Copper diffusion into silicon substrates through TaN and Ta/TaN multilayer barriers

A study of copper (Cu) diffusion into silicon substrates through Ta nitride (TaN) and tantalum (Ta/TaN) layers was investigated based on an experimental approach. TaN _x and Ta/TaN _x thin films were deposited by radiofrequency sputtering under argon (Ar) and Ar-nitrogen (N) plasma. The influence of the N₂ partial pressure on the microstructure and the electrical properties is reported. X-ray diffraction patterns showed that the increase of the N₂ partial pressure, from 2 to 10.7%, induces a change in the composition of the δTaN phase, from TaN to TaN_1.13, as well as an evolution of the dominant crystallographic orientation. This composition change is related to a drastic increase of the electrical resistivity over a N₂ partial pressure of 7.3%. The efficiency of TaN layers and Ta/TaN multilayer diffusion barriers was investigated after annealing at temperatures between 600 and 900 °C in vacuum. Secondary ion mass spectrometry profiles showed that Cu diffuses from the surface layer through the TaN barrier from 600 °C. Cu diffusion mechanisms are modified in the presence of a Ta sublayer. This article was presented at the Multicomponent-Multiphase Diffusion Symposium in Honor of Mysore A. Dayananda, which was held during TMS 2006, the 135th Annual Meeting and Exhibition, March 12–16, 2006, in San Antonio, TX. The symposium was organized by Yongho Sohn of the University of Central Florida, Carelyn E. Campbell of National Institute of Standards and Technology, Richard D. Sisson, Jr., of Worcester Polytechnic Institute, and John E. Morral of Ohio State University.     

Ti衬底层对FePt颗粒膜的微结构和磁特性的影响

在室温下,应用对靶直流磁控溅射设备在普通玻璃基片上制备了FePt(30nm)/Ti(tnm)颗粒膜样品,随后,在真空中进行了原位退火.详细研究了Ti衬底层对FePt颗粒膜的微结构和磁特性的影响.X射线衍射图谱表明样品形成了较有序的L10织构,Ti和FePt形成了三元FePtTi合金.当Ti层厚度t=5 nm、退火温度Ta=500℃时,样品具有高度有序的L10织构、小的颗粒尺寸和优异的磁特性.矫顽力超过了6.7 kOe,饱和磁化强度为620emu/cc.并且具有较小的开关场分布.结果表明FePt/Ti颗粒膜系统可作为超高密度磁记录介质的候选者.     

Fabrication of ZnO films by radio frequency magnetron sputtering and annealing

ZnO thin films were deposited on Si（111） substrates through a radio frequency （rf） magnetron sputtering system. Then the samples were annealed at different temperatures in air ambience and ammonia ambience respectively. The structure and composition of the ZnO films were studied by X-ray diffraction （XRD） and X-ray photoelectron spectroscopy （XPS）. The morphology of the samples was studied by scanning electron microscopy （SEM）. Measured results show that ZnO films with hexagonal wurtzite structure were grown on Si（111） substrates when annealed in the two ambiences. The volatilization process of ZnO in the ammonia ambience at high temperature was discussed and the mechanism of the reaction was analyzed.     

Tribological properties of 2024 aluminum alloy plasma-based ion implanted with nitrogen then titanium

1　INTRODUCTIONOwingtolowdensityandhighspecificstrength ,aluminumanditsalloysareextensivelyusedinmanyfields ,especiallyinaviationandspaceindustry .Butlowhardnessandlowwearresistanceoftenlimittheirengineeringapplications .Surfacemodificationforalu minumanditsalloysbyionimplantationoffersthepossibilityofwideningtheirapplicationswherehighwearresistanceandlowdensityarerequired[15] .Sincenitrogenionisconvenienttoobtainandeasytocontrol,andAlNhasexcellentmechanicalproperties ,nitrogenionimplant…     

