SCB火工品的研究与发展

文章评述了半导体桥火工品问世以来的研究成果与发展趋势。主要内容有半导体桥作用机理、半导体桥的结构与封装、半导体桥火工品的特点、半导体桥火工品的应用、半导体桥火工品的研究和发展趋势。     

Enhanced Photoelectrochemistry in CdS/Au Nanoparticle Bilayers

Three different configurations of Au‐nanoparticle/CdS‐nanoparticle arrays are organized on Au/quartz electrodes for enhanced photocurrent generation. In one configuration, Au‐nanoparticles are covalently linked to the electrode and the CdS‐nanoparticles are covalently linked to the bare Au‐nanoparticle assembly. The resulting photocurrent, φ = 7.5 %, is ca. 9‐fold higher than the photocurrent originating from a CdS‐nanoparticle layer that lacks the Au‐nanoparticles, φ = 0.8 %. The enhanced photocurrent in the Au/CdS nanoparticle array is attributed to effective charge separation of the electron–hole pair by the injection of conduction‐band electrons from the CdS‐ to the Au‐nanoparticles. Two other configurations involving electrostatically stabilized bipyridinium‐crosslinked Au/CdS or CdS/Au nanoparticle arrays were assembled on the Au/quartz crystal. The photocurrent quantum yields in the two systems are φ = 10 % and φ = 5 %, respectively. The photocurrents in control systems that include electrostatically bridged Au/CdS or CdS/Au nanoparticles by oligocationic units that lack electron‐acceptor units are substantially lower than the values observed in the analogous bipyridinium‐bridged systems. The enhanced photocurrents in the bipyridinium‐crosslinked systems is attributed to the stepwise electron transfer of conduction‐band electrons to the Au‐nanoparticles by the bipyridinium relay bridge, a process that stabilizes the electron–hole pair against recombination and leads to effective charge separation.     

MOCVD生长薄膜材料制作半导体可饱和吸收镜

介绍了当前国际上流行的用半导体可饱和吸收镜来对固体激光器、光纤激光器和半导体激光器进行被动锁模的方法,阐述了半导体可饱和吸收镜用来作为被动锁模吸收体的原理,并介绍了如何利用金属有机气相淀积(MOCVD)技术生长各种波长激光器所需要的半导体可饱和吸收镜.     

砂岩酸化中水化硅沉淀的影响因素分析

讨论了砂岩酸化中产生水化硅沉淀的反应机理。使高岭土与1.0%HF和多种配比的HCl HF在不同温度(20-90℃)反应不同时间(10-300分钟),用等离子吸收光谱法(ICP)测定酸液中可溶性硅的浓度(mg/L),取某时段测定值的减小量为该时段水化硅沉淀生成量,讨论了多种因素的影响,得到了如下结果和结论。反应温度越高,则高岭土与HF之间的反应越快,形成水化硅沉淀的时间越短,最终生成的沉淀量越大;在HF中加入HCl(使用土酸体系)、减小土酸中HF质量分数、加大土酸中HCl、HF质量分数比,均可使生成沉淀时间延后,使最终生成沉淀量减少。60℃时300分钟沉淀量,在1.0%HF、5.0%HCl 1.0%HF、9.0%HCl 1.0%HF中分别为482、321、201mg/L。提出了在酸化设计与施工中可以采取的6条简便易行的减少水化硅沉淀量的措施。图4表1参6。     

MATLAB在红外可视化分析中的应用

MATLAB是一个操作简捷、功能强大的数学辅助软件，在红外专业的可视化分析中具有很大的应用空间。介绍了MATLAB在黑体辐射理论、探测器器件分析中的具体使用。     

A Built-in Self-Test Scheme with Diagnostics Support for Embedded SRAM

In this paper we propose a novel built-in self-test (BIST) design for embedded SRAM cores. Our contribution includes a compact and efficient BIST circuit with diagnosis support and an automatic diagnostic system. The diagnosis module of our BIST circuit can capture the error syndromes as well as fault locations for the purposes of repair and fault/failure analysis. In addition, our design provides programmability for custom March algorithms with lower hardware cost. The combination of the on-line programming mode and diagnostic system dramatically reduces the effort in design debugging and yield enhancement. We have designed and implemented test chips with our BIST design. Experimental results show that the area overhead of the proposed BIST design is only 2.4% for a 128 KB SRAM, and 0.65% for a 2 MB one.     

