Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.     

尿素对以硝酸铝和葡萄糖为原料合成氮化铝粉末反应过程中相变及反应速率的影响

以硝酸铝(Al(NO3)3·9H2O)和葡萄糖(C6H12O6·H2O)为原料,利用碳热还原法制备氮化铝粉末,研究了尿素对前驱物的制备及前驱物氮化反应的影响,研究发现添加尿素合成的前驱物和未添加尿素合成的前驱物在氮化反应过程中相变和反应速率存在较大差异。在没有添加尿素合成的前驱物的氮化反应过程中,出现了γ-Al2O3、α-Al2O3、AlON和AIN相,该前驱物的反应速率慢,完全氮化需要在1600℃下才能完成。对于添加尿素合成的前驱物而言,在其氮化反应过程中仅出现了γ-Al2O3和AIN相,没有α-Al2O3和AlON的生成,AIN直接由γ-Al2O3氮化生成,该前驱物的氮化反应速率快,氮化反应温度低,在1400℃下即可实现完全氮化。分析讨论了两种前驱物的氮化反应速率不同的主要原因,并利用XRD、SEM等分析方法对粉末进行了表征。     

MCM用氮化铝共烧多层陶瓷基板的研究

通过实验优化AlN(氮化铝)瓷料配方及排胶工艺,对共烧W(钨)导体浆料性能及AlN多层基板的高温共烧工艺进行了研究,并对AlN多层基板的界面进行了扫描电镜分析。采用AlN流延生瓷片与W高温共烧的方法,成功地制备出了高热导率的AlN多层陶瓷基板,其热导率为190 W/(m·K),线膨胀系数为4.6106℃1(RT~400℃),布线层数9层,W导体方阻为9.8 m,翘曲度为0.01 mm/50 mm,完全满足高功率MCM的使用要求。     

添加CaF2-YF3的AlN陶瓷的热导率

用CaF2和YF3做添加剂，在1750℃制备了热导率高于170W/m.K的的AlN陶瓷，并用XRD和SEM研究了AlN陶瓷在烧结过程中的相组成，微结构以及晶格参数的变化，并讨论了其对热导率的影响，研究发现，当使用CaF2-YF3做添加剂时，微结构差异对AlN陶瓷热导率的影响很小，AlN陶瓷的热导率主要由AlN晶格氧缺陷浓度决定，由于CaF2-YF3能有效降低AlN颗粒表面的氧含量，从而有利于获得高的热导率。     

Stepwise-Graded Si3N4–SiC Ceramics with Improved Wear Properties

The processing of stepwise graded Si₃N₄/SiC ceramics by pressureless co-sintering is described. Here, SiC (high elastic modulus, high thermal expansion coefficient) forms the substrate and Si₃N₄ (low elastic modulus, low thermal expansion coefficient) forms the top contact surface, with a stepwise gradient in composition existing between the two over a depth of ∼1.7 mm. The resulting Si₃N₄ contact surface is fine-grained and dense, and it contains only 2 vol% yttrium aluminum garnet (YAG) additive. This graded ceramic shows resistance to cone-crack formation under Hertzian indentation, which is attributed to a combined effect of the elastic-modulus gradient and the compressive thermal-expansion-mismatch residual stress present at the contact surface. The presence of the residual stress is corroborated and quantified using Vickers indentation tests. The graded ceramic also possesses wear properties that are significantly improved compared with dense, monolithic Si₃N₄ containing 2 vol% YAG additive. The improved wear resistance is attributed solely to the large compressive stress present at the contact surface. A modification of the simple wear model by Lawn and co-workers is used to rationalize the wear results. Results from this work clearly show that the introduction of surface compressive residual stresses can significantly improve the wear resistance of polycrystalline ceramics, which may have important implications for the design of contact-damage-resistant ceramics.     

Mössbauer Study of the Influence of Fe-Si-N Liquid in the Synthesis of β-Si3N4 from Silica

Mössbauer spectra of the products obtained by carbothermal reduction and distribution of silica in the presence of iron in the temperatures range 1200^o to 1540^o were studied. The preponderance of β- Si₃N₄ over the α form at a higher reaction temperature were assumed to be related to the formation of an Fe-Si-N liquid. The liquid did not alter its composition with the variation of reduction-temprature, Iron had no effect on the reaction mechanism below 1300^oC.     

Effect of Dilution and Porosity on Self-Propagating High-Temperature Synthesis of Silicon Nitride

Self-propagating high-temperature synthesis is a very easy and low-cost method to synthesize Si₃N₄. The nitriding of silicon powder takes place in a self-sustained regime under high pressures of nitrogen with dilution of silicon by Si₃N₄. In this work effects of dilution and green-mixture porosity on combustion velocity and phase content of reaction products are studied. Results are compared with previous work of other authors and different behaviors are found. An explanation of these behaviors is given.     

离子注入对铁及其低合金、铝及其合金耐腐蚀性能的影响

离子注入对金属腐蚀行为的研究已达30年．研究结果表明离子注入对改变金属表面成分和表面性能是极为有效的技术．本文概述了离子注入对铁及其低合金、铝及其合金的腐蚀电化学行为的影响．涉及的注入离子达十余种。     

住宅建筑带钢副框铝合金门窗防渗漏施工技术

使用自粘性防水卷材对带钢副框的铝合金门窗窗边进行粘接,以防止雨水通过副框与墙体之间的缝隙渗漏到室内,重点介绍了详细的施工措施。