IP电话的实现及其关键技术

IP电话在推出后短短十年的时间以其低价、高效、灵活的特点迅速发展起来。本文介绍了IP电话的基本结构，比较了IP电话与普通电话的优缺点，讨论了IP电话的相关协议及关键技术，在这些基础上进一步指出IP电话的发展趋势，相信IP将成为未来信息通信的主导技术。     

高频地波雷达相位补偿系统

OSMAR2000采用的是“一发八收,收发共用”模式的相控阵高频地波雷达.为了扩大其探测的范围,在新的雷达系统中将采用多发多收的模式,从而导致当信号通过通道后,信号的相位会因受到通道的调制而发生改变,使得雷达无法正常工作,因此需要对通道的相位进行实时监控和补偿.在参考了低频段的相位测量原理和射频段的相移电路的设计理论的基础上,该文提出了基于差分放大器、容阻和容感器件的高频地波雷达收发通道的相位控制系统.     

大电流监测信号提取的光收发及信号处理

近年来,大电流的监测成了人们十分关心的问题,这是由于大电流有强磁、高压、电流大等一系列的直接监测所不能克服的问题。这就需要把高压大电流的强电信号,经过提取后变成能在实验室中直接观测的弱电信号。为此,如何从高压大电流的信号中提取出随实时信号变化而实时变化的小信号就变成了一个关键问题。详细介绍了监测信号提取的光收发电路原理和后续信号处理电路,分析了各部分的作用,给出了必要的分析结果。     

Brittle detachment of a stiffener bonded to an elastic plate

The diffusion of contact stresses between an elastic bar, bonded to an elastic half-plane and loaded longitudinally, requires the integration of a singular integral equation. The solution of this equation is not available in closed form, but only by a series expansion of the contact tangential force mutually transmitted between the stiffener and the plate. Since forty years it has been realized that the expansion of the solution in terms of Chebyshev polynomials is its most convenient method of representation. The procedure can also be extended to treat the brittle detachments of the tips of the stiffener when, according to Griffith's criterion of fracture, a balance can be virtually established between the increase of strain energy due to a propagation of cracks and the surface energy created.     

Mathematical analysis of viscometric (polymer) flow fields in capillaries: Taylor dispersion revisited

A general formulation for capillary flow of two miscible fluids – one a dilute plug of polymer fluid inserted into a fully developed Poiseuille flow of the other, a Newtonian stream – is examined for its long time behavior. Phenomenologically, the system evolves from an initial state, that of a plug within the boundaries of sharp, well defined fronts inside a Newtonian stream, to a more homogenized state in the very long time scale. This problem was addressed by G.I. Taylor but with regard to a system of two Newtonian fluids, leading to the well-known results commonly described as `Taylor axial dispersion'. In this paper, a general and systematic perturbation analysis is presented from which Taylor's result is recovered as a special case of a more general solution which applies to fluids incorporating elastic properties. In particular, the influence of viscoelasticity and (polymer) diffusivity on the observed pressure profile in the capillary conduit is examined. This effect is clearly separated out for small Peclet number flows using asymptotic and numerical analysis. The results identify the influence of fluid viscosity, elasticity, and diffusivity on the observed pressure profile and form the basis for the improved characterization of polymeric elasticity using capillaries – a finding that is of significant scientific and commercial interest. These results were obtained by the authors as a class of observations resulting from the perturbation analysis of forced-flow capillary devices in viscoelastic fluid property investigation.     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.     

基于参差距离的相位差变化值的解模糊方法研究

利用相位差及其变化率对辐射源进行定位是新近提出的一种快速单基无源定位方法。本文分析了利用相位干涉议得到的相位差变化值的相位模糊特点,提出了一种利用相位干涉仪的接收天线之间的参差距离对相位差变化值进行解模糊的方法,讨论了正确解模糊的条件和范围,并给出了仿真结果。     

DDS技术在数字激光相位测距仪中的应用

本文介绍了直接数字合成(DDS)技术在激光相位测距仪中的应用。使用该技术研制的数字激光相位测距仪具有操作简便、携带方便、性能可靠的特点，测相精度优于干分之一。     

防治畜类寄生线虫的又一阿维菌素类化合物--道拉菌素

道拉菌素是利用生物突变合成方法得到的新型阿维菌素族广谱杭寄生虫药。它的化学结构和作用机制与依维菌素相似。试验证实道拉菌素在低剂量下对多种体内外寄生虫具有良好的防治效果。