Optical and structural properties of MOVPE grown GaxIn1−xAs/InP strained multiple quantum well atructures

This paper presents a study of the structural and optical properties of strained GaInAs/ InP multiple quantum well (MQW) structures fabricated by LP-MOVPE. The composition of the Ga _x In_1−x As films ranged fromx = 0.17 tox = 1.0 and was determined by sputtered neutral mass spectrometry (SNMS) on thick layers. The structures of the MQW samples with well widths from 1.5 to 5 nm were investigated by high resolution x-ray diffraction (HR-XRD). Simulations of the diffraction patterns showed that transition layers of approximately 2 monolayer (ML) thickness with high lattice mismatch exist at the interfaces. Photoluminescence (PL) measurements indicate well widths of a multiple of a monolayer with local variations of one monolayer. The PL peak energies vary smoothly with the Ga concentration. These results were confirmed by optical absorption measurements.     

关于飞行力学的再思考

对多年来国内外有关飞行力学的发展过程、研究范畴、分类，以及问题表述方式等重新进行了一些考察和思考．从学术和实践的观点，对飞行力学的体系结构和问题表述方式等进行了讨论，并提出了个人的一些看法和建议．     

Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part I. Simulation Programs

The suitability of the semiconductor-device modeling program PC-1D for high-accuracy simulation of silicon photodiodes is discussed. A set of user interface programs optimized to support high-accuracy batch-mode operation of PC-1D for modeling the internal quantum efficiency of photodiodes is also described. The optimization includes correction for the dark current under reverse- and forward-bias conditions before calculating the quantum efficiency, and easy access to the highest numerical accuracy available from PC-1D, neither of which is conveniently available with PC-1D’s standard user interface.     

Finite elements in the analysis of pressure vessels and piping-a bibliography (1976–1996)

The paper gives a bibliographical review of the finite element methods (FEMs) applied for the analysis of pressure vessel structures/components and piping from the theoretical as well as practical points of view. The range of applications of FEMs in this area is wide and cannot be presented in a single paper; therefore the aim of this review is to give the reader an encyclopaedic view of the differnt possibilities that exist today for the finite element analysis in the fields of pressure vessels and piping. The bibliography at the end of the paper contains approximately 1900 references to papers, conference proceedings and theses/dissertations on the subject that were published in 1976–1996. These are classified in the following categories: linear and non-linear, static and dynamic, stress and deflection analysis; stability problems; thermal problems; fracture mechanics problems; contact problems; fluid-structure interaction problems; manufacturing of pipes and tubes; welded pipes and pressure vessel components; development of special finite elements for pressure vessels and pipes; finite element software; and other topics. Also finite element software, general purpose and special purpose codes, used for the analysis of pressure vessels and pipes are briefly discussed and presented.     

超微粒乳剂的制备及量子尺寸效应的研究

本文制备了四种不同粒度的超微粒AgBr照相乳剂,用X射线衍射技术对其粒子的大小进行了测定;观察到乳剂的紫外吸收峰随晶体颗粒的减小表现出逐渐蓝移;本文提出晶体表面的悬键的存在使得纳米晶体的平均键能升高,并对纳米AgBr乳剂的量子尺寸效应进行了解释。     

In_（0．2）Ga_（0．8）As／GaAs应变多量子阱结构的光调制反射和热调制反射谱的研究

对Ｉｎ（０．２）Ｇａ（０．８）Ａｓ／ＧａＡｓ应变多量子阱在７７Ｋ下的光调制反射谱（ＰＲ）和热调制反射谱（ＴＲ）进行了实验研究．对ＰＲ结果的线形拟合指认了应变多量子阱中子能级的跃迁，并与理论计算结果作了比较．实验对比确认ＰＲ中１１Ｈ、１３Ｈ等跃迁结构为非耦合态、具有电场调制机构的一阶微商性质．而１１Ｌ、３１Ｈ、２２Ｈ等跃迁结构为阶间耦合态，对这些隧穿耦合的低场调制产生三阶微商特性．     

激光器绝热啁啾对光纤通信系统传输特性的影响

通过理论分析、实验和计算机模拟得到：进行直接强度调制时，体块型DFB激光器的总微分量子效率（与多量子阱DFB激光器相比）过低，从而导致其绝热啁啾占激光器啁啾的主要部分；用于无再生中继距离较大的强度调制／直接检测（IM／DD）光纤通信系统时，色散效应将导致信号脉冲上升沿压缩，使系统误码率增加。据此建议：在无再生中继距离大于100～120km的常规单模光纤IM／DD系统中，应采用多量子阱激光器。     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

砼坝裂缝稳定性分析

通过比较线弹性断裂力学中的两种计算应力强度因子的方法，外推法和奇异单元法，得到相应的结论；并以某砼坝下游部位出现裂缝为例，分析在不利荷载作用下裂缝的稳定性。     

Cohesive stresses and size effect in quasi-brittle materials

A novel approach to the derivation of Bažant’s size effect law is presented. Contrarily to the original Lagrangian derivation which hinged on energetic consideration, a Newtonian approach based on local stress intensity factors is presented. Through this approach, it is shown that Bažant’s size effect law is the first (and dominant) term in a series expansion for the nominal stress. Furthermore, analytical expressions forB are derived for selected specimen geometries.