Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.     

湿H2S环境中金属材料腐蚀的研究

介绍了在湿H2S环境中金属材料的腐蚀试验标准、方法和手段并重点强调了在H2S试验过程中常遇到的一些问题的处理方法.最后,指出了应加强H2S腐蚀的基础性和系统性研究的研究方向.     

多变量系统敏感性及鲁棒性综合最优的H∞解耦设计方法

本文利用H∞设计理论提出了一种多变量系统敏感性及鲁棒性综合最优的解耦设计方 法,证明了单变量系统所能达到的最优敏感性及鲁棒性指标值仅由被控对象右半平面的零极 点决定,而与左半平面的零极点无关.另外,本文对谱分解及模型匹配问题的求解算法作了改 进,给出了一个算例.     

氨合成塔出口氨含量偏低原因分析及对策

阐述UHDE合成塔运行现状 ,分析氨净值达不到设计值的原因 ,提出相应的解决措施     

微波等离子体化学气相沉积的 a-Si∶H 性能研究

本文着重对微波等离子体化学气相沉积法高速沉积的 a-Si∶H 膜的物理性能进行评价研究.测量了沉积膜的光电性能、暗电导激活能、光禁带宽度、光吸收特性、沉积膜中悬键态密度以及氢含量等,并讨论沉积条件对膜性能的影响.结果表明,在沉积速率高达30～90(?)/s 情况下,膜的光电导(光照强度10~5Lux)与暗电导比值可达10~3～10~5,暗电导率从10~(-3)到10~(-11)((?)cm)~(-1),其激活能在0.23～0.88eV 之间(0～200℃温度范围内),光禁带宽度为1.40～2.20eV,氢含量约为2～20%.     

熔敷金属扩散氢逸出特性研究

采用酒精法测量扩散氢 ,研究了焊条熔敷金属扩散氢含量以及在测氢过程中扩散氢逸出量与逸出时间的关系 (逸出特性 )。研究结果表明 ,熔敷金属扩散氢逸出特性受扩散氢含量、焊道数、熔敷金属化学成分和表面状态等多种因素的影响。熔敷金属扩散氢 (HDo)可以分为快速逸出扩散氢 (HDq)和慢速逸出扩散氢(HDs)两部分     

H.323话机主叫方物理地址定位的研究

本文提出了一套应、救急系统对H．323话机发起的呼叫定位其主叫物理地址的方案。方案分两部分内容：H．323网关对主叫物理地址的获取以及SS7信令对该地址的传输,本文详细阐述述了为实现这两部分内容而对相关协议流程所作的修改与补充。     

一种新型背面接触式H~+-ISFET

简要地介绍了氢离子敏场效应晶体管(H~+-ISFET)的基本结构和工作原理,提出了一种新型背面接触式H~+-ISFET。对该结构在版图、工艺设计中的有关问题,进行了探讨。最后指出:它在pH值的测量中有较好的实用价值。     

基于BCM3540的高清晰度数字电视机顶盒的硬件设计

介绍一种基于BCM3540的高清晰度数字电视机顶盒的硬件设计方案,该方案采用1块主芯片BCM3540及1块协处理器BCM7411,能够处理MPEG-2高清、标清以及H.264高清、标清信号,可以直接支持PCMCIA接口实现机卡分离,并具有32位PCI总线,可以很方便地进行功能扩展。     

Synthesis and structural characterization of methacrylic acid/octadecyl acrylate‐graft‐poly(methylhydrosiloxane) by hydrosilylation

Methylmethacrylate (MMA) and octadecyl acrylate (OA) were grafted to poly(methylhydrosiloxane) (PMHS) by hydrosilylation, respectively, with hexachloroplatinic acid as catalyst, and the former was further hydrolyzed to prepare methacrylic acid (MAA)‐graft‐PMHS under the alkaline condition. Through orthogonal experiment, main factors affecting the graft reaction between OA and PMHS were discussed and arranged in a decreasing order according to their abilities of the effect on the hydrosilylation of OA with PMHS: catalyst dosage, reaction temperature, reaction time, material ratio, and solvent dosage. It was found that the hydrosilylation of OA with PMHS was easier to that of MMA with PMHS. Under optimal conditions, the grafting ratios of MMA with PMHS and OA with PMHS reached about 90 and 95%, respectively. FTIR and ¹H NMR spectra indicated that the hydrosilylation reactions followed the Markovnikov's rule and played a strong preference toward β‐1,2‐addition. The test of contact angle indicated that surface energy of a system was mainly dependent on the polar groups. The surface energy of OA‐graft‐PMHS (35.07 mN/m) was similar to those of PMHS (35.62 mN/m) and polyoctadecyl acrylate (36.57 mN/m), and lower than that of MAA‐graft‐PMHS (43.50 mN/m). © 2007 Wiley Periodicals, Inc. J Appl Polym Sci 2008