高纯半绝缘SiC电阻率影响因素

采用物理气相传输(PVT)法进行高纯半绝缘SiC晶体生长,利用高温真空解吸附以及在系统中通入HCl和H2的方法,有效降低了系统中N、B和Al等杂质的背景浓度。使用二次离子质谱(SIMS)对晶体中杂质浓度测试,N、B和Al浓度分别小于1×1016、1×1015和2×1014 cm-3。对加工得到的晶片进行测试,全片的电阻率均在1×1010Ω·cm以上,微管密度小于0.02 cm-2,(004)衍射面的X射线摇摆曲线半高宽为34″。结果表明,该方法可以有效降低SiC晶体中N、B和Al等杂质浓度,提升SiC晶片的电阻率。使用该方法成功制备了4英寸(1英寸=2.54 cm)高纯半绝缘4H-SiC晶体。     

综合物探手段在前道矿山勘查中的应用

介绍了高精度磁法测量和高密度电阻率法测量的原理,并将其应用在前道矿山勘查中。通过对数据解译圈定构造断裂两条,为矿区深部找矿提供了指导。为下一步勘探工作提供了依据。     

Silver-plated polyamide fabrics with high electromagnetic shielding effectiveness performance prepared by in situ reduction of polydopamine and chemical silvering

In this article, the silver-plated polyamide fabrics (SPPAFs) with high electroconductibility and shielding effectiveness were fabricated by using in situ reduction of polydopamine and chemical silvering. The effects of SPPAFs dopamine (C₈H₁₁O₂N) and silver nitrate (AgNO₃) concentration on surface resistivity and electromagnetic interference shielding effectiveness were studied. The results showed that the surface resistivity of SPPAFs can reach a minimum value of 0.06 ± 0.014 Ω cm⁻¹, when C₈H₁₁O₂N concentration is 4 g L⁻¹ and the AgNO₃ concentration is 120 g L⁻¹. The shielding effectiveness of SPPAFs in the wide frequency range of 10–3000 MHz increases with the increase in the concentration of AgNO₃, and increases first and stabilizes afterward with increasing C₈H₁₁O₂N concentration. When the concentration of C₈H₁₁O₂N and AgNO₃ is 3 and 120 g L⁻¹, respectively, mean shielding effectiveness values in the low-, medium-, and high-frequency bands are 71.3, 73.8, and 76.1 dB, respectively. Moreover, the mean shielding effectiveness values is 83.79 dB in the frequency range of 1.2–2.3 GHz. The dominant shielding mechanism of SPPAFs is the reflected electromagnetic waves and the absorption shielding effectiveness is less than 2 dB. The average electromagnetic shielding values of SPPAFs are above 67 dB after 16 weeks of storage, when C₈H₁₁O₂N concentration is 4 g L⁻¹ and the AgNO₃ concentration is 80 and 100 g L⁻¹. The prepared SPPAFs show promising applications in military textiles and smart wearable clothing. © 2019 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2019 , 136, 48227.     

A comparative study of (Ce) and (Gd) doping influence on the superconducting properties of YBCO ceramics

This work is devoted to investigate the structural and electrical properties of the Ce, Gd-doped YBCO superconductors bulk ceramics. YBa_2-xRE_xCu₃O_7−δ (x = 0, 0.01, 0.05, 0.1) (RE = Gd, Ce) samples were prepared by means of conventional solid-state reaction. X-ray diffraction analysis was carried out to identify the present phases in the as-prepared samples followed by the determination of their lattice parameters. Fourier Transform Infrared Spectroscopy (FTIR) was used to identify the functional groups. Furthermore, the morphology and the surface roughness of the studied samples were characterized using Scanning Electronic Microscopy (SEM) and Atomic Force Microscopy (AFM). Vickers Micro-hardness of the as-prepared samples was examined. Besides, the electrical resistivity measurements were achieved to determine the critical transition temperature T_C and the critical current density J_C.The effect of Ce and Gd additions is clearly noticed in the obtained results, where all the prepared samples are superconductors with the presence of Y123 as a major polycrystalline phase. From the XRD patterns, the intensities of the Y123 corresponding peaks decrease with further increasing the Ce and Gd contents. In addition, the variation of the cell parameters was significant after additions of both Ce and Gd, which affect the grain size and the oxygen content of the YBa_2-xRE_xCu₃O_7−δ system. An improvement of the structure and surface roughness is observed on SEM and AFM images. Likewise, Vickers micro-hardness has increased after the Ce and Gd additions. Although, the critical transition temperature T_C was not further increased upon Ce or Gd additions compared to the undoped YBCO samples. Nevertheless, an exception has been recorded with an increase of T_C for YBa_2-xRE_xCu₃O_7−δ with (RE = Gd, x=0.01) to reach 88 K. In contrary, an improvement of the deduced critical current density J_C was achieved for all Ce-doped YBCO samples unlike those of Gd-doped samples.     

