Ag_2Se/Se/SiO_2纳米复合物的制备及其光电性质

通过两步法成功合成了Ag2Se/Se/SiO2纳米复合物。首先采用Na2SiO3和Na2SeSO3为反应物,制得纳米Se/SiO2前驱物,然后将前驱物与AgNO3反应制得产物。讨论了产物的形成机理,利用TEM、XRD、UV-vis、FT-IR、LRS、PL等方法对产物进行了表征,并对产物的电化学和电致发光特性进行了研究。结果表明,产物有一定的电化学活性,并有较好的电致发光行为。     

Ag担载介孔Bi2WO6的制备及其太阳光催化性能

采用硬模板法及液相沉淀法制备了介孔Bi2WO6(m-Bi2WO6)光催化剂,通过光还原沉积贵金属的方法制备了银担载的m-Bi2WO6复合纳米粒子(Ag/m-Bi2WO6),并利用氮气吸附脱附、XRD、XPS、DRS等测试技术对样品进行了表征。以RhB染料为目标降解物,考察了样品的光催化活性。结果表明,介孔结构能够提高Bi2WO6光催化剂的光催化性能;担载金属银,使得m-Bi2WO6催化剂的光催化性能得到了提高。     

棉针织物的抗菌整理研究

针对目前市面上纺织品抗菌能力低的缺点,应用纳米TiO2和纳米Ag复合作为整理剂,采用不同用量和不同配比,对棉针织物进行抑菌整理,并采用抑菌环和振荡烧瓶法对整理后的棉织物进行抗菌性能的测试.通过缩小范围的方法,最终确定出最佳工艺条件为:复合整理剂的用量为0.5%,复合整理剂两种成分TiO2与Ag的质量比为1∶3.     

掺银对TIBaCaCuO系超导体性能的影响

本文研究了掺入适量的银对TlBaCaCuO系超导体超导性能的影响。实验结果表明,当银的掺入量不超过0.3mol时,有利于2223相的形成;在掺入0.3mol银的同时,适当提高组成中Tl或Cu的含量,可以降低烧结温度,并能获得T_(o0)=122K,T_(onset)=136K的TlBaCaCuO系超导体。     

结核分枝杆菌融合抗原Ag85B-ESAT6真核表达载体的构建及鉴定

以结核分枝杆菌H37Rv株的基因组作为模板,将Ag85B和ESAT6编码基因进行PCR扩增,然后采用基因剪接重叠扩增PCR法(gene SOEing)将其通过疏水甘氨酸接头(GGIGIAPG)连接融合,定向克隆至质粒Pvax1中,构建结核分枝杆菌Ag85B-ESAT6融合抗原的真核表达质粒Pvax1/AE.经单双限制性内切酶图谱、PCR产物及DNA测序分析等多种方法鉴定,证实Pvax1/AE真核表达质粒构建成功.为进一步研究其结核核酸疫苗原型的免疫保护效果奠定了基础.     

Sensitivity enhancement for H2 gas detection using a SnO2–Ag2O–PdOx nanocrystalline system

Thick film H₂ sensors were fabricated using SnO₂ loaded with Ag₂O and PdO_x. The composition that gave highest sensitivity for H₂ was in the wt.% ratio of SnO₂:Ag₂O:PdO_x as 93:5:2. The nano-crystalline powders of SnO₂–Ag₂O–PdO_x composites synthesized by sol–gel method were screen printed on alumina substrates. Fabricated sensors were tested against gases like H₂, CH₄, C₃H₈, C₂H₅OH and SO₂. The composite material was found sensitive against H₂ at the working temperature 125 °C, with minor interference of other gases. H₂ gas as low as 100 ppm can be detected by the present fabricated sensors. It was found that the sensors based on SnO₂–Ag₂O–PdO_x nanocrystalline system exhibited high performance, high selectivity and very short response time to H₂ at ppm level. These characteristics make the sensor to be a promising candidate for detecting low concentrations of H₂.     

Characterisation of electroplated Sn/Ag solder bumps

Environmental concerns as well as legal constraints have been pushing research on flip chip technology towards the development of lead-free solders and also to new deposition techniques [Z.S. Karim, R. Schetty, Lead-free bump interconnections for flip-chip applications, in: IEEE/CPMT 1nternational Electronics Manufacturing Technology Symposium, 2000, pp. 274-278, P. Wölflick, K. Feldmann, Lead-free low-cost flip chip process chain: layout, process, reliability, in: IEEE International Electronics Manufacturing Technology (IEMT) Symposium, 2002, pp. 27-34, M. McCormack, S. Jin, The design and properties of new, pb-free solder alloys, in: IEEE/CPMT International Electronics Manufacturing Technology Symposium, 1994, pp. 7-14, T. Laine-Ylijoki, H. Steen, A. Forsten, Development and validation of a lead-free alloy for solder paste applications. IEEE Transactions on Components, Packaging, and Manufacturing technology, 20(3) (1997) 194-198, D. Frear, J. Jang, J. Lin, C. Zhang, Pb-free solders for flip-chip interconnects, JOM, 53(6) (2001) 28-32].Binary and ternary tin alloys are promising candidates to substitute lead-content components. In this paper, we describe an electroplating technique for high density FlipChip packaging [M. Bigas, E. Cabruja, Electrodeposited Sn/Ag for flip chip connection, CDE (2003)]. An analysis using Auger Electron Spectroscopy (AES) together with additional Energy Dispersive Xray analysis (EDS) tests and Scanning Electron Microscope (SEM) analysis have been performed to optimize the reflow process of the electrodeposited bumps.     

微量Ag对Al-Cu-Mg合金显微组织与力学性能的影响

研究了Ag元素对Al-8Cu-0．5Mg合金显微组织、室温及高温力学性能的影响。结果表明：均匀分布在铝基体{001}面和{111}面上共存的θ′和Ω（成分为Al2Cu）沉淀相能对含Ag合金起强化作用；而不含Ag的合金只有θ′一种沉淀相。含Ag合金中小尺寸以及近间距的θ′和Ω沉淀相提高了室温及高温下合金的屈服强度和拉伸强度。然而，与不含Ag的合金相比，由于这种小尺寸及近间距的θ′和Ω沉淀相在变形过程中具有与基体的内在不相容性，含银合金的伸长率降低。     

Structures and properties of [CoPt/Ag]_n multilayer films

In recent years there has been considerable interest in atomically ordered L10-CoPtfilms as potential materials for ultrahigh density magnetic recording (UDMR) media[1].The L10 phase CoPt alloy has high anisotropy constant of 107—108 erg/cm3, which is ofcrucial importance for UDMR media with a small grain size below 10 nm, because highmagnetocrystalline anisotropy is needed to create a barrier to thermally activatedswitching of the magnetization[2, . The as-deposited CoPt film with equi…