The instability of terahertz plasma waves in cylindrical FET

In this paper, the Dyakonov–Shur instability of terahertz (THz) plasma waves has been analyzed in gated cylindrical field effect transistor (FET). In the cylindrical FET, the hydrodynamic equations in cylindrical coordinates are used to describe the THz plasma wave in two- dimensional electronic gas. The research results show that the oscillation frequency of the THz plasma wave is increased by increasing the component of wave in the circumferential direction, but instability increment of the THz plasma wave are increased by increasing the radius of channel.     

Synthesis and characterization of Cu-doped polymeric carbon nitride

Polymeric carbon nitride doped with copper through a solid-state reaction was characterized by several techniques, among them are UV-visible spectroscopy, infrared spectroscopy, X-ray photoelectron spectroscopy, etc. The material is a semiconductor with a wide band gap of 2.74 eV. Sites of both Cu(I) and Cu(II) were detected, apparently only coordinated by the polymer. The material comprises crumpled nanosheets, and is substantially an amorphous layered material with a prevalent 2D structure with low inter-planar interactions, as shown by X-ray diffractometry and TeraHertz spectroscopy. Photo-oxidation of benzyl alcohol was used to probe the active sites of the material, comparing them with the non-doped material. The higher activity and selectivity toward salicylic alcohol of the non-doped material can be due to both a more localized electron transfer and a longer lifetime of the hole–electron pair. Cu-CN favored the oxidation of hydroxymethyl group. Therefore, the presence of copper can favor different reaction pathways with respect to the non-doped material.     

Terahertz characterisation of UV offset lithographically printed electronic-ink

Inkjet-printed electronics are showing promising potential in practical applications, but methods for real-time, non-contact monitoring of printing quality are lacking. This work explores Terahertz (THz) sensing as an approach for such monitoring. It is demonstrated that alterations in the localised dielectric characteristics of inkjet-printed electronics can be qualitatively distinguished using quasi-optically-based, sub-THz reflection spectroscopy. Decreased reflection coefficients caused by the sintering process are observed and quantified. Using THz near-field scanning imaging, it is shown that sintering produces a more uniform spatial distribution of permittivity in the printed carbon patterns. Images generated using THz-TDS based imaging are presented, demonstrating the combination of high resolution imaging with quantification of complex permittivities. This work, for the first time, demonstrates the feasibility of quality control in printed electronic-ink with THz sensing, and is of practical significance to the development of in-situ and non-contact commercial-quality characterisation methods for inkjet-printed electronics.     

2.52THz面阵透射成像系统改进及分辨率分析

太赫兹(THz)面阵成像具有成像速度快和像素多等特点,因此具有广阔的应用前景。成像系统的光路设计对成像质量具有很大影响。利用PyrocamⅢ热像仪作为面阵探测器,利用相干公司SIFIR-50连续太赫兹激光器作为成像光源,搭建太赫兹面阵实时成像系统,并通过多个离轴抛面镜和聚乙烯透镜对原有成像系统进行改进,以人民币水印、镂空金属板和分辨率板为目标进行实时面阵成像,获得了较为清晰的图像,通过与原有成像结果对比,验证了成像质量的提高,并通过分析成像结果对该成像系统的分辨率进行估计,该成像系统分辨率可以达到0.6 mm。     

MEMS THz滤波器的制作工艺

基于MEMS技术制作了太赫兹(THz)滤波器样品,研究了制作滤波器的工艺流程方案,其关键工艺技术包括硅深槽刻蚀技术、深槽结构的表面金属化技术、阳极键合和金-硅共晶键合技术。采用4μm的热氧化硅层作刻蚀掩膜,成功完成了800μm的深槽硅干法刻蚀;采用基片倾斜放置、多次离子束溅射和电镀加厚的方法完成了深槽结构的表面金属化,内部金属层厚度为3~5μm;用硅-玻璃阳极键合技术和金-硅共晶键合技术实现了三层结构、四面封闭的波导滤波器样品加工。测试结果表明,研制的滤波器样品中心频率138GHz,带宽15GHz,插损小于3dB。     

氧化钒薄膜太赫兹波段频率特性研究

利用直流对靶磁控溅射镀膜法,在Si衬底上制备出在太赫兹（THz）波段具有开关性能的氧化钒（VOx）薄膜。用X射线光电子能谱（XPS）、扫描电子显微镜（SEM）方法对VOx薄膜的组份和形貌进行表征。利用THz时域频谱系统（THz-TDS）对VOx薄膜的光致相变性能进行测试。实验表明,VOx薄膜在波长532 nm连续激光照...     

太赫兹波段电磁超介质的应用及研究进展

太赫兹波和电磁超介质是电磁学领域关注的热点.太赫兹波与电磁超介质相互作用可以实现对太赫兹波的操纵和调控,有望填补"太赫兹空白".介绍了太赫兹波段电磁超介质的研究进展,包括电磁超介质电磁性能可调谐的实施途径,电磁超介质在太赫兹功能器件方面的应用(调制器/开关、传感器/探测器、滤波器、偏振元件和吸波器),太赫兹波段表面等离...     

掺硫硒化镓晶体在太赫兹波段的光学特性

利用太赫兹时域光谱技术测量了掺硫硒化镓(GaSe1-xSx)晶体在太赫兹波段的光学参数,包括折射系数、吸收系数等.使用自由空间电光取样法获得了太赫兹电磁波的脉冲波形.对不同硫掺杂量的硒化镓晶体进行了研究,在硫的掺杂量为0,0.01,0.14,0.26,0.37时,在0.2-2.0THz测得了GaSe1.S.的折射系数、...     

Low noise wide bandgap SiC based IMPATT diodes at sub-millimeter wave frequencies and at high temperature

We have presented a comparative account of the high frequency prospective as well as noise behaviors of wide-bandgap 4H-SiC and 6H-SiC based on different structures of IMPATT diodes at sub-millimeter-wave frequencies up to 2.18 THz. The computer simulation study establishes the feasibility of the SiC based IMPATT diode as a high power density terahertz source. The most significant feature lies in the noise behavior of the SiC IMPATT diodes. It is noticed that the 6H-SiC DDR diode shows the least noise measure of 26.1 dB as compared to that of other structures. Further, it is noticed that the noise measure of the SiC IMPATT diode is less at a higher operating frequency compared to that at a lower operating frequency.     

大功率太赫兹回旋管的腔体分析与模拟

以0.3 THz回旋管为研究对象,对 TE06模回旋管腔体进行理论分析和起振电流的计算,以避免模式竞争的出现。对选取的电参数进行粒子模拟仿真,在10 kV和300 mA条件下得到 TE06模输出、平均输出功率为152 W及输出频率为299.5 GHz的模拟结果,并对不同磁场和不同电流情况下输出功率进行了分析,为太赫兹回旋管的研制提供参考。