Structural and electrical properties of lead free ceramic: Ba(La1/2Nb1/2)O3

Abstract

Abstract

Lead free perovskite Ba(La_1/2Nb_1/2)O₃ was prepared by conventional ceramic fabrication technique at 1375°C for 7?h in air atmosphere. The crystal symmetry, space group and unit cell dimensions were estimated using Rietveld analysis. X-ray diffraction analysis indicated the formation of a single phase monoclinic structure with space group P2/m. Energy dispersive X-ray analysis and scanning electron microscopy studies were carried to study the quality and purity of the compound. Permittivity data showed low temperature coefficient of capacitance (T _CC = 11%) up to 100°C. The circuit model fittings were carried out using the impedance data to find the correlation between the response of real system and idealised model electrical circuit. Complex impedance analyses suggested the dielectric relaxation to be of non-Debye type. The correlated barrier hopping model was employed to successfully explain the mechanism of charge transport in Ba(La_1/2Nb_1/2)O₃. The AC conductivity data were used to evaluate the density of states at Fermi level, minimum hopping length and apparent activation energy.     

Isotopic separation of silicon atoms by atomic mirror

The isotopic separation of silicon by an atomic mirror has been demonstrated numerically, by which each silicon isotope encounters a different dipole force depending on the frequency detuning due to the different frequencies resonant to the silicon isotopes. It was found that the atomic mirror, which comprised a wave guide structure designed for the enhancement of evanescent waves at 252 nm, allows us to discriminate ²⁹Si from the other isotopes.     

Relationship between Ba atom emission and electrode temperature in a low-pressure fluorescent lamp

A relationship between emission characteristics of Ba atom as an emitter material and temperature distributions of an electrode in a fluorescent lamp is described, which is measured by using laser-induced fluorescence and black-body radiation method, respectively. In a virgin lamp, a hot spot observed at the electrode edge connected to the power supply is the main source of Ba atom emission. In a long-term-used lamp, it is shown that Ba atom emission, thermionic electron emission in cathode half-cycle and electron collection in anode half-cycle are most active on the hot spot appearing on the center of the electrode.     

Ba0.65Sr0.35TiO3陶瓷材料的制备及介电特性研究

采用溶胶－凝胶工艺制备了Ba0.65Sr0.35TiO3粉体，并利用微波烧结技术对粉体进行了合成和烧结，研究分析了样品的介电特性，并与传统制备工艺获得的样品进行了性能比较。实验结果表明，获得的Ba0.65Sr0.35TiO3粉体颗粒较细，其合成温度和烧结成瓷温度都较传统工艺有大幅度降低，分别为900和1310℃；可以获得晶粒尺寸在1μm以内的陶瓷；随晶粒的减小，材料的相对介电常数变化不大，而介电损耗大大降低。     

Ba(Mg1/3Ta2/3)O3热障涂层的制备及抗热震性能研究

本文以BaCO₃、MgO、Ta₂O₅为原料,采用固相反应法合成了Ba(Mg_1/3Ta_2/3)O₃(简称BMT)陶瓷粉末,利用大气等离子喷涂技术制备了BMT/YSZ双层陶瓷涂层。利用XRD、SEM和金相显微镜检测了BMT粉体及涂层的物相组成和显微结构。采用水淬法考核了涂层的抗热震性能。结果表明：1450℃下煅烧4h可合成出具有复合钙钛矿结构的BMT粉末,粉末具有良好的高温相结构稳定性。等离子喷涂制备的BMT/YSZ涂层组织致密,涂层系统中各界面结合紧密。涂层在室温至1150℃间热震9次后发生片状剥落,剥落位置位于BMT层间,BMT材料低的断裂韧性和第二相Ba₃Ta₅O₁₅的存在是导致涂层失效的主要原因。     

掺钇(Ba,Sr,Ca)TiO_3纳米粉体及细晶陶瓷的制备与性能

采用sol-gel法制备了Y3+掺杂Ba0.90Sr0.08Ca0.02TiO3(BSCT)纳米粉体及细晶陶瓷。通过TG-DTG、XRD、SEM和TEM对样品结构及形貌进行了表征,并测试了陶瓷的介电性能。研究表明,Y3+掺杂BSCT纳米粉体主要为立方相BaTiO3,烧结后陶瓷晶粒尺寸在0.68~2.24μm可控,Y3+掺杂可以抑制陶瓷晶粒的生长,使陶瓷的tC向低温方向移动。随Y3+掺杂量的增大,陶瓷的介电温谱εr-t趋于平缓,当x(Y3+)为7.0%时,陶瓷的室温εr大幅度提高到9 176。     