窄禁带半磁半导体Hg_(1-x)Mn_xTe的磁化强度

本文报道用提拉法测量Hg_(1-x)Mn_xTe单晶磁化强度的实验结果.在低温1.5K-30K范图内,磁场强度为0-7万高斯下,测量了不同组分x=0.06,0.08,0.12,0.16的Hg_(1-x)Mn_xTe磁化强度与组分,温度和磁场强度的关系.采用分子场近似模型,用类布里渊函数,最小二乘法对实验结果进行了拟合和分析.结果表明在本文x值范围内,理论与实验符合较好,证实了锰离子间存在强的反铁磁交换耦合.     

The corrosion behavior of sputter-deposited aluminum-tungsten alloys

Thin films on aluminum-tungsten alloys were prepared by co-deposition of pure aluminum and pure tungsten, each sputtered by an independently controlled magnetron source, on glass and sapphire substrates. Completely amorphous films were obtained in the Al₈₀W₂₀-Al₆₇W₃₃ composition range. Passivity and corrosion behavior of amorphous Al-W alloys were investigated in 1 M deaerated hydrochloric acid solution using polarization and impedance spectroscopy measurements and have been correlated with the properties of pure alloy components. Tungsten and sputter-deposited Al-W thin films are inherently passive materials while aluminum undergoes pitting corrosion in hydrochloric acid solution. The passive film formed at the OCP on each alloy possesses excellent electric and dielectric properties comparable to those of the isolating film on tungsten. The absolute impedance increases with increasing tungsten content in the alloy. According to electrochemical polarization measurements, alloying Al with W in solid solution significantly enhances the material's resistance to pitting corrosion by shifting the breakdown potential above 2000 mV (Al₆₇W₃₃) and lowering the corrosion rate at the OCP by more than two orders of magnitude. The most likely mechanism explaining the passivity of amorphous Al-W alloys, the Solute Vacancy Interaction Model (SVIM), involves the formation of complexes between highly oxidized solute atoms (W⁺⁶) and mobile cation vacancies, which restrict the transport of Cl⁻ through the oxide film and inhibit its breakdown in hydrochloric acid solution. The role that film stress relaxation effects and microscopic defects in amorphous Al-W films, of the some composition, and deposited on various substrates play in their corrosion resistance is discussed.     

Synthesis, Characterization, and Formation Process of Na-X Zeolite from Coal Fly Ash

Using the SiO₂ and Al₂O₃ components of the amorphous phase in coal fly ash (Fa), Fa was converted to Na-X zeolites in NaOH-NaAlO₂ solutions by stirring at 35°C for 72 hr and then aging at 85°C for a given period. The molar ratio SiO₂/Al₂O₃ of the starting materials was controlled from 2.0 to 13.2. The resulting materials were characterized by various means. Increasing the SiO₂/Al₂O₃ ratio of the starting material increased the degree of crystallinity of faujasite, exhibiting a maximum at SiO₂/Al₂O₃ = 8.0. The faujasite formed was identified as Na-X zeolite with Si/Al = 1.20. The amorphous phase in Fa was dissolved during the stirring to form a precursor of zeolite, such as amorphous aluminosilicate. The Na-X zeolite was formed by aging for 24 hr, and the degree of crystallinity of this material was increased with the increasing aging period. The cation exchange capacity and specific surface area were increased with the increasing degree of crystallinity of the Na-X zeolites.     

Study of impurity induced modifications in amorphous N-type (GeSe3·5)100−x Bi x using high pressure technique

The technique of high pressure is utilized to study the carrier transport behaviour in doped and undoped bulk amorphous (GeSe_3·5)_100−x Bi _x (x=0, 2, 4, 10) down to liquid nitrogen temperature to observe impurity induced modifications in amorphous semiconductors. It is observed that pressure induced effects in lightly doped (2 at % Bi) and heavily doped (x=4, 10) semiconductors are markedly different. Results are discussed in view of the incorporation behaviour of the bismuth impurity.