Self-aligned silicon-on-insulator nano flash memory device

This paper reports on the fabrication of a silicon-on-insulator nano flash memory device based on the differential oxidation rate of silicon resulting from gradients in the arsenic doping concentration. The key processes involved are the formation of the desired arsenic doping profile, electron beam lithography and wet oxidation. The resulting device is a triangular-channel MOSFET with a nanocrystal floating gate embedded in the gate oxide. The length, width and height of the nanocrystal are 10, 10 and 20 nm, respectively. As long as the control gate voltage does not exceed ±2V, the device behaves like a thin and narrow P-channel MOSFET. When a voltage of −5 or +5 V is applied to the control gate at room temperature, holes are injected into the floating gate or removed from it, respectively. This effect induces a persistent shift of the threshold voltage of the device, which acts as a miniature EEPROM.     

EEPROM芯片X25043及其在8098系统中的应用

介绍美国Xiocr公司的具有可编程看门狗及电压监控功能的EEPROM芯片X25043的工作原理、性能特点及编程要点，以及X25043在单片机8098系统中的应用。     

一种新型智能电表的研制

介绍了一种新型智能电表的应用系统，并用该智能电表中的手持单元部分和费率装置部分的实际电路和设计方法进行了说明。给出了具体的电路原理图及相关的主要软件设计程序。     

基于NXP-LPC2378的飞行模拟训练器正前方控制板设计

采用NXP公司的LPC2378微控制器对正前方控制板进行设计。介绍其硬、软件设计,并给出系统框图,通信采用全双工RS-422通信,控制程序采用C语言编程完成;显示采用4个8位LED字符显示器。结果表明,该设计能实现信息采集处理功能,降低系统功耗和研制成本,能满足操作人员的需要,具有亮度可调和可视角大的特点。     

Effects of indoor color on mood and cognitive performance

In this study, the impact of indoor color use, gender and age on mood and cognitive performance was examined. It was hypothesized that indoor color for decoration in stores is an effective source that may convey emotional meanings differentiated by gender, age, or both. In order to study this, a two-stage work was carried out in a café/restaurant, in which interior yellow walls were changed to violet. In both stages, furniture and decorations remained the same. Each appearance (yellow and violet) was tested by using visual attributes through the use of bipolar scales. Results from approximately 250 participants for each stage showed that violet interiors were more positively perceived when compared to yellow. Compared to females, male users evaluated the space more positively. In addition, young customers had a more positive tendency than older customers towards the perception of atmospheric attributes, including color of store interiors.     

A Field Guide to Radical Post-Modernism

Sean Griffiths, Charles Holland and Sam Jacob of FAT curate and classify the work of a diverse and international grouping of Radical Post-Modern architects. They range from the recently defunct Foreign Office Architects (FOA), known for their proclivity for pattern and ornament, to Tokyo-based Atelier Bow-Wow who are rigorous in their pursuit of the ordinary. They run the gamut of the highly figurative, as exemplified by Melbourne-based practice ARM, to the expressive austerity of Swiss architect Valerio Olgiati. Copyright © 2011 John Wiley & Sons, Ltd.     

64kB电可擦除只读存储器研究与设计

文章通过对电可擦除可编程只读存储器工作原理的研究,掌握了该存储器的设计技术和工艺加工技术,特别是关键模块（如软硬件数据保护、页写、全片擦除等）的设计技术,在此基础上研制了一种存储容量为64kB的EEPROM。64kB EEPROM的特殊结构保证了电可擦除可编程存储器的高性能和可制造性;器件利用内部错误诊断来增强数据的耐久性,同时改进了数据的保存特性;同时可选择的软件数据保护机制用于预防误写入。有关方面研究工作将对后续同类产品的研制起到积极的作用。     

EEPROM单元抗辐射版图设计技术

随着EEPROM存储器件在太空和军事领域的广泛应用,国际上对EEPROM抗辐射性能的研究越来越多。为了达到提高存储器件抗辐射性能的目的,文章从版图设计的角度出发,首先分析了辐射对器件造成的影响,接下来分别介绍了基于FLOTOX和SONOS工艺的EEPROM器件特性,同时指出了在版图设计时需要注意的电压耦合比的问题。在设计中,利用管内隔离和管间隔离的方法,使得管内源/漏端和相邻两管源/漏端之间没有场氧介入,或是将场氧隔开,不让场区下形成漏电通道。设计出的EEPROM版图,不但满足了目前的工作需要,同时为以后抗辐射版图设计提供了有用的参考。     

一种适用于射频电子标签的超低功耗嵌入式EEPROM

采用Chartered 0.35μm EEPROM工艺设计并实现了一个适用于无源射频电子标签的256位超低功耗EEPROM存储器.芯片实现了块编程和擦写功能,并通过优化敏感放大器和控制逻辑的结构,实现了读存储器时间和功耗的最优化.最后给出了芯片在编程/擦写/读操作情况下的功耗测试结果.在电源电压为1.8V,数据率为640kHz时,EEPROM编程/擦写的平均功耗约为68μA,读操作平均功耗约为0.6μA.     

一种40ns 16kb EEPROM的设计与实现

基于0.35μmCMOS工艺,设计并实现了一个3.3V16kbEEPROM存储器。该电路采用2k×8的并行结构体系。通过优化设计灵敏放大器、位线译码和字线充放电等电路,加快了读取速度,典型值仅40ns;通过编程模式和编程电路的设计,提高了编程速度,页编程时间为2ms,等效于每字节62ms。重点研究了片上高压产生电路,提出了一种在不增加工艺难度和设计复杂度的情况下提供良好性能的电荷泵电路。电路的单元面积为11.27μm2,芯片尺寸约1.5mm2。