毛/涤纱分散/酸性(媒染)染料一浴法筒子染色工艺

毛/涤纱分散/酸性(媒染)染料一浴法筒子染色工艺,在100℃条件下能满足毛、涤两种纤维同时上染,染色产品具有着色深浓鲜艳,色泽一致,各项牢度符合要求,对纤维无损伤等优点,从而缩短生产时间,降低成本,提高经济效益。     

数值地形图的生成及其水文地貌特征评价

数值地形图(DEM)是利用地理信息系统(GIS)进行流域水文模拟的基础, 其精度直接影响模拟结果在没有现成的数值地形图时, 应用人员往往利用传统的地形图来生成它. 本文分别采用Arc/Info地理信息系统软件提供的哈奇逊法和不规则三角网五次插值法, 对一个实验流域的高程取样点进行插值, 生成了4种不同的数值地形图, 从凹洼分布、流域界定、河网提取、地面坡度和地形指数、以及地面径流汇成等方面, 对它们的水文地貌精度进行了比较. 结果表明, 两种方法都能生成由高程点群所反映的地形, 然而由于哈奇逊法能够结合流域的河网结构及其具有物理基础的水文地貌加强法来处理凹洼问题, 因此大大地提高了其所生成的流域数值地形图水文地貌特征精度.     

非晶Sm5Fe74.3Nb1.5Si11.7B4.5C2.5Cu0.5合金经预退火后的晶化动力学的DTA研究

研究了非晶Sm5Fe74.3Nb1.5Si11.7B4.5C2.5Cu0.5合金经400℃，保温10min预退火后的晶化动力学。结果表明；该合金的晶化相为α-Fe固溶体和Sm2Fe17Cx金属间化合物，两相的晶化表观激活能分别为557KJ/mol和514KJ/mol，当晶化体积分数为60%时，α-Fe相的晶化激活能达极大值；Sm2Fe17Cx相晶化激活能则随其晶化体积分数的增加而逐渐减小。     

黑土土壤质量演变初探I：不同开垦年限黑土主要质量指标演变规律

根据土壤质量的定义和研究方法 ,对黑土的主要质量指标演变规律进行初步研究。结果表明 :黑土的颗粒组成受开垦历史影响的程度较小 ,其质地没有发生显著变化 ;黑土的有机质、全氮、全硫和全磷随着黑土开垦时间的增加而不断降低 ;速效磷随黑土开垦时间的增加有增高的趋势。经过统计分析 ,黑土中粉砂(0.05～0.002mm)含量与细砂(0.25～0.05mm)和粘粒(<0.002mm)含量具有相关性,黑土有机质含量与全氮、全硫、全磷和速效钾具有明显的正相关。因此 ,初步认为黑土中粉粒和有机质含量可以作为土壤物理和养分方面的质量指标     

改性玻纤增强尼龙610,1010塑料

研究了采用(准)中粘度级尼龙做基体树脂,加入成核剂改善尼龙的结晶过程,提高结晶速率和初始熔融温度;添加光、热氧稳定剂,防止尼龙在成型加工和使用过程中产生降解与老化,提高塑料制品的质量和减少性能的分散性;采用合理的工艺条件,确保添加剂的均匀分散与减少玻纤的磨损,得到适于军工、航空和机电等领域需要的高性能的受力结构工程塑料。     

交联型聚醚聚氨酯的表征、力学性能及其碱金属盐络合物的导电性能

采用三羟甲基丙烷（ＴＭＰ）作交联剂与聚乙二醇（ＰＥＯ－１５４０）和甲苯二异氰酸酯（ＴＤＩ）反应，得到了具有较好力学性能的交联型聚醚聚氨酯（ＰＥＵ），该聚合物与ＬｉＣｌＯ４的结合物具有较高的室温电导率（σ３０℃＝１．８７×１０￣（－４）Ｓ／ｃｍ）。采用全反射红外光谱（ＡＴＲ－ＩＲ）对聚合物的结构进行了表征。对聚合物的组成、不同ＴＤＩ类型及络合盐浓度对聚合物力学性能及其络合物电导率的影响进行了探讨。低度交联聚合物的络合物，其电导率与温度的关系符合建立在自由体积理论上的ＶＴＦ方程，表明络合物中离子的传导主要是在无定形区域进行，与自由体积有关。     

1100℃以上高温连铸板坯表面缺陷的模拟在线无损检测

高温状态下连铸板坯表面缺陷的在线无损检测在现代化的连铸坯热送－直轧工艺中对于保证铸坯的质量有着极其重要的意义。本文介绍了连铸坯高温探伤技术和相应的试验装置。采用涡流方法成功地模拟了１１００℃以上铸坯表面缺陷的动态检测，所用探头及检测设备均可在高温状态下长时间连续工作，能检测出深度为１．５ｍｍ，宽度为０．３ｍｍ，长为１０ｍｍ的表面缺陷，并能有效地抑制铸坯表面振动斑痕所产生的噪声影响。借助于计算机信号     

Pd-Ge contact to n-GaAs with the TiW diffusion barrier

Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10⁻⁶ Ω-cm² for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρ_c increasing to 2.94 × 10⁻⁶Ω-cm² and for an aging at 410°C for 40 h with its ρ_c increasing to 1.38 × 10⁻⁵ Ω-cm².     

Defects in molecular beam epitaxial GaAs grown at low temperatures

We have utilized a variable energy positron beam and infrared transmission spectroscopy to study defects in GaAs epilayers grown at low temperatures (LT-GaAs) by molecular beam epitaxy. We have measured the Doppler broadening of the positron-electron annihilation gamma ray spectra as a function of positron implantation energy. From these measurements, we have obtained results for the depth profiles of Ga monovacancies in unannealed LT-GaAs and Ga monovacancies and arsenic cluster related defects in annealed LT-GaAs. We have also studied the effects of the Si impurities in annealed LT-GaAs. The infrared transmission measurements on unannealed LT-GaAs furnish a broad defect band, related to As antisites, centered at 0.370 eV below the conduction band.     

Atmospheric and low pressure shadow masked MOVPE growth of InGaAs(P)/InP and (In)GaAs/(Al)GaAs heterostructures and quantum wells

The shadow masked growth technique is presented as a tool to achieve thickness and bandgap variations laterally over the substrate during metalorganic vapor phase epitaxy. Lateral thickness and bandgap variations are very important for the fabrication of photonic integrated circuits, where several passive and active optical components need to be integrated on the same substrate. Several aspects of the shadow masked growth are characterized for InP based materials as well as for GaAs based materials. Thickness reductions are studied as a function of the mask dimensions, the reactor pressure, the orientation of the masked channels and the undercutting of the mask. The thickness reduction is strongly influenced by the mask dimensions and the reactor pressure, while the influence of the orientation of the channels and the amount of undercutting is only significant for narrow mask windows. During shadow masked growth, there are not only thickness variations but also compositional variations. Therefore, we studied the changes in In/Ga and As/P ratios for InGaAs and InGaAsP layers. It appears that mainly the In/Ga-ratio is responsible for compositional changes and that the As/P-ratio remains unchanged during shadow masked growth.