二氧化锡溅射工艺研究

SnO2 是最早使用也是目前使用最广泛的一种气敏材料 ,使用该材料设计制作的气敏传感器具有许多优点。在简要介绍溅射镀膜的成膜过程和特点的基础上 ,着重介绍了SnO2 膜的制备流程 ,分析了功率和温度变化对成膜质量的影响     

Investigation into polishing process of CVD diamond films

A new technique used for polishing chemical vapor deposition (CVD) diamond films has been investigated, by which rough polishing of the CVD diamond films can be achieved efficiently. A CVD diamond film is coated with a thin layer of electrically conductive material in advance, and then electro-discharge machining (EDM) is used to machine the coated surface. As a result, peaks on the surface of the diamond film are removed rapidly. During machining, graphitization of diamond enables the EDM process to continue. The single pulse discharge shows that the material of the coated layer evidently affects removal behavior of the CVD diamond films. Compared with the machining of ordinary metal materials, the process of EDM CVD diamond films possesses a quite different characteristic. The removal mechanism of the CVD diamond films is discussed.     

ZnLiFeO_3高温热敏厚膜材料的研究

ＺｎＬｉＦｅＯ３（ＺＬＦ）高温ＮＴＣ热敏厚膜材料，是以尖晶石结构的ＺｎＬｉＦｅＯ３导电陶瓷作厚膜浆料的导电相，以Ａｌ２Ｏ３瓷为基体，用厚膜工艺制成的。实验表明，在氮气中烧结的ＺＬＦ厚膜材料，室温方阻１０３Ω／□级，Ｂ值约１０００Ｋ。在高温５００～７００℃范围内，方阻降为１０２Ω／□级，Ｂ值仍小于１０００Ｋ。是一种很有前途的高温热敏材料。     

工艺参数对纳米颗粒Cu/SiO_2复合薄膜结构和光谱特性的影响

用离子束溅射法制备了具有反常光吸收特性的纳米颗粒CU／SiO2复合薄膜。获得了在离子来参数一定时，基片温度、膜料的沉积时间和镀膜后的保温时间等工艺参数对这种薄膜结构和光学特性的影响规律，并对纳米颗粒Cu／SiO2复合薄膜的反常光吸收特性作了计算和解释。     

L－B膜修饰电极循环伏安行为模拟──（Ⅰ）电荷转移速度常数对循环伏安性能的影响

本文用计算机数字模拟方法研究了电活性分子多层Ｚ型Ｌ－Ｂ膜修饰电极的循环伏安行为。计算了电极与修饰Ｌ－Ｂ膜分子第一层之间的电荷转移速度常数Ｋ_ｏ，Ｌ－Ｂ膜分子层间的电荷转移速度常数ｋ_ｉ；对峰电位差△Ｅ_ｐ及阳极峰面积Ｑ的影响，以及在不同条件下各层分子的氧化态分数随扫描时间的变化。为研究和设计电活性分子修饰电极的实际体系提供了大量数据和信息。     

微型真空力敏器件的研究

本文首次用电荷模拟法计算了真空微电子力敏传感器的场致发射阴极与阳极间的电场分布,同时计算了<100>晶向的方形硅薄膜受压形变与压力的关系,进而得出了这种传感器的电流-压力曲线.还做了水槽模拟电场分布的实验,理论与实验符合的很好.     

Mixed Mode VLSI Implementation of a Neural Associative Memory

A mixed mode digital/analog special purpose VLSI hardware implementation of an associative memory with neural architecture is presented. The memory concept is based on a matrix architecture with binary storage elements holding the connection weights. To enhance the processing speed analog circuit techniques are applied to implement the algorithm for the association. To keep the memory density as high as possible two design strategies are considered. First, the number of transistors per storage element is kept to a minimum. In this paper a circuit technique that uses a single 6-transistor cell for weight storage and analog signal processing is proposed. Second, the device precision has been chosen to a moderate level to save area as much as possible. Since device mismatch limits the performance of analog circuits, the impact of device precision on the circuit performance is explicitly discussed. It is shown that the device precision limits the number of rows activated in parallel. Since the input vector as well as the output vector are considered to be sparsely coded it is concluded, that even for large matrices the proposed circuit technique is appropriate and ultra large scale integration with a large number of connection weights is feasible.     

水溶性防氧化剂在SMT用印制板上的应用

水溶性的防氧化剂是一种有机可焊性保护剂。其方法是在印制板完全阻焊、字符层的印刷，并经电检之后，通过表面浸渍在裸铜的贴片位或通孔内形成一种耐热性的有机可焊性膜层。这种有机、可焊、耐热的膜层，膜厚可达0.3-0.5mm，其分解的温度可达约300℃，传统的印制板的热风整平法亦无法满足QFP愈来愈密集的需求，同时也无法满足SMD表面平整度的要求，更无法适应PCB薄型化生产。烷基苯并咪唑的OSP法能弥补这项缺陷，因而在PCB业乃至SMT产业中得到了广泛的应用。     

预处理工艺对硬质合金与金刚石膜间粘结力的影响

在两种经不同预处理的硬质合金YG8基底上，采用微波等离子体化学气相沉积法，在微波功率2kW，压强4.0kPa和6.5kPa，CH4和H2流量分别为1.6cm/s和100.0cm/s的条件下生长金刚石薄膜。利用X射线衍射检测了金刚石薄膜是否存在，用拉曼光谱分析了薄膜的质量，用金相显微镜观察了薄膜的洛氏硬度压痕，标定并比较了不同预处理工艺膜与基底的结合力。实验结果表明，不同的预处理方法对于粘结力的影响不大，最主要的因素是钴含量的多少。     

浅谈酶在非接触印刷废纸脱墨中的应用

简要地介绍了纤维素酶、半纤维素酶和淀粉酶在非接触印刷废纸脱墨中的研究及其应用