Formation of ST12 phase Ge nanoparticles in ZnO thin films

In this work, we focus on the Ge nanoparticles (Ge-np) embedded ZnO multilayered thin films. Effects of reactive and nonreactive growth of ZnO layers on the rapid thermal annealing (RTA) induced formation of Ge-np have been specifically investigated. The samples were deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively on Si substrates. As-prepared thin film samples have been exposed to an ex-situ RTA at 600 °C for 60 s under forming gas atmosphere. Structural characterizations have been performed by X-ray Diffraction (XRD), Raman scattering, Secondary Ion Mass Spectroscopy (SIMS), and Scanning Electron Microscopy (SEM) techniques. It has been realized that reactive or nonreactive growth of ZnO layers significantly influences the morphology of the ZnO: Ge samples, most prominently the crystal structure of Ge-np. XRD and Raman analysis have revealed that while reactive growth results in a mixture of diamond cubic (DC) and simple tetragonal (ST12) Ge-np, nonreactive growth leads to the formation of only DC Ge-np upon RTA process. Formation of ST12 Ge-np has been discussed based on structural differences due to reactive and nonreactive growth of ZnO embedding layer.     

硼氢化钠对滑轮用铸钢板化学镀Ni-B合金薄膜性能的影响

在滑轮用铸钢板上化学镀Ni-B合金薄膜,并研究了硼氢化钠的质量浓度对化学镀Ni-B合金薄膜性能的影响。结果表明:适当增加硼氢化钠的质量浓度,有利于增大化学镀Ni-B合金薄膜的厚度及硼的质量分数,从而提高化学镀Ni-B合金薄膜的硬度。当硼氢化钠的质量浓度大于1.2 g/L时,硼氢化钠的水解速率加快及剧烈的析氢反应,导致化学镀Ni-B合金薄膜的厚度及硬度有所降低。当硼氢化钠的质量浓度为1.2 g/L时,化学镀Ni-B合金薄膜表面"胞状"颗粒均匀、致密,摩擦因数和磨损率最低,具有最佳的耐磨性。     

Preparation and characterization of Fe‐Tetranitro phthalocyanine/polyurethane blends

In this article, Fe‐Tetranitro phthalocyanine (Fe‐TNPc)/polyurethane (PU) blends were prepared by solution blending. The mechanical properties of the samples were studied by tensile tests. The results showed that the tensile strength and the elongation at break of the samples increased with increasing Fe‐TNPc content. The improved mechanical properties for the samples containing Fe‐TNPc was attributed to the increased microphase separation degree of PU, which was further investigated by dynamic mechanical analysis (DMA) and Fourier transform infrared analysis. The lower T_g of the soft segments and the higher T_g of the hard segments for the samples containing Fe‐TNPc indicated an increase of microphase separation degree of PU. The increased hydrogen bonded carbonyl groups in the samples with increasing Fe‐TNPc content also proved the conclusion. Quantitative evaluation of the interaction between Fe‐TNPc and PU was also investigated by analyzing the physical crosslinking density of the samples. The results indicated that the physical crosslinking density of the samples increased with increasing Fe‐TNPc content. The antibacterial properties of the samples were investigated. The results showed that the percentage bacterial inactivation toward S. aureus and E. coli of the samples were 98.9% and 90.9%, respectively, when Fe‐TNPc was added to 1%. © 2014 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2015 , 132, 41284.     

