锻热淬火工艺对工具钢碳化物粒度的影响

研究了锻热淬火工艺对Ｔ１０钢和ＧＣｒ１５钢碳化物技度的影响。结果表明，碳化物粒度随变形量的增大而细化；终锻温度在高于碳化物析出的温度范围内变化，其碳化物粒度都同样细小；终锻温度不宜过低，否则将使碳化物变粗。     

氮对纳米硅氮薄膜品化的影响

在电容式耦合等离子体化学气相沉积系统中，用高氢稀释硅烷和氮气为反应气氛制备纳米硅氮（ｎｃ－ＳｉＮｘ：Ｈ）薄膜结果表明：当Ｎ＿２／ＳｉＨ＿４气体流量比（Ｘｎ）从１增加为４时，薄膜的晶态年从５８％降至１４％，晶粒尺寸从１０ｎｍ降至５ｕｍ，Ｎ／Ｓｉ含量比从０．０３增至０．１２．当Ｘｎ≥５，则生成非晶硅氮（ａ－ＳｉＮｘ：Ｈ）薄膜．当Ｘｎ从１增加为１０时，薄膜暗电导率从１０￣（－５）（Ωｃｍ）￣（－１）降至１０￣（－１１）（Ωｃｍ）￣（－１），具有逾渗行为，这与薄膜的晶态率紧密相关．     

Study on Factors Affecting the Structure of High SpeedSteel Ingot Produced by ESR

ＳｔｕｄｙｏｎＦａｃｔｏｒｓＡｆｆｅｃｔｉｎｇｔｈｅＳｔｒｕｃｔｕｒｅｏｆＨｉｇｈＳｐｅｅｄＳｔｅｅｌＩｎｇｏｔＰｒｏｄｕｃｅｄｂｙＥＳＲＬｉＺｈｅｎｇｂａｎｇ；ＣｈｅＸｉａｎｇｑｉａｎＡｂｓｔｒａｃｔ：Ｔｈｅｉｎｆｌｕｅｎｃｅｏｆｔｈｅｍｅｔａｌｐ...     

高温过热器12Cr2MoWVTib（102）钢管的显微组织和相结构分析

本文对原始状态和在火力发电厂使用不同时间的高这热器１０２钢管进行了显微组织和相结构变化规律的探讨和研究。显微组织研究表明，１０２钢管在高温高压下长期运行过程中，使用温度对显微组织和碳化物相有明显影响，而使用时间对其影响不如温度影响强烈。碳化物颗粒图象分析表明，碳化物随着使用时间缓慢长大，而新的碳化物不沉淀，使颗粒总数不断增加，颗粒，间距逐渐缩小。Ｘ射线衍射数据证明，钢管在高温长期使用过程中，ＭＣ相     

Effect of epitaxial realignment on the leakage behavior of arsenic-implanted,as-deposited polycrystalline Si-on-single crystal Si diodes

When dopants are indiffused from a heavily implanted polycrystalline silicon film deposited on a silicon substrate, high thermal budget annealing can cause the interfacial “native” oxide at the polycrystalline silicon-single crystal silicon interface to break up into oxide clusters, causing epitaxial realignment of the polycrystalline silicon layer with respect to the silicon substrate. Anomalous transient enhanced diffusion occurs during epitaxial realignment and this has adverse effects on the leakage characteristics of the shallow junctions formed in the silicon substrate using this technique. The degradation in the leakage current is mainly due to increased generation-recombination in the depletion region because of defect injection from the interface.     

非晶硅基薄膜的等离子体刻蚀光发射谱检测

本文研究了采用锁定放大相干检测技术的等离子体光发射谱检测系统。用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。分析了检测结果和刻蚀机理。     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

a—Si等离子体刻蚀的研究

将等离子体刻蚀应用于非晶硅的刻蚀中,得到边缘整齐、分辩率高、重复性好、图形清晰的满意效果。通过调整工艺条件,可严格控制刻蚀速率。其特点优于湿式化学腐蚀,是一种非晶硅特性研究和器件制造中值得推广和使用的方法。     

半导体ZnTe/GaAs界面层错的高分辨显微分析

本项研究对经热壁外延（ＨＷＥ）生长在ＧａＡｓ基底上的ＺｎＴｅ进行分高分辨显微结构的观察，在ＺｎＴｅ／ＧａＡｓ界面上不仅存在着混合型全位错的扩展，而且首次发现类似螺旋位错分解的层错，并将其归结为原子在不全位错之后的堆积。     

硅中硼离子注入校准样品的研制

本文主要介绍了硅中硼离子注入校准样品的制备与研究。分别用三台SIMS仪器对样品进行了深度剖析与比对,并对用作校准目的的样品主要参数进行了定值。