The use of SIMS to investigate the incorporation of oxygen in CoO scales

SIMS was used to locate O¹⁸ in a thick oxide scale grown on a cobalt specimen oxidized first in O¹⁶ and subsequently in O¹⁸. Analyses were performed in depth profile from the oxide-gas interface and in step scan across a polished cross section. SIMS was found to be well suited to this type of oxygen tracer study. Eighty percent of the O¹⁸ was located in the inner quarter of the scale with a maximum value of 70% 10–15 from the metal-oxide interface. The distribution of the remaining O¹⁸ was essentially uniform in the outer 3/4 of the scale at an average value of 4.6%. There was, however, a layer 150 nm thick highly enriched in O¹⁸ at the oxide-gas interface. The O¹⁸ in the outer 3/4 of the porous scale is probably the result of normal exchange processes. The form of the distribution near the metal-oxide interface cannot be explained at this time.     

Bioimaging TOF-SIMS of tissues by gold ion bombardment of a silver-coated thin section

The imaging time-of-flight secondary-ion-mass-spectrometry (TOF-SIMS) method was utilized to address the problem of cholesterol localization in rat tissues. Rat kidneys were fixed, cryoprotected by sucrose, frozen, sectioned by cryoultramicrotomy, and dried at room temperature. The samples were either covered with a thin silver layer or analyzed uncovered in an imaging TOF-SIMS instrument equipped with an Au1-3(+)-source. The yield of desorbed secondary ions for some species was up to 600-fold higher after silver coating of the samples. Reference samples of cholesterol were silver-coated and analyzed by TOF-SIMS to define significant peaks, specific for cholesterol. Such peaks were found at m/z = 386 (C27H46O+), m/z = 493 (C27H46O107Ag+), m/z = 495 (C27H46O109Ag+), m/z = 879 (C54H92O2 107Ag+), and m/z = 881 (C54H92O2 109Ag+). The silver-cationized cholesterol (493 < or = m/z < or = 495) signal was localized by imaging TOF-SIMS in the kidney sections and showed a high cholesterol content in the kidney glomeruli. A more diffuse distribution of cholesterol was also found over areas representing the cytoplasm or plasma membrane of the epithelial cells in the proximal tubules of rat kidney.     

闭管扩散Zn对InP表面性质的影响

利用闭管扩散方法以Zn3P2为扩散源，在不同扩散温度和扩散时间下对非故意掺杂InP (100）晶片进行扩散. 用电化学C-V法（ECV）和二次离子质谱法(SIMS)分别测出了空穴浓度和Zn的浓度随深度的分布曲线. 结果表明扩散后InP表面空穴和Zn的浓度在扩散结附近突然下降，InP表面空穴浓度主要取决于扩散温度，扩散深度随着扩散时间的增长而变大，InP表面Zn浓度一般比空穴浓度高一个数量级. 另外对扩散后的样品进行光致发光（PL) 测试，表明在保证表面载流子浓度的同时，适当降低扩散温度和增加扩散时间能减小对InP表面性质的影响.     

Investigation of the implanted phosphorus in a boron doped SiGe epitaxial layer

Phosphorus diffusion into strained SiGe layers was studied by different methods. Doping profiles and carrier concentration profiles N(x), depth of pn junction, Ge content in SiGe and thickness of epitaxial layer were measured and simulated. Several experimental methods such as secondary ion mass spectroscopy, spreading resistance method, Raman spectroscopy—and process simulator ISE TCAD have been used. The results obtained by different methods and at different places of work have been compared and analysed.     

TOF SIMS Study on PAHs in Individual Particle from a Power Station

The individual particles collected from a power station were analyzed by time of flight seeondary ion mass spectrometry (TOF SIMS). The result indicates the presence of the polycyclic aromatic hydrocarbon (PAHs) as well as the oxygenated one. They might be derived from the incomplete cornbustion of coals. SIMS has proved to be a rapid method for the qualitative analysis of PAHs and OPAHs absorbed on the aerosol particles. New perspectives for better understanding the SIMS spectra obtained from complex mixture such as environmental samples have been opened.     

大气单颗粒物中无机元素的二次离子质谱研究

采用飞行时间式二次离子质谱对大气单颗粒物（20μm以下）进行了探索性研究,并用硅片、铜片、镀银铜片和镀金铜片作为分析基片进行了对比实验;对以镀金铜片基片得到的谱图进行了金属元素分析,单与相同样品总颗粒物的ICP－AES分析结果进行了比较,结果表明：镀金铜片基片的分析效果最佳;ICP－AES检测出的金属元素除Cd外,在二次离子质谱图上均有体现。因此,单颗粒物含有总颗粒物的“指纹”信息。     

MOVPE生成AlGaInAs/InP应变量子阱材料研究

用低压金属有机化学气相沉积(LP-MOCVD)设备生长了AlGaInAs压应变量子阱材料、应变补偿量子阱材料并进行了材料特性的测试,通过二次离子质谱仪(SIMS)的测试讨论了材料中氧含量对材料特性的影响,通过采用高纯原料和纯化载气,生长出了较高质量的AlGaInAs应变量子阱材料氧含量小,光荧光强度大(25mW,PL=0.3),光荧光谱线窄(FWHM=31meV)。     

SIMOX材料顶层硅膜中残余氧的行为

利用光致发光谱 (PL)和二次离子质谱 (SIMS)检测了不同退火条件下处理的 SIMOX材料的顶层硅膜 .实验结果显示 ,SIMOX顶层硅膜的 PL 谱有三个峰 :它们是能量为 1.10 e V的 a峰、能量为 0 .77e V的 b峰和能量为0 .75 e V的 c峰 .与 RBS谱相比 ,发现 a峰峰高及 b/ a峰值比是衡量顶层硅膜单晶完整性的标度 .谱峰 b起源于SIMOX材料顶层硅膜中残余氧 ,起施主作用 .SIMS测试结果显示 ,谱峰 c来源于 SIMOX材料顶层硅膜中的碳和氮 .