不同制样方法对直流辉光放电质谱法测定氮化硼中27种杂质元素的影响

讨论了3种制样方法对直流辉光放电质谱法(dc-GDMS)检测氮化硼中的Na、Mg、Al、Si等27种杂质元素的影响。3种制样方法分别如下所示:方法1,直接把氮化硼压在铟薄片上;方法2,把氮化硼压在铟薄片上后,再盖上一层铟罩;方法3,把压碎后的氮化硼放在针状钽勺上。在优化的辉光放电参数下对比了3种不同制样方法对基体信号强度的影响。试验表明:在方法1中,当氮化硼尺寸约为3mm×3mm,厚度小于1mm时,基体¹¹B的信号可达1.8×10⁷ cps;在方法2中,选择铟孔大小合适的铟罩,基体¹¹B的信号可达1.0×10⁷ cps;方法3获得基体信号强度比方法1、方法2高一个数量级。大部分元素在中分辨率下可获得较好的结果,而对于在高分辨率下也较难分离的元素,可选择丰度较低的同位素在中分辨率下进行测定,如Ge选择⁷⁰Ge⁺,Se选择⁸²Se⁺,Cd选择¹¹¹Cd⁺,Sn选择¹¹⁹Sn⁺,Ag选择¹⁰⁹Ag⁺,Pt选择¹⁹⁴Pt⁺。氮化硼中的杂质元素含量可通过样品片中待测元素含量减去来自于铟薄片或钽勺中该元素贡献的含量来计算获得。将样品平行测定5次,相对标准偏差均在20%以内。对于Al、Si、Ti等元素的测定,3种制样方法的测定结果基本一致;方法1、方法2中检测到的In含量较大,使得铟中的Ni、Cu对氮化硼的测定值影响较大;方法3由于钽中Fe、Cu的贡献导致氮化硼中Fe、Cu的检测值较大,但方法3获得的基体信号强度大,可降低部分元素的检出限,如Cr、Mn、Ga、Ge等。综上所述,方法3为优选方法。     

Durable,Sensitive, and Wide‐Range Wearable Pressure Sensors Based on Wavy‐Structured Flexible Conductive Composite Film

Flexible pressure sensors have potential applications in human motion monitoring and electronic skins. To satisfy the practical applications, pressure sensors with a high sensitivity, a low detection limit, a broad response range, and an excellent stability are highly needed. Here, a piezoresistive pressure sensor based on wavy‐structured single‐walled carbon nanotube/graphite flake/thermoplastic polyurethane (SWCNT/GF/TPU) composite film is fabricated by a prestretching process. Due to the random wavy structure, high conductivity, and good flexibility, the prepared sensor displays a low detection limit of 2 Pa, a wide sensing range of 0–60 kPa, and a high sensitivity of 5.49 kPa^?1 for 0–50 Pa. Furthermore, the sensor shows a remarkable repeatability of over 1.1 × 10⁴, 9.0 × 10³, and 2.0 × 10³ pressure loading/unloading cycles at 50 Pa, 500 Pa, and 30 kPa, respectively, and a fast responsibility of 100–150 ms of loading response time and 400–600 ms of relaxation time. Therefore, the pressure sensor is successfully adopted to monitor both the large‐scale human activities (e.g., walk and jump) and the small‐scale signals (e.g., wrist pulse). Furthermore, a sensor array is assembled to map the weight and shape of an object, indicating its various potential applications including human–machine interactions, human health monitoring, and other wearable electronics.     

High-Tg porous polyimide films with low dielectric constant derived from spiro-(adamantane-2,9′(2′,7′-diamino)-fluorene)

Porous polyimide (PI) films with low dielectric constants and excellent thermal properties have been a pressing demand for the next generation of high-performance, miniature, and ultrathin microelectronic devices. A series of novel porous PI films containing fluorenyl-adamantane groups were prepared successfully via thermolysis of poly(ethylene glycol) (PEG) added in the PI matrix. The cross-sectional morphologies of porous PI films showed closed pores with diameters ranging from 135 to 158 nm, which were uniform and regular in shape without interconnectivity. These porous PI films exhibited excellent thermal properties with a glass-transition temperature at 376 °C whereas the 5% weight loss temperature in air excess of 405 °C due to enhanced rigidity afforded by fluorenyl-adamantane groups. Accompanied by thermolysis content of PEG increasing from 0 to 20 wt %, the density of porous PI films decreased, and the corresponding porosity grew significantly from 0 to 11.48%. Depending on porosity, the dielectric constant and dielectric loss of porous PI films significantly declined from 2.89 to 2.37 and from 0.050 to 0.021, respectively. These excellent properties benefit the as-prepared porous PI films for application as interlayer dielectrics, integrated circuit chips, or multichip modules in microelectronic fields. © 2018 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2019 , 136, 47313.     

