Controlling thickness to tune performance of high-mobility transparent conducting films deposited from Ga-doped ZnO ceramic target

Structure modification has been found to tune significantly the transparent-conducting performance, especially mobility and conductivity of hydrogenated Ga-doped ZnO (HGZO) films. The strong correlation between film thickness and mobility of the films is revealed. The mobility increases quickly with increasing the thickness from 350 to 900 nm, and then tends to be saturated at further thicknesses. A higher mobility than 50 cm²/Vs can be achieved, which is an extra-high value for polycrystalline ZnO films deposited by using the sputtering technique. The thickness-dependent mobility originates from scatterings on grain boundaries and dislocation-induced defects controlled by thin-film growth. Based on the Volmer-Weber model, an expansion model is built up to describe the thickness-dependent crystal growth of the HGZO films, especially at the thick films. As a result, the 800 nm-thick HGZO film obtains the highest performance with high mobility of 51.5 cm²/Vs, low resistivity of 5.3 × 10^?4 Ωcm, and good transmittance of 83.3 %.     

悬浮于润滑油中的颗粒运动分析及其对油膜压力的影响

对含有固体颗粒的局部润滑流域建立格子Boltzmann(LBM)离散模型,分析固体颗粒在润滑油中的动力学特性;考虑颗粒形状的影响,推导计入单个固体颗粒运动的润滑方程,并分析得到油膜压力;将油膜流动特性与颗粒动力学计算相结合,分析不同形状的颗粒运动对于油膜压力的影响。分析发现,当颗粒进入润滑油后,经过很短的瞬时颗粒就会达到一个瞬态稳定的状态,无论颗粒在油膜厚度方向的初始位置位于两壁面之间的中线上侧还是下侧,颗粒都会向中线位置移动;当颗粒速度为0时对于油膜压力的影响较大,随着颗粒速度逐渐增大,颗粒对于油膜压力的影响逐渐减小;当颗粒的宽度在油膜厚度方向相同时,长宽比越大的颗粒对于油膜压力的影响也越大;当颗粒长轴相等时,颗粒在油膜厚度方向的宽度越大,则其对于油膜压力的影响也越大,即颗粒形状对于油膜流动的阻碍能力越强,则其对于油膜压力的影响越大。     

Influences of Ga concentration on performances of CuInGaSe2 cells fabricated by sputtering-based method with ceramic quaternary target

Copper Indium Gallium Selenide (Cu(In,Ga)Se₂, CIGSe) absorbers with different Ga contents were prepared by sputtering CIGSe ceramic targets and post-annealing. CIGSe solar cell devices were fabricated with other functional layers. The device performances and absorber properties were investigated. Increasing Ga content led to an increase in V_OC and a decrease in J_SC. Ga was supposed to diffuse towards back contact during the annealing process. The best performance was obtained as the ratio of Ga/(In + Ga) reaches 0.32 with the efficiency of 13.8% and a V_OC of 537 mV.     

The effect of growth conditions,point defects and hydrogen on the electronic structure and properties of p-type (Al,N) codoped ZnO: A first principles study

The effects of point defects, hydrogen, and growth conditions on the electronic structure and properties of the (Al,N) codoped p-type ZnO have been investigated using the first principles method. The obtained results showed that the Al_Zn–N_O–V_Zn complex is a shallow acceptor that can play an important role in achieving the p-type conductivity in the (Al,N) codoped ZnO films. Our results showed also that the electrical conductivity type in the (Al,N) codoped ZnO films strongly depends on the donor/acceptor concentrations ratio. The codoped ZnO films prepared under both Zn-rich and O-rich growth conditions with a donors/acceptors ratio of 1:2 have a p-type conductivity, while those prepared with a ratio of 1:1 cannot be p-type unless if they are prepared under O-rich conditions. The achieved p-type quality depends also on the used nitrogen doping source. To prepare p-type ZnO film of high quality using the (Al,N) codoping method, the use of NO or NO₂ is recommended. The presence of donor defects such as oxygen vacancies and hydrogen will significantly affect the electronic properties of the (Al,N) codoped ZnO films, and if the concentration of these defects in the sample is high enough, the material can be easily converted to n-type.     