B位非化学计量比对0.6BCN-0.4BZN陶瓷性能的影响

采用传统固相反应法,制备了Ba(Co0.6Zn0.4)1/3Nb2/3O3(0.6BCN-0.4BZN)微波介质陶瓷。系统研究了Ba(Co0.6Zn0.4)(1/3+x)Nb2/3O3陶瓷中B位(Zn,Co)离子的非化学计量比(x=-0.015,-0.009,-0.003,0,0.003,0.009,0.015)对该微波介质陶瓷性能的影响。结果表明:少量的B位离子缺量,可以促进烧结的致密化。x为-0.009时所制陶瓷密度最大,达到理论密度的99%以上。在1400℃下烧结20h,可以获得εr=35.35,Q.f=40787GHz(f=5.180GHz),τf=-3×10-6/℃的0.6BCN-0.4BZN陶瓷。     

蓝绿双色可调荧光粉Ba2Ca(BO3)2:Ce3+,Eu2+,Na+的发光性能和能量传递研究

用高温固相法制备了蓝绿双色可调荧光粉Ba2Ca(BO3)2:Ce3+,Eu2+,Na+,并研究了其发光特性。在345 nm近紫外光激发下发射的分别以390和410 nm为主峰的蓝光发射带对应于Ce3+的5d→2F5/2和5d→2F7/2跃迁,峰值位于525 nm的绿光发射带归属于Eu2+的4f65d1→4f7跃迁。通过Dexter共振能量传递理论和Reisfeld近似计算得到2种离子之间存在四极矩-四极矩能量传递。当Ce3+和Eu2+的摩尔浓度分别为5%和4%时,样品的色坐标位置落在蓝绿色区域,并可以通过改变基质中Ce3+和Eu2+的摩尔比来调节荧光粉的色坐标。Ba2Ca(BO3)2:Ce3+,Eu2+,Na+是一种适用于近紫外芯片的新型双色可调谐白光LED用荧光粉。     

Growth and microstructure of Ba β-alumina films by laser chemical vapor deposition

Ba β-alumina films were prepared by laser chemical vapor deposition. Mostly single-phase Ba β-alumina films were obtained at 1125–1200 K and for an Al/Ba molar ratio of 12.4–16.6. BaAl₂O₄ and α-Al₂O₃ were codeposited with Ba β-alumina under Ba- and Al-rich conditions, respectively. The Ba β-alumina films consisted of hexagonal grains, and the (1 1 0)-oriented Ba β-alumina films had a fin-like columnar structure. The highest deposition rate reached 120 μm h^?1 at around 1200 K. A thin layer of Ba-rich superstructure was formed on the surface of the (1 1 0)-oriented columnar grains.     

The preparation and microwave properties of Ba3ZnZCo2-ZFe24O41/SiO2 microcrystalline glass ceramics by citrate sol-gel process

A series of Ba₃Zn_ZCo_2-ZFe₂₄O₄₁/SiO₂ microcrystalline glass ceramics with Z=0.0,0.4,0.8 and 1.2 were prepared by citrate sol-gel process. The result showed that Ba₃Zn_ZCo_2-ZFe₂₄O₄₁ hexferrite crystallites could be obtained by this process at 1200 °C in the system of BaO-Fe₂O₃-CoO-ZnO-SiO₂. The complex dielectric constant and complex permeability of Ba₃Zn_ZCo_2-ZFe₂₄O₄₁/SiO₂ microcrystalline glass ceramics calcined at different temperature were measured in the range of 200MHz-6 GHz by transmission/reflection coaxial line method. The complex dielectric constant and dielectric loss exhibited insignificant variety in the whole range of measuring frequencies for all samples. The real part of the permeability decreased as the measuring frequency increasing, and calcining temperature had a clear influence on the value of μ′ for Ba₃Zn_ZCo_2-ZFe₂₄O₄₁/SiO₂ microcrystalline glass ceramics, and so did the content of Zn²⁺ and Co²⁺. The natural resonance phenomenon was observed in μ′′ spectra for all the Ba₃Zn_ZCo_2-ZFe₂₄O₄₁/SiO₂ microcrystalline glass ceramics. The substitution of Zn²⁺ ion and annealing temperature closely affect the resonance frequency, the more the Zn²⁺ ion, the higher the annealing temperature and the lower the resonance frequency. Received: 23 July 2001 / Accepted: 24 July 2001