Nanostructured titanium nitride for highly sensitive localized surface plasmon resonance biosensing

Titanium nitride (TiN) as an alternative plasmonic ceramic material with superb properties including high hardness, outstanding corrosion resistance and excellent biocompatibility, has exhibited great potential for optical biochemical sensing applications. By sputtering about 35 nm–50 nm TiN on glass (f-TiN), the surface was found to provide sensing capability toward NaCl solution through the phenomenon of surface plasmon resonance. When the TiN film of about 27 nm–50 nm in thickness was sputtered onto a roughened glass surface (R–TiN), the sensing capability was improved. This was further improved when holes at nanoscale were created in the TiN film of about 19 nm–27 nm in thickness (NH–TiN). The roughened surface and nanohole patterns provided confinement of surface plasmons and significantly improved the sensitivity toward the local refractive index changes. In detail, the calculated refractive index resolution (RIR) of the optimal NH–TiN sensors for NaCl was found to be 9.5 × 10⁻⁸ refractive index unit (RIU), which had outperformed the f-TiN and R–TiN sensors. For biosensing, the optimized NH–TiN sensor was found to be capable to detect both small and large biomolecules, i.e. biotin (molecular weight of 244.3 g/mol) and human IgG (160,000 g/mol), in a label-free manner. Especially, the NH–TiN sensor significantly improved sensitivity in detecting small molecules due to the localized plasmonic confinement of electromagnetic field. Combining with the excellent mechanical and durability properties of TiN, the proposed NH–TiN can be a strong candidate for plasmonic biosensing applications.     

Annealing effects on structural and electrical properties of fluorinated amorphous carbon films deposited by plasma enhanced chemical vapor deposition

The annealing effects on the structural and electrical properties of fluorinated amorphous carbon (a-C:F) thin films prepared from C₆F₆ and Ar plasma are investigated in a N₂ environment at 200 mTorr. The a-C:F films deposited at room temperature are thermally stable up to 250 °C, but as the annealing temperature is increased beyond 300 °C, the fluorine incorporation in the film is reduced, and the degree of crosslinking and graphitization in the film appears to be enhanced. At the annealing temperature of 250 °C, the chemical bond structures of the film are unchanged noticeably, but the interface trapped charges between the film and the silicon substrate are reduced significantly. The increased annealing temperature contributes the decrease of both the interface charges and the effective charge density in the a-C:F film. Higher self-bias voltage is shown to reduce the charge density in the film.     

Silicon for thin-film transistors

We are standing at the beginning of the industrialization of flexible thin-film transistor (TFT) backplanes. The two important research directions for the TFTs are (i) processability on flexible substrates and (ii) sufficient field-effect mobilities of electrons and holes to support complementary metal insulator semiconductor operation. The most important group of TFT capable semiconductors are the several modifications of silicon films: amorphous, nanocrystalline and microcrystalline. We summarize their TFT properties and their compatibility with foil substrate materials.     

梁112块沙四段薄互层低渗透油藏水力压裂工艺优化

梁112块沙四段薄互层油藏属于典型的高压、特低渗透油藏,具有油层多、单层薄、砂岩与泥岩交互等特点。常规压裂效果不理想。通过建立单井模型,确定了压裂应以增加裂缝的长度为主;利用FracproPT软件模拟优化加砂规模;根据油层物性特点优化射孔方案;配套应用粉陶降滤和控制缝高等技术优化了水力压裂工艺。2004年共对11口井实施了大型水力压裂,平均加砂量为42.5m3,平均加砂强度为1.6m3/m,累积增产原油达2.75×104t。