溶胶-凝胶法制备铜锌锡硫材料的研究进展

四元硫化物铜锌锡硫(CZTS)是一种新型薄膜太阳电池材料,具有锌黄锡矿结构,呈p型导电性,带隙约为1.5eV,光学吸收系数高于10~4cm~(-1),这些特性与太阳光谱相匹配。基于上述原因,CZTS薄膜是一种有望能低成本、可规模化开发利用的新型薄膜太阳电池材料。简要阐述了CZTS性质及其薄膜太阳能电池的器件结构,详细介绍了溶胶-凝胶方法制备CZTS薄膜及其相应器件效率的研究进展。最后,总结了此方法制备CZTS薄膜及其相关电池性能难以突破的关键技术问题,并提出了有效的改进措施,对CZTS薄膜太阳电池未来的研究进行了展望。     

硅烷偶联剂表面改性玄武岩纤维增强复合材料研究进展

表面改性是增强玄武岩纤维与基体材料之间结合性能的关键。综述了硅烷偶联剂表面改性以及酸、碱刻蚀,等离子处理辅助协同硅烷偶联剂表面改性玄武岩纤维的研究进展,介绍了硅烷偶联剂表面改性玄武岩纤维在聚合物基复合材料中的应用,并对发展趋势进行了展望,同时分析了硅烷偶联剂表面改性玄武岩纤维当前存在的问题。     

力电多场鼓包法测定PZT铁电薄膜的横向压电系数

为表征Pb(Zr_(0.52)Ti_(0.48))O_3(PZT)薄膜的横向压电性能,以纯力场鼓包测试模型和铁电薄膜材料压电方程为基础,推导了PZT铁电薄膜的力电耦合鼓包本构模型。采用溶胶-凝胶法制备了PZT铁电薄膜,并通过化学腐蚀法获得PZT薄膜鼓包样品。在外加电压为0~14V的条件下进行鼓包测试。结果表明,在纯力场作用下,PZT薄膜的弹性模量和残余应力分别为91.9GPa和36.2MPa;随着电压从2V变化到14V,PZT薄膜的横向压电系数d31从-28.9pm/V变化到-45.8pm/V。本工作所发展的力电耦合鼓包测试技术及力电耦合鼓包本构模型为评价铁电薄膜材料的横向压电性能提供了一种有效的分析方法。     

合成介质对PEDOT催化染料敏化太阳电池光阴极性能的影响

采用聚3,4-乙烯二氧噻吩(PEDOT)/FTO为对电极,研究了合成介质对循环伏安法电聚合制备的PEDOT/FTO对电极性能的影响。通过SEM、CV、EIS、Tafel曲线,并首次采用SECM方法对所制备的对电极的电催化性能进行了表征。结果表明:在LiClO4水溶液和1-丁基-3-甲基四氟硼酸盐离子液体(IL)中制备的光阴极具有良好的电催化性能。J-V测试曲线表明,在LiClO4水溶液和IL中制备的光阴极所组装的DSSC器件的光电转化效率分别达6.4%和6.6%,接近于同等条件下以Pt对电极构建的DSSC器件的光电转化效率。     

Ni-金刚石复合涂层的结构优化及基础磨削性能

采用电沉积技术在304不锈钢基体上制备了Ni-金刚石复合涂层。通过金刚石掺入量、加厚镀时间优化了金刚石复合涂层结构,利用球-盘式摩擦磨损试验仪研究了优化后的金刚石复合涂层对不同材料偶件(GCr15、SiC、304不锈钢)的磨削性能。结果表明:金刚石掺入量为1.5g/L时,金刚石上砂均匀且密集;加厚镀15min时,金刚石埋入率约为2/3,附着强度较好,适合磨削加工;GCr15、SiC、304不锈钢3种材料偶件的磨损体积依次减小,分别为:0.353 76mm~3、0.315 90 mm~3、0.194 01 mm~3,金刚石复合涂层对GCr15有较好的磨削性能;金刚石复合涂层磨削GCr15、SiC、304不锈钢均发生了磨粒磨损,此外,GCr15还发生了微弱的化学磨损,不锈钢发生了较明显的化学磨损和粘着磨损。     

