丙烯酸酯光敏共聚物的合成及其在碱溶性光致抗蚀剂中的应用

本文通过对丙烯酸酯共聚物接枝改性合成了一种碱溶光敏丙烯酸酯共聚物G-S-PSBMHA。首先,用乙烯基类单体自由基聚合制备了共聚物PSBMHA,并利用酸酐与PSBMHA上羟基间的酯化反应接枝得羧酸化产物S-PSBMHA,再通过甲基丙烯酸缩水甘油酯(GMA)上环氧基团与羧基间的开环反应引入光敏基团。用红外光谱(IR)、核磁共振氢谱(1H-NMR)、凝胶渗透色谱(GPC)和差示扫描量热法(DSC)等表征羧酸化产物S-PSBMHA和共聚物G-S-PSBMHA等的结构性能,研究了分子量、双键当量和酸值对共聚物性能的影响,并对其在液体光致抗蚀剂中的应用性能进行了初步考察,如显影性、耐酸性、去膜性和分辨率等。结果表明,当G-S-PSBMHA分子量为2.00×104~2.50×104g/mol,接枝双键当量为1400g/DB,酸值为88mgKOH/g时,所得G-S-PSBMHA可应用于印刷线路板(PCB)液体光致抗蚀剂中,分辨率达25μm。     

New aqueous base developable photoresist for lithographic printing plates applications

Negative photoresists are materials that become insoluble in developing solution when exposed to optical radiation. This work describes the production of simple negative‐working resists, demonstrating aqueous development, for potential printing plate applications. The copolymers comprised glycidyl methacrylate (GMA) and acrylic acid (AA) via free‐radical solution polymerization in methyl ethyl ketone as a solvent using azobisisobutyronitrile as initiator at 60°C. Characterization of the copolymers prepared was carried out via IR, ¹H‐NMR, and thermal analysis techniques. The copolymers of GMA/AA were successfully prepared over a wide range of composition. It was found that the copolymer containing 15 mol % of AA unit in the feed was developed with NaOH on copper plate rather than zinc plate and crosslinked in the presence of photogenerated acid (PAG) caused by acid‐initiated ring‐opening polymerization of pendant epoxide groups. Exposure of the resist films to UV radiation at λ_max = 365 nm results in the generation of acid, and the subsequent baking process at 80°C for 1 min promotes the diffusion of the PAG, which initiates the cationic crosslinking of the epoxide rings. © 2010 Wiley Periodicals, Inc. J Appl Polym Sci, 2010     

Synthesis and characterization of poly(acrylate amic acid) and its application as negative‐tone photosensitive polyimides

The dianhydride monomer 3,3′,4,4′‐benzophenone tetracarboxylic acid dianhydride and two diamine monomers, 4,4′‐diamino‐3,3′‐biphenyldiol (HAB) and 2,4‐diaminophenol dihydrochloride (DAP), were used to synthesize a series of poly(hydroxyl amic acid). Further functionalization by grafting acrylate groups yields the corresponding poly(acrylate amic acid) that underwent a crosslinking reaction on exposure to UV‐light and was used as a negative‐tone photosensitive polyimide (PSPI). The analysis of chemical composition and molecular weight of these poly(amic acid)s determined by nuclear magnetic resonance (NMR) spectroscopy, Fourier transform infrared spectroscopy, and gel permeation chromatography revealed that the molecular weight of the poly(hydroxyl amic acid) increased with the molar content of HAB in the feedstock, because HAB exhibited higher polymerization reactivity than DAP. Moreover, the degree of grafting acrylate groups onto poly(hydroxyl amic acid) was determined by ¹H‐NMR spectroscopy. The photoresist was formulated by adding 2‐benzyl‐2‐N,N‐dimethylamino‐1‐(4‐morpholinophenyl) butanone (IRG369) and isopropylthioxanthone as a photoinitiator, tetra(ethylene glycol) diacrylate as a crosslinker, and tribromomethyl phenyl sulfone as a photosensitizer. The PSPI precursor exhibited a photosensitivity of 200 mJ/cm² and a contrast of 1.78. A pattern with a resolution of 10 μm was observed in an optical micrograph after thermal imidization at 300°C. © 2009 Wiley Periodicals, Inc. J Appl Polym Sci, 2009     

