A novel STAP method for the detection of fast air moving targets from high speed platform

Space-time adaptive processing (STAP) is an effective method for detecting moving target in airborne/spaceborne radar.However,the detection of fast air moving targets from high speed platform is challenged by the range walk of both the clutter and moving targets.It is well known that keystone formatting can be used to compensate for the range walk of multiple moving targets simultaneously without using the knowledge of the motion parameters.However,in the presence of serious Doppler ambiguity of fast air moving targets,distribution of the clutter will be affected by the keystone formatting matched to the ambiguity number of targets,and as a result the STAP performance will degrade.In this paper,a novel STAP method is proposed for the detection of fast air moving targets from high speed platform,which can deal with the range walk of both clutter and targets.Effectiveness of the new method is verified via simulation examples.     

电子阅览室Squid上网过滤系统升级及运维工作精要

文中对本馆Squid上网过滤系统运行7年来的运维工作做了总结,这些艰辛得来的一线运维工作经验,对很多想使用该过滤系统,正使用该过滤系统的单位将会有很大的帮助。     

IP/MPLS技术在移动通信信息系统中的应用研究

中国移动集团四川省移动公司MDCN网络本着先进性、现实性和经济性统一的原则进行设计,网络具有高性能、高可靠性、扩展性、标准化和可管理性的特点,能灵活地根据需求提供不同的服务等级并保证服务质量。该网络将采用最先进的IP/MPLS技术和高速设备,为各类信息系统提供统一的综合业务网络平台。     

Breakdown voltage analysis for the new RESURF AlGaN/GaN HEMTs

This paper demonstrates that the depletion process for AlGaN/GaN high electron mobility tran-sistors(HEMTs)is different than that for silicon power devices by analyzing active region depletion.Based on the special breakdown principle that occurs in AlGaN/GaN HEMTs,we propose a new reduced surface field AlGaN/GaN HEMT with a double low-density drain(LDD)and a positively charged region near the drain to optimize the surface electric field and increase the breakdown voltage.In this structure,two negative charge regions with different doses are introduced into the polarization AlGaN layer to form a double LDD and decrease the high electric field near the gate by depleting two-dimensional electron gas.A positively charged region is added to the electrode near the drain to decrease the high electric field peak at the drain edge.By applying ISE(integrated systems engineering)simulation software,we verify that the virtual gate effect occurs in the AlGaN/GaN HEMTs.The breakdown voltage is improved from 257 V in the conventional structure to 550 V in the proposed structure.     

Localized relaxation theory of circuits and its applications in electro-thermal analyses

In the high-performance IC design with increasing design complexity,it is a very important design content to efficiently analyze IC parameters.Thus,the electro-thermal (ET) analyses including power/ground (P/G) analysis and thermal analysis are hot topics in today’s IC research.Since ET analysis equation has a sparse,positive definite and strictly diagonally dominant coefficient-matrix,we prove that the ET analysis has the advantage of locality.Owing to this advantage,localized relaxation method is formally proposed,which has the same accuracy as the global relaxation done with the constraint of the same truncation error limitation.Based on the localized relaxation theory,an efficient and practical localized successive over-relaxation algorithm (LSOR2) is introduced and applied to solve the following three ET analysis problems.(1) Single-node statistical voltage analysis for over-IR-drop nodes in P/G networks;(2) single-node statistical temperature analysis for hot spots in 3D thermal analysis;(3) fast single open-defect analysis for P/G networks.A large amount of experimental data demonstrates that compared with the global successive over-relaxation (SOR) algorithm,LSOR2 can speed up 1-2 orders of magnitudes with the same accuracy in ET analyses.     

采用B/S架构设计与实现超市配送系统

系统采用B/S架构。整个系统由六大模块构成,分别是人员基本信息管理模块、商品信息管理模块、连锁店管理模块、商品入库管理模块、商品配送管理模块、退出系统模块。整个系统能够独立运行,使用方便,能够及时地分析企业进销存情况,提高工作效率,能给企业带来更大的利益。     

双轴应变下GaN有效质量的计算及其对迁移率的影响

通过计算双轴应变下氮化镓的电子能带结构,给出了GaN有效质量与应变的变化关系。在弛豫时间近似的条件下,这种关系决定了双轴应变AlGaN/GaN中二维电子气(2DEG)的迁移率的改变。在其他物理参量不变的情况下,这种二维电子气迁移率将随着张应变的增加而增加,并随着压应变的增加而减小。计算结果表明,张应变对2DEG迁移率的影响要比压应变大。此外,GaN有效质量的变化在低温时对迁移率的作用更明显。而在低温低浓度的条件下,迁移率却对有效质量的依赖很小。