Growth and characterization of laser-deposited Ag-doped YBa2Cu3O7−x thin films on bare sapphire

Microstructural and superconducting properties of YBa₂Cu₃O_7−x thin films grownin situ on bare sapphire by pulsed laser deposition using YBa₂Cu₃O_7−x targets doped with 7 and 10 wt% Ag have been studied. Ag-doped films grown at 730°C on sapphire have shown very significant improvement over the undoped YBa₂Cu₃O_7−x films grown under identical condition. A zero resistance temperature of 90 K and a critical current density of 1·2×10⁶ A/cm² at 77 K have been achieved on bare sapphire for the first time. Improved connectivity among grains and reduced reaction rate between the substrate and the film caused due to Ag in the film are suggested to be responsible for this greatly improved transport properties.     

Ag/TiO2纳米催化剂的制备及性能

采用溶胶-凝胶法制备了Ag/TiO₂光催化剂。通过X射线衍射(XRD)、场发射扫描电子显微镜(FE-SEM)、N₂吸附-脱附(BET)、透射电子显微镜(TEM)对产物进行了表征。以亚甲基蓝(MB)为降解物,考察了不同Ag含量和不同煅烧温度对样品的光催化性能影响。结果表明,掺杂Ag后,增大了样品的比表面积,800℃时,Ag的引入抑制了TiO₂锐钛矿向金红石相的转变,掺杂后TiO₂的光催化活性大大提高,在500℃煅烧温度下,当Ag的摩尔分数为1%时,在紫外光照射下,经过180min光催化实验,对MB的降解率达到90%.     

Ag掺杂SnSe化合物的制备及热电性能

SnSe是一种潜在的极具应用前景的热电材料。采用机械合金化结合放电等离子烧结的方法制备了Ag掺杂的Sn_1-xAg_xSe (0.005≤x≤0.03)多晶块体热电材料, 并借助XRD、SEM、电热输运测试系统研究了其物相组成、微结构与电热输运性能。XRD分析结果表明, 少量Ag(0.005≤x≤0.01)掺杂仍然能够成功制备出单相斜方结构SnSe化合物, 但随着Ag掺杂量的增加, 基体中出现SnAgSe₂第二相, 且第二相含量逐渐增加。掺杂Ag大幅度提高了载流子浓度, 从而使材料的综合电输运性能(功率因子)显著提高, 当Ag掺杂量x=0.02时, 功率因子提高至4.95×10^-4 W/(m·K²), 较未掺杂SnSe样品提高了36%。尽管掺杂样品的热导率均有小幅升高, 无量纲热电优值(ZT)仍获得一定改善。当Ag掺杂量x=0.02时, Sn_0.98Ag_0.02Se成分样品具有较高的热电优值, 并在823 K附近达到最高值0.82。     

Multi-colored type-I Ag-doped ZnCdS/ZnS core/shell quantum dots with intense emission

Although doped quantum dots (d-dots) with intense and tunable emission have been studied for long time, there are still great efforts to prepare new ones with promising characteristics. In the present work, we used a mild/effective strategy for preparing high quality and aqueous-soluble Ag:ZnCdS/ZnS core/shell quantum dots (QDs) with N-acetyl-l-cysteine as the capping agent. Through investigating the experimental variables, the impurity-related emission intensity of the as-prepared samples was optimized. The capability of the present work on creating quantum structures with tunable emission across the entire visible spectrum was approved through simple but effective variation in Zn-to-Cd molar ratio. Indeed, as the Zn:Cd molar ratio changed from 2:0 to 0:2, the emission color was changed significantly from blue to red color with a satisfactory photoluminescence quantum yield. The quantum yield value reached ～41% for the as-prepared core/shell d-dots without any pre/post-treatment, which is a remarkable result for such aqueous-soluble structures. XRD, EDX, ICP, and TEM measurements were applied to determine the structural features of the QDs in a strong quantum confinement regime. The generality of preparation route, its biocompatibility, along with a multi-color emission, can create new opportunities especially for the white light emitting technologies, or multi-color bioimaging for theranostics.     

Enhanced photocatalytic and antibacterial activities of sol–gel synthesized ZnO and Ag-ZnO

Nanocrystalline ZnO and Ag-ZnO (0.1 at%) have been synthesized by sol–gel method and characterized by X-ray diffraction, energy dispersive X-ray spectrum, scanning electron micrographs and UV–vis diffuse reflectance, photoluminescence and electrochemical impedance spectra. Doping ZnO with Ag reduces the average crystal size, sharpens the band gap absorption and decreases the charge-transfer resistance. The bactericidal and photocatalytic activities of sol–gel synthesized ZnO, tested, respectively, with Escherichia coli and cyanide ion, are larger than those of commercial ZnO nanoparticles. Ag doping by sol–gel method enhances the antibacterial and photocatalytic activities; the latter has been tested using methylene blue, methyl orange and rhodamine B.     

