InxGa1−xAs ohmic contacts to n-type GaAs with a tungsten nitride barrier

Significant reduction of the contact resistance of In_0.7Ga_0.3As/Ni/W contacts (which were previously developed by sputtering in our laboratory) was achieved by depositing a W₂N barrier layer between the Ni layer and W layer. The In_0.7Ga_0.3 As/Ni/W₂N/W contact prepared by the radio-frequency sputtering technique showed the lowest contact resistance of 0.2 Ωmm after annealing at 550°C for 10 s. This contact also provided a smooth surface, good reproducibility, and excellent thermal stability at 400°C. The polycrystalline W₂N layer was found to suppress the In diffusion to the contact surface, leading to improvement of the surface morphology and an increase in the total area of the In_xGa−As between metal and the GaAs substrate. These improvements are believed to reduce the contact resistance.     

Reaction between the tetragonal tungsten bronze niobate K2Sr4Nb10O30 and the perovskite Pb(Mg1/3Nb2/3)O3

The search for dielectric materials with a high dielectric constant and ′_r = ƒ(T) curves with a flat profile fitting the X7R specification is still ongoing. Promising results were obtained by mixing compounds with closely related structures, such as the tetragonal tungsten bronze (TTB) niobate K₂Sr₄Nb₁₀O₃₀ and the perovskite Pb(Mg_1/3Nb_2/3)O₃ (PMN). The present study, based on three methods of synthesis, explores the origin of the spreading out of the dielectric curves ′_r = ƒ(T). For the composition 10x K_0.2Sr_0.4NbO₃ (KSN) + (1 − x)Pb(Mg_1/3Nb_2/3)O₃ (PMN) with x = 0.3–0.6, the three synthesis methods provided similar characteristics and for the highest perovskite ratio (x = 0.3), the ′_r = ƒ(T) curve exhibits a flat profile. When lithium is used as a sintering agent, ′_r = ƒ(T) curves present a linear dependency with the temperature. These materials are also characterized by a structural and a microstructural inhomogeneity. Two phases TTB and perovskite type, different from KSN and PMN, are present after calcination and sintering, but not evenly distributed. The PbO loss during sintering also contributes to the evolution of the properties of the material.     

利用钨极氩弧焊技术修复1#汽轮机转子的实践

本文主要介绍了我厂利用钨极氩弧焊将1#发电机组汽轮机转子修复的工艺过程.     

我国钨业“四矿”问题及其对策思考

简要回顾了我国钨矿业悠久的历史、资源的优势、技术的进步和卓越的贡献 ;20世纪80年代中期以后 ,逐步陷入困境 ,举步维艰的主要表现 ;以及在解决“四矿”(矿业、矿山、矿工、矿城)问题中的艰苦经历。指出应在“四矿”问题讨论中做更多、更深的对策思考 ,并对钨业的“四矿”问题加以重点研究。     

利用含钨废催化剂生产钨酸的工业实践

笔者较为详细地阐述了利用含钨废催化剂生产钨酸的工艺流程、各工序反应原理及其操作工艺实践、产品质量情况、原辅材料单耗等。实践证明 ,该工艺实用性强 ,具有显著的经济效益、社会和环保效益。     

利用含钨废催化剂生产钨酸工艺实践

较为详细地阐述了利用含钨废催化剂生产钨酸的工艺流程、各工序反应原理及其操作实践、产品质量情况、原辅材料单耗等。实践证明 ,本工艺具有显著的经济效益和社会效益、环保效益     

我国钨冶炼技术的新进展

综述了近年来我国钨冶炼在开发处理多种资源的工艺技术，钨钼分离技术，从低品位钨矿物原料和含钨废料中生产高纯APT，钨冶炼技术装备和自动化水平，膜分离技术在开发无污染钨冶炼工艺的应用，超细钨粉等方面的最新进展和成果。在此基础上，展望了我国今后钨冶炼发展的方向。     

制备W－Ni－Cu钨合金的热解还原法工艺探讨

用硝酸镍、氯化铜与乙酸镍、乙酸铜的溶液分别与钨粉混合，干燥，经热解还原法制备的Ｗ－Ｎｉ－Ｃｕ钨合金，其技术指标均可满足使用要求。文章分析、讨论了这两种工艺特性及存在的问题。采用硝酸镍、氯化铜代镍、铜所制备的钨合金，在热解还原过程中产生大量有毒气体、严重的污染环境。乙酸镍、乙酸铜代镍和铜制备的钨合金，在热解还原过程中较好地解决了对环境及产品的污染问题，并保持了热解还原工艺的特性。     

钨青铜(TB)型晶体材料的分子设计及其新进展

在TB型晶体结构讨论的基础上，着重阐述分子设计的方法在TB型晶体材料研究中的具体运用，以及近年来所取得的新进展；指出了国内在TB型晶体材料研究方面与国外存在的差距和今后的努力方向。     

Testing of electrochromic materials using symmetrical devices

“Symmetric materials” devices, where both electrodes are made of the same electrochromic materials, allow the in situ study of side reactions. Each transferred charge that is not used for the expected electrochromic reaction will cause a colour change in the whole symmetric device. Two electrochromic materials, WO₃ and IrO₂, are successively used to show how to obtain information about side reactions such as faradaic efficiency, reversibility and potential limits from the symmetric experiment. This in situ approach with a polymer electrolyte shows significant differences compared to results obtained with studies in aqueous electrolytes.