Facile growth of novel morphology correlated Ag/Co-doped ZnO nanowire/flake-like composites for superior photoelectrochemical water splitting activity

In this paper, novel morphology correlation between silver nanowires (AgNWs) and cobalt (Co)-doped ZnO (Co-ZnO) flake-like thin films (nanowire/flake-like) has been proposed for enhanced photoelectrochemical (PEC) water splitting activity. Here in, high-quality AgNWs/Co-ZnO heterostructures enabled superior visible light water splitting activity compared to the pure ZnO and AgNWs/ZnO. To address the strategic effect of AgNWs coupling and transition metal (Co-2?at%) doping into the ZnO host lattice, we have carried out the X-ray diffraction, field emission scanning microscopy, X-ray photoelectron spectroscopy, UV–Vis transmittance, water contact angle and PEC analyses. In this way, PEC water splitting activity was mainly examined by linear sweep voltammetry (I-V), amperometric I-t and photoconversion efficiency (η) studies. The experimental results provide clear evidence of morphology correlation between AgNWs and Co-ZnO flake-like structures for strong visible light absorption. Specifically, AgNWs/Co-ZnO composites exhibited significant enhancement in the photocurrent density (7.0?×?10^?4 A/cm²) than AgNWs/ZnO (3.2?×?10^?4 A/cm²) and pure ZnO (1.5?×?10^?6 A/cm²). As a result, detailed AgNWs/Co-ZnO geometry has great potential for photoconversion efficiency (0.73%). In a word, the merits of controllable AgNWs/Co-ZnO heterostructure are proposed to improve the visible light harvesting and charge carrier generation for energy conversion devices.     

离子液体水热法辅助合成稀土Ce掺杂ZnO纳米材料的制备及其应用研究

以1-甲基咪唑和氯代正丁烷为原料,合成1-丁基-3-甲基咪唑氯盐离子液体;以醋酸锌[Zn(Ac)2]、硫酸锌(ZnSO4)和氯化锌(ZnCl2)为锌源,在1-丁基-3-甲基咪唑氯盐离子液体和丙氨酸体系中与硝酸铈反应,经水热合成法制备得到Ce掺杂的纳米ZnO。采用扫描电子显微镜(SEM)、紫外-可见光吸收光谱(UV-Vis)、X射线衍射仪(XRD)、X射线光电子能谱分析(XPS)和红外光谱(FT-IR)对产品进行表征。以亚甲基蓝(MB)为目标降解物,采用UV-Vis检测,考察了Ce掺杂的纳米ZnO的光催化活性。研究表明,焙烧温度对光催化的晶体结构和光催化活性产生较大的影响;2%Ce/ZnO、焙烧温度为500℃、催化时间为30 min、亚甲基蓝用量0.05 g、pH值为10时降解率可达99.5%以上。     

Effect of stoichiometry and Cu-substitution on the phase structure and hydrogen storage properties of Ml-Mg-Ni-based alloys

To improve the electrochemical properties of rare-earth–Mg–Ni-based hydrogen storage alloys, the effects of stoichiometry and Cu-substitution on the phase structure and thermodynamic properties of the ...     

Optimization of Gallium concentration to improve the performance of ZnO nanopowders for nanophotonic applications

This study reports the effects of gallium concentration on the properties of doped zinc oxide nanopowders. Both pure and gallium doped zinc oxide (GZO) nanoparticles were prepared via a simple and effective sol-gel method. The structural, morphological and optical properties of synthesized GZO nanopowders were investigated using different characterization methods such as X-ray diffraction, Raman, X-ray photoelectron spectroscopy, Fourier transform infrared spectrometer, UV–Vis diffuse reflectance spectroscopy, Transmission electron microscopy, Photoluminescence spectroscopy, X-ray and ion-beam-induced luminescence (IBIL) measurements. Firstly, in the presence of Ga ions in the host the purity of synthesized sample was evaluated by X-ray diffraction analysis. X-ray photoelectron spectroscopy confirmed the presence of bonding states of Zn, O, and Ga on the surface of powders. Raman spectroscopy analysis showed that the increase of Ga content upper than 1 at.% leads to an increase in the number of defects in the ZnO lattice. Field emission scanning electron microscopy (FESEM) confirmed that the uniform integration of spherical and hexagonal rod shape particles can be found in the doped samples. According to FESEM images, the particle size of prepared nanopowders increased from 101 to 200 nm by increasing in the Ga doping concentration. The photoluminescence, X-ray and ion beam induced luminescence results of the pure and doped ZnO powders revealed novel blue-green emission band from 400 up to 550 nm at room temperature. Optical and structural studies confirmed the optimized Ga concentration is 1 at.%.     

Large increase of Curie temperature in (110)-oriented La0.7Sr0.3MnO3 films

From the perspectives of scientific researches and practical applications, it is desirable to explore high operating temperature ferromagnetic films. The effect of biaxial strain on magnetic properties of (110)-oriented La_0.7Sr_0.3MnO₃ films was studied. High quality La_0.7Sr_0.3MnO₃ films were grown on (110)-oriented perovskite single crystal substrates using pulsed laser deposition, varying substrate-induced misfit strains from ??2.27–0.75%. A remarkable enhancement of Curie temperature has been achieved for (110)-oriented La_0.7Sr_0.3MnO₃ films clamped with small misfit strains (i.e., grown on LAST (110)). The enhanced Curie temperature of (110)-oriented La_0.7Sr_0.3MnO₃ films could be attributed to the misfit strain between the films and the underlying substrates and may have technological implication for applications at high temperature environments.