一款紧凑增强型可变阻抗电磁带隙结构

基于传统AI-EBG结构,提出了一种小尺寸的增强型电磁带隙结构,实现了从0.5~9.4 GHz的宽频带-40 dB噪声抑制深度,且下截止频率减少到数百MHz,可有效抑制多层PCB板间地弹噪声。文中同时研究了EBG结构在高速电路应用时的信号完整性问题,使用差分信号方案可改善信号完整性。     

Cost-minimization analysis of a working vacation queue with N-policy and server breakdowns

This paper investigates the N-policy M/M/1 queueing system with working vacation and server breakdowns. As soon as the system becomes empty, the server begins a working vacation. The server works at a lower service rate rather than completely stopping service during a vacation period. The server may break down with different breakdown rates during the idle, working vacation, and normal busy periods. It is assumed that service times, vacation times, and repair times are all exponentially distributed. We analyze this queueing model as a quasi-birth–death process. Furthermore, the equilibrium condition of the system is derived for the steady state. Using the matrix-geometric method, we find the matrix-form expressions for the stationary probability distribution of the number of customers in the system and system performance measures. The expected cost function per unit time is constructed to determine the optimal values of the system decision variables, including the threshold N and mean service rates. We employ the particle swarm optimization algorithm to solve the optimization problem. Finally, numerical results are provided, and an application example is given to demonstrate the applicability of the queueing model.     

Atomistic insight into the hydration and proton conducting mechanisms of the cobalt doped Ruddlesden-Popper structure Sr3Fe2O7-δ

Sr₃Fe₂O_7-δ (SFO) with two-layer Ruddlesden-Popper (R–P) structure has recently been proved to be a promising material for the single phase cathode in proton conducting solid oxide fuel cells (P–SOFCs). To investigate the hydration reactions and proton conducting mechanisms of SFO and cobalt doped SFO (SFCO), both bulk and surface properties were calculated. We conclude that R–P structures have advantages in P–SOFCs. The unique Sr–O–M layer can facilitate the hydration process. Although in Sr–O–F and Sr–O–N layers, it is difficult for the formation and migration of oxygen vacancies, protons are most stable. Furthermore, cobalt doping can not only improve the electronic conductivity but also enhance surface properties of SFCO. The easily exposed Co–Fe–O surface can also facilitate the hydration reactions on the surface. Our work could give an informative insight into the relationships among the doped elements, the R–P structures, the hydration process and the proton conducting properties.     

A Distribution‐freeCUSUMChart for Monitoring Variability of AutocorrelatedProcesses

We present a distribution‐free tabular cumulative sum chart for monitoring the variability of an autocorrelated process. A quantity known as the asymptotic variance parameter is employed as a measure of the variability, and a distribution‐free tabular cumulative sum chart is applied to variance estimates calculated from batches of nonoverlapping samples. The proposed chart is applicable to a stationary process with a general marginal distribution and a general autocorrelation structure. It also determines control limits analytically without trial‐and‐error simulations. The performance of the proposed chart is tested on stationary processes with both normal and nonnormal marginals with various autocorrelation structures. Copyright © 2014 John Wiley & Sons, Ltd.     

一类两性分枝过程条件均值增长率的极限性质

本文主要研究随机环境中配对依赖人口数两性 Galton-Watson 分枝过程的条件均值增长率的极限性质．利用上可加函数的性质，得到配对单元平均增长率的极限性质和该过程条件均值的上界和下界．文中给出了关于过程条件均值增长率的两个序列，利用配对单元平均增长率的性质，获得了这两个序列的极限性质．随机环境中配对依赖人口数两性分枝过程比较复杂，本文的结论推广了现有的研究成果．     

煤化工酸水汽提装置运行存在问题及解决方法

本文简述了酸水汽提工艺的发展概况和技术进展,详细介绍了煤化工酸水汽提装置实际运行中存在的几类主要问题,并提出切实可行的解决措施,具有一定的借鉴意义。     

Compiler compatible 5.66 Mb/mm2 8T 1R1W register file in 14 nm FinFET technology

1-read/1-write (1R1W) register file (RF) is a popular memory configuration in modern feature rich SoCs requiring significant amount of embedded memory. A memory compiler is constructed using the 8T RF bitcell spanning a range of instances from 32 b to 72 Kb. An 8T low-leakage bitcell of 0.106 μm² is used in a 14 nm FinFET technology with a 70 nm contacted gate pitch for high-density (HD) two-port (TP) RF memory compiler which achieves 5.66 Mb/mm² array density for a 72 Kb array which is the highest reported density in 14 nm FinFET technology. The density improvement is achieved by using techniques such as leaf-cell optimization (eliminating transistors), better architectural planning, top level connectivity through leaf-cell abutment and minimizing the number of unique leaf-cells. These techniques are fully compatible with memory compiler usage over the required span. Leakage power is minimized by using power-switches without degrading the density mentioned above. Self-induced supply voltage collapse technique is applied for write and a four stack static keeper is used for read Vmin improvement. Fabricated test chips using 14 nm process have demonstrated 2.33 GHz performance at 1.1 V/25 °C operation. Overall V_min of 550 mV is achieved with this design at 25 °C. The inbuilt power-switch improves leakage power by 12x in simulation. Approximately 8% die area of a leading 14 nm SoC in commercialization is occupied by these compiled RF instances.     

重力坝模型的尺寸效应

利用两个不同比尺预制缝重力坝模型的试验成果，以有限元富集技术进行非线性断裂分析，建立了极限承载力和长度比尺的确定性尺寸效应公式。混凝土重力坝的断裂尺寸效应满足指数衰减关系，用三次指数衰减公式可以准确地预测原型的极限承载力。断裂过程区的相对长度是引起模型试验尺寸效应的主要原因。数值计算结果表明，断裂过程区相对长度不仅是与材料有关的参数，能否充分发展还取决于结构尺寸和几何形状；断裂过程区相对长度的尺寸效应不同于统计尺寸效应和断裂参数尺寸效应，具有尺寸范围效应。断裂过程区相对长度在小试件、大试件和相对无穷大试件的发展程度不同。     

以IBAC为核心处理洗浴废水的试验研究

根据洗浴废水的水质特征,采用原水→混凝沉淀-过滤→固定化生物活性炭(Immobilized Biological Activated Carbon,IBAC)→微滤膜(MF)→UV消毒→出水的工艺流程.混凝沉淀-过滤物化预处理单元可以有效地减少洗浴废水中的各类污染物.IBAC生化处理单元,实现有机污染物、LAS、浴臭等有效去除,是保证出水合格的根本措施.微滤膜发挥物理截留作用、UV消毒杀死细菌和总大肠菌群.出水水质达到＜城市供水水质标准＞(CJ/T 206-2005).