸解析、选矿测试和电子探针分析锂的赋存状态,查明矿石中锂主要是以类质同象置换形式赋存在伊利石和高岭石等粘土矿物中；选矿富锂尾矿中Li2O可富集到0.57%左右,是锂综合回收利用的重点研究对象。      

客车涂装底层材料配套性分析

针对南方客户在使用我司客车一段时间后，车身涂层不同程度出现了起泡的质量问题，进行了现场查看，发现起泡位置在车身左右侧蒙皮，且发生在涂层最底层。初步分析原因是热镀锌板+阴极电泳漆 +原子灰三者之间配套存在问题，通过热镀锌板 +阴极电泳漆 +原子灰三者之间的耐高温 80 ℃配套试验，以及室外曝晒试验，得出镀锌板表面是否钝化、电泳漆膜致密程度和原子灰苯乙烯含量是造成涂层底层起泡的主要原因。为了控制涂层起泡问题，重新修订了我司原子灰、镀锌板、电泳漆的技术标准以及部分工艺文件。     

变形铝合金表面锆基化学转化膜的研究现状

化学转化膜是金属表面主要的处理方法之一，具备良好的附着力和耐蚀性，能为铝合金提供一定的临时防护。传统的六价铬酸盐化学转化膜在日渐严苛的环保压力下已经逐渐淘汰，取而代之的是近几年发展迅猛的三价铬及无铬锆基化学转化膜。铝合金可分为铸造铝合金和变形铝合金，按照所含主要合金元素和热处理状态可分为若干个系列和型号。本文选取几种典型的变形铝合金，综述了不同铝合金微观组织对转化膜成膜过程的影响，化学转化液添加剂、预处理和后处理工艺对转化膜性能的调控及作用机理，以及几种典型商业钝化剂在变形铝合金表面的应用。总结了目前变形铝合金表面锆基化学转化膜仍面临的问题和发展趋势，未来化学转化膜需在满足新型铝合金发展要求的基础上，通过不同有机、无机添加剂以及外场作用对转化膜的成膜均一性、完整性进行调控，以提高转化膜的综合性能。     

紫金山东南矿段成矿期次、阶段浅析

通过对紫金山东南矿段铜钼(金)矿床地质矿化特征分析,指出铜钼矿化带主要赋存于花岗闪长斑岩的内外接触带,处于似斑状花岗闪长斑岩的上部,金矿化带赋存在表生氧化带的英安玢岩、隐爆角砾岩中。经过对矿石的组构特征、矿物生成顺序等特征分析,将矿床的成矿演化过程分为斑岩热液期、高硫化浅成低温热液期、表生氧化期三个主要矿化期次,进一步将斑岩热液期分为黑云母-钾长石化阶段、石英-绢云母化阶段、碳酸盐化阶段三个阶段;高硫化浅成低温热液期分为地开石化阶段、明矾石化阶段、硅化阶段三个阶段。研究结果为进一步研究矿床成因提供了依据。     

转载溜槽衬板磨损预测的DEM仿真方法

针对EDEM自动划分网格较稀疏问题,采用Hypermesh划分仿真模型网格,利用Herz-Mindlin接触理论的Archard磨损模型对转载溜槽磨损问题进行仿真,在网格单元上提取出漏斗和溜管衬板的接触能量和磨损量,分析了磨损量与接触能量的关系。假设转载溜槽衬板磨损深度为物料与溜槽衬板的使用时间为线性函数,根据现场衬板磨损量的测量值,将衬板的磨损系数关系的看作隐式的单变量方程,应用EDEM软件的仿真结果求解出磨损系数的标定值。分析了漏斗和溜管的磨损机理。该方法可用于转载溜槽的磨损预测。     

Reversible data hiding based on RSBEMD coding and adaptive multi-segment left and right histogram shifting

By leveraging the secret data coding using the remainder storage based exploiting modification direction (RSBEMD), and the pixel change operation recording based on multi-segment left and right histogram shifting, a novel reversible data hiding (RHD) scheme is proposed in this paper. The secret data are first encoded by some specific pixel change operations to the pixels in groups. After that, multi-segment left and right histogram shifting based on threshold manipulation is implemented for recording the pixel change operations. Furthermore, a multiple embedding policy based on chess board prediction (CBP) and threshold manipulation is put forward, and the threshold can be adjusted to achieve adaptive data hiding. Experimental results and analysis show that it is reversible and can achieve good performance in capacity and imperceptibility compared with the existing methods.     

Etching characteristics of thin SiON films using a liquefied perfluorocarbon precursor of C6F12O with a low global warming potential

Perfluorocarbon gas is widely used in the semiconductor industry. However, perfluorocarbon has a negative effect on the global environment owing to its high global warming potential (GWP) value. An alternative solution is essential. Therefore, we evaluated the possibility of replacing conventional perfluorocarbon etching gases such as CHF₃ with C₆F₁₂O, which has a low GWP and is in a liquid state at room temperature. In this study, silicon oxynitride (SiON) films were plasma-etched using inductively coupled CF₄ +C₆F₁₂O+O₂ mixed plasmas. Subsequently, the etching characteristics of the film, such as etching rate, etching profile, selectivity over Si, and photoresist, were investigated. A double Langmuir probe was used and optical emission spectroscopy was performed for plasma diagnostics. In addition, a contact angle goniometer and x-ray photoelectron spectroscope were used to confirm the change in the surface properties of the etched SiON film surface. Consequently, the etching characteristics of the C₆F₁₂O mixed plasma exhibited a lower etching rate, higher SiON/Si selectivity, lower plasma damage, and more vertical etched profiles than the conventional CHF₃ mixed plasma. In addition, the C₆F₁₂O gas can be recovered in the liquid state, thereby decreasing global warming. These results confirmed that the C₆F₁₂O precursor can sufficiently replace the conventional etching gas.