Influences of Ga concentration on performances of CuInGaSe2 cells fabricated by sputtering-based method with ceramic quaternary target

Copper Indium Gallium Selenide (Cu(In,Ga)Se₂, CIGSe) absorbers with different Ga contents were prepared by sputtering CIGSe ceramic targets and post-annealing. CIGSe solar cell devices were fabricated with other functional layers. The device performances and absorber properties were investigated. Increasing Ga content led to an increase in V_OC and a decrease in J_SC. Ga was supposed to diffuse towards back contact during the annealing process. The best performance was obtained as the ratio of Ga/(In + Ga) reaches 0.32 with the efficiency of 13.8% and a V_OC of 537 mV.     

Modelling of black carbon statistical distribution and return periods of extreme concentrations

Eight datasets of 1-h black carbon (BC) concentrations measured in Warsaw agglomeration (Poland), at urban background and sub-urban sites, and in Racibórz, a small town in Upper Silesia district (regional background site) were analyzed to evaluate BC levels, daily profiles and statistical distributions of concentrations in Central-Eastern European region. The observed mean levels ranged from 1483 ng m⁻³ in suburban site during summer to 3358 ng m⁻³ in regional background site in winter. Observed diurnal patterns were bimodal in the locations dominated by traffic emissions, but unimodal, with elevated evening peak in individually heated residential area. Three theoretical frequency distributions were applied to fit analyzed datasets separately. The lognormal distribution was the most appropriate to represent the middle-range values, while the high concentrations were satisfactorily predicted by the type I two-parameter exponential distribution which was used to estimate the return periods of extreme concentrations for winter months.     

开关磁阻直线电机的设计及其推力优化

设计了一种开关磁阻直线电机,使用JMAG软件对其进行了仿真和优化。进行了推力公式的推导,研究了导通顺序和初始位置对电机推力的影响,并分析了三种典型情况的磁力线分布。对电机的定子和动子的齿部和轭部高度、宽度及铁耗进行仿真优化,得出了最优参数。将有取向硅钢应用于该电机,研究了推力与轧制角的关系,并与使用普通硅钢的开关磁阻直线电机进行了对比,推力有一定提升。提出在动子齿部开切向槽的方案,结果表明,开切向槽对推力的影响较小,并能显著减小推力波动。     

Large increase of Curie temperature in (110)-oriented La0.7Sr0.3MnO3 films

From the perspectives of scientific researches and practical applications, it is desirable to explore high operating temperature ferromagnetic films. The effect of biaxial strain on magnetic properties of (110)-oriented La_0.7Sr_0.3MnO₃ films was studied. High quality La_0.7Sr_0.3MnO₃ films were grown on (110)-oriented perovskite single crystal substrates using pulsed laser deposition, varying substrate-induced misfit strains from ??2.27–0.75%. A remarkable enhancement of Curie temperature has been achieved for (110)-oriented La_0.7Sr_0.3MnO₃ films clamped with small misfit strains (i.e., grown on LAST (110)). The enhanced Curie temperature of (110)-oriented La_0.7Sr_0.3MnO₃ films could be attributed to the misfit strain between the films and the underlying substrates and may have technological implication for applications at high temperature environments.     

An efficient manufacturing method for I-shaped cross-sectional CFRP beam with arbitrary arrangement of carbon fiber using electro-activated resin molding

Abstract

The I-shaped cross-sectional beam of CFRP (CFRP I-beam) is usually manufactured by the continuous protrusion method. Carbon fibers can only be arranged in the longitudinal direction. The CFRP I-beam with arbitrary arrangement of carbon fiber was manufactured with applying the electro-activated deposition molding method. The carbon fiber fabric was immersed in the deposition solution and energized, epoxy resin precipitated around carbon fiber and impregnated. The resin-impregnated fabric was installed to the mold, and the CFRP I-beam was fabricated. The CFRP I-beam was subjected to three-point bending tests, and the relationship between load-deflection was simulated by finite-element analysis.     

Solar light-driven reduction of crystal violet by a composite of g-C3N4, β-Ag2Se, γ-Fe2O3 and graphite

Abstract

In this work, a new g-C₃N₄-based Z-scheme with γ-Fe₂O₃ and β-Ag₂Se both n-type semiconductors, and graphite to favor electron exchange is presented. The composite material was studied by XRD, FTIR, UV-Vis, TEM, XPS, TGA, DSC and TOF-SIMS, and the ability of this photocatalytic system to act as a photo-reductant was assessed using crystal violet (CV⁺) dye. Solar light driven photo-reduction of CV⁺ in the presence of tri-sodium citrate evidenced a synergistic enhancement of the activity of the composite toward reduction, with ～20 times higher conversion rates per unit of surface area than those of g-C₃N₄. Photo-oxidation experiments under Xe lamp irradiation in the presence of H₂O₂ also showed that the AgFeCN composite featured a higher activity (～8×) than g-C₃N₄. This Z-scheme may deserve further study as a photo-reductant to obtain hydrogen or hydrogenated compounds. Moreover, the use of CV⁺ may represent a facile procedure that can aid in the selection of new photocatalysts to be used in hydrogen production.     

Formation of ST12 phase Ge nanoparticles in ZnO thin films

In this work, we focus on the Ge nanoparticles (Ge-np) embedded ZnO multilayered thin films. Effects of reactive and nonreactive growth of ZnO layers on the rapid thermal annealing (RTA) induced formation of Ge-np have been specifically investigated. The samples were deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively on Si substrates. As-prepared thin film samples have been exposed to an ex-situ RTA at 600 °C for 60 s under forming gas atmosphere. Structural characterizations have been performed by X-ray Diffraction (XRD), Raman scattering, Secondary Ion Mass Spectroscopy (SIMS), and Scanning Electron Microscopy (SEM) techniques. It has been realized that reactive or nonreactive growth of ZnO layers significantly influences the morphology of the ZnO: Ge samples, most prominently the crystal structure of Ge-np. XRD and Raman analysis have revealed that while reactive growth results in a mixture of diamond cubic (DC) and simple tetragonal (ST12) Ge-np, nonreactive growth leads to the formation of only DC Ge-np upon RTA process. Formation of ST12 Ge-np has been discussed based on structural differences due to reactive and nonreactive growth of ZnO embedding layer.