Recent developments in precision radial grating manufacture

It was approximately two years ago that the Cranfield Unit for Precision Engineering (CUPE) established its own in-house facility for the manufacture of master radial gratings¹. This has been strengthened following the recent purchase of master radial and linear grating generating equipment from the National Engineering Laboratory, East Kilbride, and the transfer of technical knowledge to make the system operable. As a result CUPE is now is possession of two operable grating manufacturing facilities - a resist system (CUPE) and photographic emulsion system (ex-NEL).     

Shorter-wavelength lithography utilizing MRS-type negative resists

New negative photoresists, called MRS-type resists, are successfully applied to deep-UV 1:1 projection printing and 365 nm 10:1 reduction projection printing. The MRS-type resists are characterized by intense absorption of exposure light and absence of swelling in aqueous developer solutions. They resolve steep profile submicron images in a 1.0 μ thick film. They are not adversely affected by reflected light from water surfaces. In order to use MRS-type resists with broader development latitude, optimizing the extent of light absorption is important because the resist profiles strongly depend on development conditions due to increasing solubility towards the resist bottom.     

Manufacture of stainless steel edge filters: an application of electrolytic photopolishing

Electrolytic photopolishing of AISI 304 stainless steel has been used, together with conventional photochemical machining techniques, to produce an edge filter with a surface texture value of 0.065 μm (R_a)     

微透镜阵列的光刻胶热熔制作技术

介绍了利用光刻胶热熔法制作微透镜阵列这种简单、实用的技术。阐明了其原理、工艺流程、关键技术并给出了实验结果。结果表明,光刻胶热熔技术是一种简单、实用的微透镜阵列制作技术。本文的研究结果可为微透镜阵列的进一步研制及产业化提供参考。     

用于圆片级封装的金凸点研制

介绍了电镀法进行圆片级封装中金凸点制作的工艺流程,并对影响凸点成型的主要工艺因素进行了研究.凸点下金属化层(UBM,under bump metallization)溅射、厚胶光刻和厚金电镀是其中的工艺难点,通过大量的实验研究,确定了TiW/Au的UBM体系,得到了优化的厚胶光刻工艺.同时,研制了用于圆片级封装金凸点制作的垂直喷镀设备,选用不同的电镀液体系和光刻胶体系,对电镀参数进行了控制和研究.对制作的金凸点与国外同类产品的基本特性进行了对比,表明其已经达到可应用水平.     

彩色滤光片用光阻剂研究

彩色滤光片为液晶显示中的重要零组件,而光阻剂是彩色滤光片的关键材料,其性能好坏直接影响了彩色滤光片的性能,如色饱和度、色纯度、透过率和耐候性能.因此,光阻剂的制取技术是必须掌握的关键技术,而光阻剂的配方为其主要研究对象.本论文研究了光阻剂中分别增加环氧树脂和润湿剂对其性能的影响.     

Effects of CH2F2 and H2 flow rates on process window for infinite etch selectivity of silicon nitride to ArF PR in dual-frequency CH2F2/H2/Ar capacitively coupled plasmas

The process window for the infinite etch selectivity of silicon nitride (Si₃N₄) layers to ArF photoresist (PR) and ArF PR deformation were investigated in a CH₂F₂/H₂/Ar dual-frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters, such as the low frequency power (P_LF), CH₂F₂ flow rate, and H₂ flow rate. It was found that infinitely high etch selectivities of the Si₃N₄ layers to the the ArF PR on both the blanket and patterned wafers could be obtained for certain gas flow conditions. The H₂ and CH₂F₂ flow rates were found to play a critical role in determining the process window for infinite Si₃N₄/ArF PR etch selectivity, due to the change in the degree of polymerization. The preferential chemical reaction of hydrogen with the carbon in the hydrofluorocarbon (CH_xF_y) layer and the nitrogen on the Si₃N₄ surface, leading to the formation of HCN etch by-products, results in a thinner steady-state hydrofluorocarbon layer and, in turn, in continuous Si₃N₄ etching, due to enhanced SiF₄ formation, while the hydrofluorocarbon layer is deposited on the ArF photoresist surface.     

消色差超构表面复合透镜

超构表面因其体积轻薄易于集成化，有望在某些特定场合取代传统透镜实现多功能光学器件。超构表面的光束偏转角随波长的增加而增大，与传统折射透镜相比产生相反的色散，这种色散又被称为“异常色散”或“负色散”。理论上利用超构表面的负色散和传统折射光学器件的正色散相抵消，可以完全矫正光学系统的色差。由此出发，设计了一种基于光刻胶材料，由Pancharatnam-Berry（PB）相位型超构表面作为第一透镜，传统球面透镜作为第二透镜的消色差超构表面复合透镜，利用时域有限差分数值模拟软件FDTD Solutions探索了该透镜在780～980 nm波段的聚焦性能，证明了消色差光刻胶超构表面复合透镜优异的消色差效果。相对传统的消色差超构表面通过相位补偿来消色差的方法，这种消色差设计简单且高效，为特定波段内的消色差成像提供了一定的借鉴意义。     

光刻胶段差对光刻图形的影响与改善

TFT光刻制程中,光刻胶段差使光胶在同一个光刻平面上,各区域的光刻程度不同,严重影响着光刻图形的质量。文章从光刻胶段差对光刻图形影响的原因进行分析,根据光强在投影光刻机光刻系统中焦点附近与光刻胶内部的变化特点,推导并计算出光刻胶段差区域内光强变化量为零时,光刻系统中光刻平面所应处于的位置,同时结合当前光刻系统焦平面的位置,计算出光刻平面的调整量,并以该调整量对当前光刻平面进行调整。结果表明:对于极限分辨率为2.41μm的投影光刻机,要使厚0.52μm的光刻胶段差内光强变化量为零,光刻平面调整量为9.434 42μm,且对光刻平面调整后10μm后,在DICD(Develop Inspection Critical Dimension)变化量较小的情况下,可显著改善沟道长为2.5μm的GOA(gate drive on array)区域的光刻胶残留。     

Surface textures and process characteristics of the electrolytic photoetching of annealed AISI 304 stainless steel in hydrochloric acid

Electrolytic photoetching of AISI 304 stainless steel surfaces in 10% (w/w) hydrochloric acid has been studied. A surface texture value of 1.35 μm ($\text{R}{}_{\mathrm{a}}$) has been measured for a commercially acceptable rate of etch (10 μm/min). Comparisons of this etching system with FeCl₃-HCl-H₂O spray systems used in conventional photochemical machining have also been made