h-线敏感光致产碱剂PNCDP的合成与表征

设计并合成了一种对高压汞灯发射光谱中的h-线(405 nm)敏感的新型光致产碱剂(PBG)——N-{[(5-哌啶-2-硝基苄基)氧]-羰基}-2,6-二甲基哌啶(PNCDP).通过红外(IR)、核磁(NMR)以及元素分析对PNCDP的结构进行了表征.紫外-可见光谱(UV-Vis)测试结果表明,与传统的i-线(365 nm)敏感PBG——N-{[(4,5-二甲氧基-2-硝基苄基)氧]-羰基}-2,6-二甲基哌啶(DNCDP)相比,PNCDP的最大紫外吸收波长为395.5 nm,较DNCDP红移了52.5 nm.初步光刻实验表明,PNCDP对h-线具有较好的敏感度.     

简易匀胶机系统研制与应用

主要就简易匀胶机系统的结构设计、控制电路设计、技术特点、工作原理、性能、应用场合、影响质量的关键因素等进行了阐述。     

我国光刻胶的市场现状及发展趋势

现代微电子技术按照摩尔定律在不断发展．光刻技术也经历了从G线（436nm）,I线（365nm）,到深紫外248nm．及目前的193nm光刻的发展历程．相对应于各曝光波长的光刻胶也应运而生．光刻胶中的关键组分,如成膜树脂、感光剂、添加剂也随之发生变化．使光刻胶的综合性能能更好地满足集成工艺制程要求。目前集成电路制作中使用的主要光刻胶见表1。     

光敏纳米SiO2制备及在光致抗蚀材料中的应用

经溶胶-凝胶法制得纳米SiO2,用不同结构的双键硅烷偶联剂对其表面进行原位接枝改性,得到两种光敏纳米SiO2(M70SiO2和M50SiO2),并将其添加到紫外光固化丙烯酸酯预聚物中,制得杂化光致抗蚀材料。通过测定光敏参数(D0n.5)考察其光敏性知,杂化光致抗蚀材料光敏性明显增加,当光敏纳米SiO2的质量分数增至13.7%～15.8%时,光敏参数达25 mJ/cm2～27 mJ/cm2;用差示扫描量热仪(DSC)及热机械分析(TMA)考察抗蚀材料的热性能,结果显示,随光敏纳米SiO2用量增加Tg升高,热膨胀系数减小,同时分辨率和精密性并未因光敏纳米SiO2的加入而降低。     

用电子束工艺反转制造1:1精密掩模的工艺技术研究

本文主要描述了用电子束工艺反转技术制造1：1精密掩模的新方法，给出了从基本原理入手来确定工艺流程和选定工艺条件的过程，并给出制作实例说明了该项技术所取得的经济效益和社会效益。     

插指电极掩膜的设计与制造

针对插指电极制造中所涉及的掩膜制备复杂以及高成本问题,提出了一种插指电极透明掩膜的制造方法.通过AutoCAD软件设计了指形、螺旋形和方形三种不同图案的插指电极,采用透明纸和喷墨打印机将插指电极图案制造成透明掩膜,利用常规光刻技术将透明掩膜上的插指电极图案转移至硅片上的铝金属层,利用高倍显微镜对插指电极图案及插指电极进行观察.通过将本方法应用于太阳能电池,并对太阳能电池的电学特性进行测试,证实了本方法在太阳能电池领域的实用性.     

Colorimetric Recording of Thermal Conditions on Polymeric Inverse Opals

Recording thermal conditions, i.e., temperature and time, is of great importance for various applications. Although thermometers can measure temperature and record its temporal change with electronic devices, they are nondisposable and not patch‐type, restricting their uses. Here, photonic films are designed that record thermal condition through irreversible structural deformation and intuitively report it with color patterns. The photonic films are inverse opals made of negative photoresist on a solid support, where the cross‐linking density of the photoresist is regioselectively adjusted. The photonic films show a gradual blueshift of structural color upon heating due to anisotropic compression of the inverse opal, of which the rate depends on temperature and cross‐linking density. For single cross‐linking density, thermal input is quantified from the color change in the form of coupled temperature and time. With multiple cross‐linking densities in a single film, the multicolor pattern is developed, from which the temperature and time are decoupled and separately estimated for isothermal condition.