Ag掺杂浓度对ZnO纳米花荧光增强的影响

采用水浴与光照相结合的方法制备了Ag/ZnO纳米复 合结构,研究了不同Ag掺杂浓度对 ZnO发光强度的影响。通过X射线衍射(XRD)、扫描电子显微镜(SEM)和光致发光 (PL)光谱对Ag/ZnO纳米复合物的结构、形貌和光学性能进行了研究。SEM表明,由水浴法制 得的ZnO纳米花结构长约1.0μm,直径为200nm左右。XRD结果显示,Ag掺杂后Ag/ZnO 纳米复合结构衍射峰的强度都增强,当掺杂浓度为0.153wt%时,在38.28°出现了Ag₂O的衍射峰。PL表明,Ag浓度极大影响了ZnO紫外发光强度。当Ag的掺杂 浓度为0.051wt% 时,Ag/ZnO纳米复合结构具有最强的紫外发射强度,同未掺杂的ZnO相比,紫外发光强度提 高了11倍。研究结果表明,利用Ag纳米颗粒的局域表面等离子共振(LSPR)特性增强了ZnO纳 米结构的荧光强度,从而提高了荧光检测的灵敏度。     

CO oxidation and oxygen-assisted CO adsorption/desorption on Ag/MnOx catalysts

A series of Ag-doped manganese oxide catalyst were synthesized by the reflux method in an acid medium. The surface structure of the catalysts was characterized by N₂ adsorption, XRD and TEM experiments. The catalysts showed excellent catalytic activity for CO oxidation. The adsorption and oxidation of CO on a 1.0% Ag/MnO_x catalyst between 393 and 493 K were studied by means of single pulse experiments in a TAP reactor. The adsorption of CO was reversible at these temperatures and CO₂ was formed in an oxidation reaction of CO and lattice oxygen. Curve fitting to the experimental TAP response curves of the reactant and product was used to determine the kinetic parameters for the elementary steps. The activation energies were 83 kJ/mol for CO desorption, 31 kJ/mol for CO₂ desorption, and 116 kJ/mol for the surface CO oxidation by lattice oxygen. In addition, the effect of coadsorbed O₂ on CO adsorption was studied by the TAP technique. Below 353 K, there was a sharp increase, by about one order of magnitude, in the rate constant of CO adsorption promoted by the presence of coadsorbed O₂.     

Synthesis and characterization of Ag-doped Ti02 nanotubes

常压碱熔-水热法制备了银掺杂TiO2复合纳米管。氮吸附法测定其比表面积与原料相比,增加了2.3倍,达82m2/g。用XRD、TEM和XPS进行了表征。TiO2纳米管由锐钛矿相和金红石相组成,研究表明复合纳米管中银元素以金属银和氧化银状态共存。因长径比增大,其XRD衍射峰峰高和峰强均大幅度降低。UV-Vis吸收光谱显示,银掺杂TiO2复合纳米管的吸收光谱发生了红移,带边红移近40nm。这是因为在TiO2纳米管表面形成了肖特基结,TiO2禁带宽度之间形成了杂质能级,使其表观禁带宽度减小,有助于光生电子的迁移,减少电子-空穴复合;纳米管表面羟基氧（—OH）使其表面的酸性活性点增加,增强了价带中光生空穴的氧化能力。     

磁控溅射法制备Ag掺杂p型ZnO薄膜的研究

采用磁控溅射法在石英玻璃基片上生长ZnO和ZnO:Ag薄膜。借助于SEM、XRD、霍尔测试、透射谱测试等方法,分析了O2气氛下退火温度对薄膜结构和电学性能的影响。霍尔测试结果表明,Ag掺杂ZnO薄膜经过600℃的O2气氛中热处理转变为p型电导。薄膜的XRD测试表明晶粒大小随退火温度升高而增大,所有薄膜样品只出现(002)衍射峰,呈现c轴取向生长。薄膜对可见光的透过率大于83%,其吸收限为378nm。     

Silver doping: A potential means to grow high quality YBa2Cu3O7?x thin films on bare sapphire

High qualityAg-doped YBa₂Cu₃O_7–x (YBCO) thin films have been grown by laser ablation on ¯1012 bare sapphire. This work demonstrates thatAg-doping can be used as very convenient means to realize good quality YBCO films on highly coveted sapphire substrates for microwave applications of highT _c thin films.