钙钛矿太阳能电池空穴传输材料的研究进展

钙钛矿太阳能电池具有工艺简单、可弯曲、应用前景广阔等优点。从2009年出现起,至今其效率从3.8%提高到了22%以上,引起了研究者的广泛关注。介绍了钙钛矿太阳能电池的基本结构和工作原理,概述了钙钛矿太阳能电池空穴传输材料的研究进展,着重介绍了无机空穴传输材料的研究进展。最后展望了钙钛矿太阳能电池未来的发展与商业化应用。     

Experimental investigations on nanogrinding of RB-SiC wafers

Nanogrinding experiments are performed to investigate the processing characteristics and material removal mechanism of reaction-bonded silicon carbide (RB-SiC) wafers on an ultraprecision grinder using the cup wheel. #120, #600 diamond wheels are used as coarse and semifinished grinding wheels, while #2000 and #12000 diamond wheels are selected as fine and finish grinding wheels, respectively. The experimental results indicate that an ultrasmooth surface with roughness value R_a less than 3?nm and groove depth about 5?nm can be achieved using a diamond wheel whose mesh size exceeds 2000. In addition, R_a less than 1?nm and groove depth about 2?nm will be obtained with a #12000 diamond wheel. The present study reveals the feasibility of ultraprecision grinding RB-SiC materials in the ductile regime and provides technological insights into nanogrinding of hard materials with an ultrasmooth surface.     

Interfacial Passivation of the p‐Doped Hole‐Transporting Layer Using General Insulating Polymers for High‐Performance Inverted Perovskite Solar Cells

Organic–inorganic lead halide perovskite solar cells (PVSCs), as a competing technology with traditional inorganic solar cells, have now realized a high power conversion efficiency (PCE) of 22.1%. In PVSCs, interfacial carrier recombination is one of the dominant energy‐loss mechanisms, which also results in the simultaneous loss of potential efficiency. In this work, for planar inverted PVSCs, the carrier recombination is dominated by the dopant concentration in the p‐doped hole transport layers (HTLs), since the F4‐TCNQ dopant induces more charge traps and electronic transmission channels, thus leading to a decrease in open‐circuit voltages (V_OC). This issue is efficiently overcome by inserting a thin insulating polymer layer (poly(methyl methacrylate) or polystyrene) as a passivation layer with an appropriate thickness, which allows for increases in the V_OC without significantly sacrificing the fill factor. It is believed that the passivation layer attributes to the passivation of interfacial recombination and the suppression of current leakage at the perovskite/HTL interface. By manipulating this interfacial passivation technique, a high PCE of 20.3% is achieved without hysteresis. Consequently, this versatile interfacial passivation methodology is highly useful for further improving the performance of planar inverted PVSCs.     

引入扰动补偿的多电机滑模协同控制研究

目的 解决多电机协同控制时容易受到非线性和外界扰动等不定因素的影响。方法 基于多电机偏差耦合控制结构,与引入扰动补偿的混合非奇异终端滑模变结构控制相结合,并与传统PI(Proportional Integral)调节器控制效果做仿真对比。结果 本文所提控制算法通过计算机仿真软件进行验证分析,该算法能够使得电机在启动时效果较好,转速误差在受到扰动时效果优于传统PI控制约8.50%;电机转矩在受到扰动后控制效果更加理想,几乎不存在迟滞时间就能达到新的负载转矩值;在受到负载扰动时转速误差波动较小,优于传统PI控制约8.83%。结论 通过计算机仿真验证得出,引入扰动补偿后的混合非奇异终端滑模变结构控制系统的响应时间和收敛速度、控制性能和鲁棒性都要优于传统PI控制的。