Si衬底上横向外延GaN材料的微结构和光学性质的研究

用氢化物气相外延 (HVPE)方法在Si(III)衬底上成功横向外延生长出晶体质量较好的GaN薄膜材料。透射电子显微镜 (TEM )的研究结果表明 ,横向外延区域GaN的位错密度明显减小。由于SiO2 掩膜腐蚀角的不同 (分别为 90°和 6 6°) ,导致了横向外延GaN材料一些独特的微观形貌。微区拉曼光谱由数百条拉曼散射曲线组成 ,每一条曲线有三个振动模 ,分别对应Si振动模式 (5 2 0cm- 1) ,E2 模式 (5 6 6cm- 1)和E1(LO)模式(732cm- 1)。在垂直条纹方向 ,峰位和峰宽没有明显的变化 ,而峰强约 5 μm会发生周期性变化     

成品油销售企业导入顾客满意战略之浅见

从中国石化股份有限公司浙江温岭石油分公司所面临的市场态势和企业的经营状况出发，考虑企业的长足发展，阐述了实施顾客满意（CS）战略的紧迫性，指出必须实施CS战略，必须要在组织落实、宣传发动、具体措施及奖惩分明的激励机制等各方面采取得力措施。     

迫零对Turbo码的性能影响

从距离谱的角度对迫零在Turbo码中的作用进行了理论分析。通过仿真，研究了迫零对Turbo码性能的影响。仿真结果表明，Turbo码编码器迫零处理有助于改善Turbo码的性能。     

3G中的QoS结构及无线资源分配策略

在3G（第3代移动通信系统）中，为了给不同类型的业务提供不同级别的端到端QoS，网络资源必须进行合理分配。QoS和资源分配是密不可分的，而无线资源分配显得尤为重要。文中提出了UMTS的QoS结构，分3部分对空中接口部分的QoS（即无线资源分配策略问题）进行了讨论：首先提出了一种RRA算法，接着讨论了W－CDMA和TD－CDMA系统的无线资源分配问题，最后讨论了下行链路及上行链路的呼叫允许控制（CAC）。     

数字放大器—3G无线基站的助推器

为了构筑第三代无线网络,人们需要对现有基础设施进行彻底改造,包括网络的发射基站。配置在无线基站中的新型数字控制功率放大器能够改善频谱利用率和功率效率,从而提高系统容量。PMC-Sierra公司的数字控制功率放大器采用了数字校正信号处理器(DCSP)以及自适应控制处理器和补偿估值器(ACPCE),该放大器可改善无线基础设施的可靠性,同时降低系统成本、规模及复杂性。     

The Effect of Polymer Optoelectronic Properties on the Performance of Multilayer Hybrid Polymer/TiO2 Solar Cells

We report a study of the effects of polymer optoelectronic properties on the performance of photovoltaic devices consisting of nanocrystalline TiO₂ and a conjugated polymer. Three different poly(2‐methoxy‐5‐(2′‐ethylhexoxy)‐1,4‐phenylenevinylene) (MEH‐PPV)‐based polymers and a fluorene–bithiophene copolymer are compared. We use photoluminescence quenching, time‐of‐flight mobility measurements, and optical spectroscopy to characterize the exciton‐transport, charge‐transport, and light‐harvesting properties, respectively, of the polymers, and correlate these material properties with photovoltaic‐device performance. We find that photocurrent is primarily limited by the photogeneration rate and by the quality of the interfaces, rather than by hole transport in the polymer. We have also studied the photovoltaic performance of these TiO₂/polymer devices as a function of the fabrication route and device design. Including a dip‐coating step before spin‐coating the polymer leads to excellent polymer penetration into highly structured TiO₂ networks, as was confirmed through transient optical measurements of the photoinduced charge‐transfer yield and recombination kinetics. Device performance is further improved for all material combinations studied, by introducing a layer of poly(ethylene dioxythiophene) (PEDOT) doped with poly(styrene sulfonic acid) (PSS) under the top contact. Optimized devices incorporating the additional dip‐coated and PEDOT:PSS layers produced a short‐circuit current density of about 1 mA cm^–2, a fill factor of 0.50, and an open‐circuit voltage of 0.86 V under simulated AM 1.5 illumination (100 mW cm^–2, 1 sun). The corresponding power conversion efficiency under 1 sun was ≥ 0.4 %.     

Head-to-head polymers: 33. Bromination of cis-1,4-polybutadiene to head-to-head poly(vinyl bromide)

Cis-1,4-polybutadiene (PB) in a 0.5% solution of a solvent mixture of dichloromethane and 1,2-dibromoethane or tetrahydrofuran was quantitatively brominated with elemental bromine at 0°C under careful exclusion of oxygen to head-to-head poly(vinyl bromide). Partially brominated PB has a structure of random or block sequences of butadiene units in the polymer depending on the bromination solvent but shows no stereospecificity in the CHBrCHBr-dyads. Partially brominated PB with block structure showed a microphase-separated morphology over a wide range of composition. Microphase separation is less pronounced for the more random structure of butadiene units. I.r and ¹³C n.m.r. spectroscopy of the partially brominated PB was used to follow the progress of the bromination.     

Melting and crystallization behaviour of elastoplastic semicrystalline copolymers: poly(ether ester)

The melting and crystallization behaviour of an elastoplastic semi-crystalline poly(etherester) has been studied by differential scanning calorimetry. The shape of the melting endotherm is strongly dependent on heating rate and annealing time and results from the sum of simultaneous melting and crystallization phenomena. Samples prepared by different techniques, i.e. by solvent evaporation or by melt extrusion, behave very differently owing to specific crystal morphologies. By applying the Hoffman-Weeks plot, the equilibrium melting temperature has been extrapolated. The Avrami treatment allows the calculation of the index n and of the rate constant K from the isothermal kinetic data.     

ATM网络中CBR业务连接允许控制机制

该文提出了一种基于有限容量缓冲区下CBR业务信元丢失率和最小速率替换的线性近似连接允许控制机制，与原有的CAC机制相比，该文的CAC机制存在两个方面的改进：一方面，使用更合理、精确的CLR表达式，从而能够作出更为准确的连接允许判断：另一方面，能够提供服务质量服务。     

改进的用于半导体器件综合系统的遗传算法

本文对应用于器件综合系统的遗传算法GENOCOP进行了改进.将实数设计空间根据参数的工艺精度影响转换为整型空间,并加入适应性复合算子利用已经得到的点来扩展和开发准可行空间.使其保持有效搜索到可行解的特性的同时,在同等的算法设置下,提高了对可行空间的覆盖率(约2.87倍),可以帮助设计人员更有效的设计可工作的器件.