有互感和电源的电容耦合电路的量子涨落

通过正则变换和幺正变换的方法研究了有互感和电源存在的情况下的介观电容耦合电路的量子涨落。结果表明电荷和电流的量子涨落与电源无关。当电路元件确定时，如果L1／L2的值很大或很小，耦合对涨落的影响很大。互感从有到无的过程中，回路1中电流的涨落和回路中2中电荷的涨落有明显的变化。换句话说，互感的有无对涨落的大小起着举足轻重的作用。     

高斜效率高功率850nm氧化限制型垂直腔面发射激光器

报道了MOCVD生长的高性能850nm氧化限制型垂直腔面发射激光器.研制出的氧化直径为9μm的激光器25℃时的斜效率和阈值电流分别为0.82mW/mA和2.59mA,激光器在23mA时输出16mW最大光功率.氧化直径为5μm的激光器25℃时的最小阈值电流为570μA,其最大饱和光功率为5.5mW.     

半导体量子点中极化子的有效质量

研究了半导体量子点中极化子的有效质量.采用改进的线性组合算符方法,导出在电子-体纵光学声子(LO)强耦合时抛物量子点中极化子的振动频率、相互作用能和有效质量随受限强度和电子-声子耦合强度的变化.对RbCl晶体量子点进行了数值计算,结果表明,量子点受限越强,半导体量子点中强耦合极化子的振动频率和有效质量就越大;极化子的相互作用能随受限强度的增加先急剧增加,当达到极值后,随受限强度的增加而急剧减少     

Science in High Magnetic Fields: What Could Be Learned?

High magnetic fields are one of the most powerful tools available to scientists for the study, modification and control of matter. This includes the knowledge on correlations effects, interaction mechanisms, structural information and understanding of mesoscopic effects. In this context, a review of recent scientific achievements at the Grenoble High Magnetic Laboratory is given to illustrate, on specific examples, the power of the Magnetic Field probe.     

Curie Temperatures of III–V Diluted Magnetic Semiconductors Calculated from First-Principles in Mean Field Approximation

Electronic structure and ferromagnetism in III–V compound-based diluted magnetic semiconductors (DMS) are investigated based on first-principles calculations by using the Korringa-Kohn-Rostoker method combined with the coherent-potential-approximation. The stability of the ferromagnetic phase in GaN-, GaAs-, GaP-, GaSb-based DMS is investigated systematically. The calculations show that 3d-impurities from the first-half of the transition metal series favor the ferromagnetic state, while impurities from the latter-half of the series exhibit spin-glass behavior. This chemical trend in the magnetism is explained by the double exchange mechanism taking the local symmetry at the impurity gap states into account. Curie temperatures of GaAs- and GaN-based DMS are estimated by using the Heisenberg model in a mean field approximation with the parameters calculated from first-principles. It is suggested that room-temperature ferromagnetism can be realized in these systems.     

脉冲式半导体激光器准直光学系统的设计

根据具体的探测环境和探测精度,通过理论分析,提出了脉冲式半导体激光器准直光束的单透镜设计方法和柱面透镜的设计方法,并且给出了具体的设计参数。可以获得高斯光束的准直发散角为1.48mrad;高斯光束的腰粗为0.325mm。     

Implementing Qubits with Superconducting Integrated Circuits

Superconducting qubits are solid state electrical circuits fabricated using techniques borrowed from conventional integrated circuits. They are based on the Josephson tunnel junction, the only non-dissipative, strongly non-linear circuit element available at low temperature. In contrast to microscopic entities such as spins or atoms, they tend to be well coupled to other circuits, which make them appealling from the point of view of readout and gate implementation. Very recently, new designs of superconducting qubits based on multi-junction circuits have solved the problem of isolation from unwanted extrinsic electromagnetic perturbations. We discuss in this review how qubit decoherence is affected by the intrinsic noise of the junction and what can be done to improve it. PACS: 03.67.-a, 03.65.Yz, 85.25.-j, 85.35.Gv     

用CMOS工艺实现VSR光电集成接收机的途径

介绍了10Gbit／s速率的甚短距离光传输系统VSR(Very Short Reach)中的接收机。分析了几种有希望用于VSR系统的CMOS工艺兼容的光电探测器。提出用CMOS电路实现VSR光电集成(OEIC)接收机的可能性和实现方法。     

SCB火工品的研究与发展

文章评述了半导体桥火工品问世以来的研究成果与发展趋势。主要内容有半导体桥作用机理、半导体桥的结构与封装、半导体桥火工品的特点、半导体桥火工品的应用、半导体桥火工品的研究和发展趋势。