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991.
992.
Y. Nakamura Ichiro Tanaka N. Takeuchi S. Koshiba H. Sakaki 《Journal of Electronic Materials》1998,27(11):1240-1243
We studied morphology of GaAs surfaces and the transport properties of two-dimensional electron gas (2DEG) on vicinal (111)B
planes. Multi-atomic steps (MASs) are found on the vicinal (111)B facet grown by molecular beam epitaxy, which will affect
electron transport on the facet. We also studied how the morphology of GaAs epilayers on vicinal (111)B substrates depends
on growth conditions, especially on the As4 flux. The uniformity of MASs on the substrates have been improved and smooth surfaces were obtained when the GaAs was grown
with high As4 flux, providing step periodicity of 20 nm. The channel resistance of the 2DEG perpendicular to the MASs is reduced drastically
with this smooth morphology. These findings are valuable not only for fabricating quantum devices on the (111)B facets but
also those on the vicinal (111)B substrates. 相似文献
993.
本文研究了采用锁定放大相干检测技术的等离子体光发射谱检测系统。用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。分析了检测结果和刻蚀机理。 相似文献
994.
Xiang Lu S. Sundar Kumar Iyer Jin Lee Brian Doyle Zhineng Fan Paul K. Chu Chenming Hu Nathan W. Cheung 《Journal of Electronic Materials》1998,27(9):1059-1066
We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII)
for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high
cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation
of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous
buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO2 interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique
is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant
in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen
induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure
combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force
which is sufficient to overcome the silicon fracture resistance. 相似文献
995.
Measurements of the thermal diffusivity of thin films on substrate have been performed by the photoacoustic method. In order to examine the method we have built a new apparatus and proposed (1) a system calibration procedure using optically and thermally thick reference samples and (2) a data analysis procedure based on the RG (Rosencwaig and Gersho) theory. As a result of using a transparent photoacoustic cell, the systematic errors which are caused by stray light have been reduced. With this apparatus, measurements have been performed on platinum, titanium, and stainless steel (SUS304) thin foils (thickness form 50 to 100 µm) with three different liquid backing materials (water, glycerol, and ethyl alcohol). The reproducibility was within ±7% regardless of film thickness and substrate materials. 相似文献
996.
Thi Thi Nge Makiko Yamaguchi Naruhito Hori Akio Takemura Hirokuni Ono 《应用聚合物科学杂志》2002,83(5):1025-1035
Polyelectrolyte complex based on chitosan and acrylic acid monomer by photoinitiated free‐radical polymerization in the absence of crosslinker showed a large transition in swelling in response to changes in pH of surrounding medium. Their ability to swell arises from polyelectrolyte interactions and molecular structure of the complex. The main properties of interest that related to the molecular structure, swelling volumes, glass transition temperature, and elastic modulus of the complex were investigated. The effect of water content, the only variable in the sample component, played an important role in molecular structure of the complex and as a consequence, the extent of intermolecular linkage, especially amide bonds which in turn governed the degree of swelling of the polyelectrolyte complex in this study. The decreased degree of swelling and higher temperature shift of glass transition temperature was found with increased water content, whereas increased modulus of elasticity of dry complex was found in lower water content of synthesis component. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 83: 1025–1035, 2002 相似文献
997.
火工药剂与金属桥丝接触,在高温、高湿条件下贮存一定时间后两者是否相容,用电镜观察其金属表面的腐蚀形态(面积、深浅),以此来判断金属桥丝与火工药剂的相容性。 相似文献
998.
Yasuo Koide T. Kawakami Masanori Murakami N. Teraguchi Y. Tomomura A. Suzuki 《Journal of Electronic Materials》1998,27(6):772-775
Schottky barrier heights (SBHs) of a variety of metals (In, Cd, Nb, Ti, W, Cu, Ag, Au, Ni, Pt, and Se) contacting to p-ZnSe
grown by a molecular beam epitaxy method were determined by analyzing capacitance-voltage (C-V) and/or current density-voltage
(J-V) curves. The SBH values of the Au and Ni contacts were determined from intersections of straight lines of the C−2-V curves to be 1.23 and 1.13 eV, respectively. The J-V calculations provided a large SBH value of 1.2 ± 0.1 eV for a variety
of metals, indicating that the Fermi-level could be pinned at the contact interface. Reduction of the SBH values to a level
lower than 0.4 eV and/or increase of doping concentrations to a level higher than 1020 cm−3 are essential to obtain an ohmic contact with contact resistivity of around 10−3 Ω·cm2. 相似文献
999.
提出了一种新的铝液夹杂物快速检测方法。导出了该法的检测原理方程。分析并试验研究了影响检测重复性和分辨率的因素。试验选择了较好的检测参数,并获得了较好的检测结果。 相似文献
1000.
P. Kurpas A. Oster M. Weyers A. Rumberg K. Knorr W. Richter 《Journal of Electronic Materials》1997,26(10):1159-1163
Reflectance anisotropy spectroscopy (RAS) has been used to study As-by-P exchange during metalorganic vapor phase epitaxy.
The study focuses on the processes occurring during switching from GaAs to GaInP, especially the effect of purging PH3 over a GaAs surface. GaAsP/GaAs superlattices of different periodicity were grown and the P-content was determined by high-resolution
x-ray diffraction and correlated to the RAS spectra. From the temperature dependence of the P-content, an activation energy
of 0.56 eV was estimated for the incorporation mechanism. In addition to the insights into the processes at mixed group-V
heterointerfaces, our study demonstrates the reproducibility of RAS transients that thus can be used for process monitoring. 相似文献