氨化硅基Ga2O3／Al2O3制备GaN薄膜性质研究

研究了Ga2O3／Al2O3膜反应自组装制备GaN薄膜。首先利用磁控溅射法在硅衬底上制备Ga2O3／Al2O3膜，再将Ga2O3／Al2O3膜在高纯氨气气氛中氨化反应得到GaN薄膜。用傅里叶红外谱仪(FTIR)，X射线衍射(XRD)和扫描电镜(SEM)对试样进行结构、组分和形貌分析。通过分析薄膜各方面的性质，得出了用此方法制备氮化镓薄膜的Al2O3缓冲层最佳的厚度为15nm左右，最佳氨化条件是在900℃下氨化15min。     

调制周期对TaN/NbN纳米多层膜力学性能的影响

本研究选择钽和铌的氮化物作为个体层材料,利用FJL560CI2型超高真空射频磁控与离子束联合溅射系统制备TaN、NbN及-系列的TaN/NbN多层薄膜.通过XRD和纳米力学测试系统以及摩擦磨损仪分析了该体系合成以后的晶体结构,以及调制周期对机械性能的影响.结果表明:多层膜的纳米硬度值普遍高于两种个体材料混合相的硬度值;当调制周期为8.5 nm时,TaN/NbN多层膜达到最大硬度30 GPa,结晶出现多元化,多层膜体系的硬度、应力、弹性模量以及膜-基结合性能均达到最佳效果.     

泡沫塑料表面的磁控溅射镀膜技术研究

对硬质聚氨酯泡沫塑料进行适当的前处理(涂刮不饱和聚酯腻子和喷涂双组份聚氨酯清漆),再采用磁控溅射镀膜技术对其进行紫铜T2镀膜,能够有效地降低泡沫塑料的吸水率,提高尺寸稳定性.     

Application of optical transmission interferometry for in-situ structural investigations of titanium dioxide sputter-deposited coatings

Titanium dioxide coatings (from 0.1 to 1.5 μm thick) have been dc sputter-deposited on glass slides from titanium targets in various Ar-O₂ reactive gas mixtures. Deposition rate and optical properties were controlled in-situ by optical transmission interferometry (OTI) with an optical fibre located behind the glass substrate in order to perform a real-time control of transmittance of the growing film. Thus, it is possible to determine in-situ the optical indices (n, k) and the thickness of the as-deposited film by using a simple simulation, developed on Matlab software. The optical properties of the films were investigated in relation to their structure, which depends on the sputtering conditions adopted. In particular, the effects of the sputtering pressure (working pressure and oxygen partial pressure), the discharge power and the substrate location into the reactor are investigated in detail. Films structure is assessed by standard grazing incidence X-ray diffraction (XRD).     

K17F高温合金溅射微晶层的抗高温氧化行为

研究了铸态高温合金Ｋｌ７Ｆ及其溅射微晶（小于０．ｌμｍ）层的高温氧化行为．结果表明，微晶层为均匀的γ相组织，它大幅度提高铸态合金的９００至１０００℃的抗氧化性能，甚至比渗Ａｌ涂层还好在高温下，Ｋ１７Ｆ生成以Ａｌ２Ｏ３为主，含有Ｎｉ，Ｃｒ，Ｔｉ氧化物的氧化膜，它在氧化过程中易剥落，而溅射微晶层表面只生成单一的α－Ａｌ２Ｏ３膜，具有优异的防护性和粘附性，在５００ｈ的氧化过程中未见剥落．     

Preparation and characterization of GaN films grown on Ga-diffused Si （111） substrates

Hexagonal GaN films were prepared by nitriding Ga2O3 films with flowing ammonia. Ga2O3 films were deposited on Ga-diffused Si (111) substrates by radio frequency (r.f.) magnetron sputtering. This paper have investigated the change of structural properties of GaN films nitrided in NH3 atmosphere at the temperatures of 850, 900, and 950℃ for 15 min and nitrided at the temperature of 900℃ for 10, 15, and 20 rain, respectively. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) were used to analyze the structure, surface morphology and composition of synthesized samples. The results reveal that the as-grown films are polycrystalline GaN with hexagonal wurtzite structure and GaN films with the highest crystal quality can be obtained when nitrided at 900℃ for 15 min.