Electrical resistivity of silicon nitride produced by various methods

It has been shown that the grain growth and amount of the glass phase influence the electrical resistivity of pressureless sintered and spark plasma sintered silicon nitride. Sintering additives strongly affect the impurity conductivity of pressureless sintered silicon nitride and slightly influence the intrinsic conductivity due to the longer sintering process as compared with the spark plasma sintering. It was demonstrated that Al₂O₃-Y₂O₃ lead to decrease in the electrical resistivity of SPSed silicon nitride due to increase in the band gap width as opposed to Al₂O₃-MgO. Effect of the sintering additive on the impurity conductivity is practically absent but there is a strong dependence of the sintering temperature for reported spark plasma sintered silicon nitride. However, intrinsic conductivity of SPSed silicon nitride is affected by both sintering temperature and sintering additive. It was also shown that electrical resistivity of produced ceramics is linearly depends on the content of β-Si₃N₄ and microhardness. Electrical resistivity of manufactured silicon nitride varied from 3.16·10⁹ to 1.73·10¹¹ Ω?m. It has been observed strong influence of the sintering additive and sintering temperature on the electrical properties of SPSed and pressureless sintered silicon nitride.     

Evaluation of the electrical integrity of E-textiles subjected to environmental conditions

E-textiles contain electrically conductive elements and electronic devices that are integrated in textile substrate. Wearable e-textiles are expected to perform like textiles in terms of breathability, conformability, and comfort despite the presence of the electrically conductive elements and electronics. E-textiles are also expected to provide reliable data and signal processing like electronic devices while they are subjected to normal wear and tear under different environmental conditions. The goal of this research was to investigate the electrical integrity of e-textiles while they are subjected to environmental conditions. Different woven samples of electronic-improved outer tactical vest with two narrow conductive traces woven in the warp direction were subjected to range of temperatures and humidity, including extreme conditions. The effects of formation parameters (e-yarn type, number of e-yarns/trace, and weldability), temperature, and humidity on the integrity of the e-textiles were studied. It was found that resistance of networks was affected by changes in air temperature and humidity and the quality of the weld had the greatest impact on electrical integrity of the conductive network. This impact was pronounced in more extreme environmental conditions, which revealed that there was a strong interaction between the weldability, temperature, and humidity.     

煤矿井下探测中影响不含水断层视电阻率变化的单一主控因素分析

选取晋城矿区典型3号无烟煤试样，在实验室进行单轴加载条件下的电阻率测试实验，并开展矿井瞬变电磁法探测不含水断层现场试验，研究了不含水断层的视电阻率变化特征。结果表明:煤样加载全过程，经过压密阶段、弹性变形阶段、塑性变形阶段、峰值后破裂阶段、残余变形阶段5个阶段；煤样应力应变曲线表现为由低到高再到低的特征，煤样电阻率曲线表现为由高到低再到高的特征；加载过程中，压密阶段、弹性变形阶段应力越大电阻率越小，应力为影响电阻率变化的主控因素；塑性变形阶段，电阻率先减小后增大，应力和裂隙共同影响电阻率变化，由应力为主要因素逐渐转变到裂隙为主要因素；峰值后破裂阶段和残余变形阶段电阻率急速增大，裂隙为影响电阻率变化的主控因素；通过瞬变电磁法探测不含水断层试验，发现不含水断层导致视电阻率明显升高，表明裂隙为影响断层视电阻率单一变化的主要因素。     

不同煤层掘进工作面瞬变电磁法探测应用研究

煤矿井下瞬变电磁法成为煤矿井下超前探测工作的重要手段，在矿井水害预测预报上发挥着很大的作用。随着矿井上组煤层资源的逐渐枯竭，煤矿开采资源逐渐延伸向下组煤层。同一井田范围内同煤层及其顶底板的岩性特征一般相差不大，瞬变电磁法在同煤层施工过程中接收到的物理背景场较为接近；而不同煤层及其顶底板岩性特征通常会有较大的差别，瞬变电磁法在不同煤层施工过程中会接收到差别较大的物理背景场。当矿井存在多煤层开采时，通过大量数据研究瞬变电磁法在不同煤层巷道探测中的响应特征规律，分析并掌握不同煤层条件对瞬变电磁法探测结果的影响，能够提高瞬变电磁法在多煤层探测成果的准确性。     

基于稳定固溶体团簇模型的无扩散阻挡Cu合金薄膜的成分设计

随着超大规模集成电路的发展,器件特征尺寸不断缩小,必然会出现Cu互连扩散阻挡层厚度无法进一步减小等瓶颈问题。因此,开发新型无扩散阻挡层Cu合金薄膜(Cu种籽层)势在必行。该新型互连结构在长时间的中高温(400~500℃)后续工艺实施过程中,需同时具备高的稳定性(不发生互扩散反应)和低的电阻率。基于此,首先综述了目前无扩散阻挡层结构的研究现状及问题,然后对基于稳定固溶体团簇模型设计制备的无扩散阻挡Cu-Ni-M薄膜的研究工作进行了梳理,通过多系列薄膜微观结构、电阻率及稳定性的对比,深入探讨了第三组元M的选择原则及其对薄膜热稳定性的影响。为进一步验证稳定固溶体团簇模型的有效性,对第二组元的变化进行了相关讨论。结果证实,选取原子半径略大于Cu、难扩散且难溶的元素作为第三组元M,薄膜表现出良好的扩散阻挡能力;当M/Ni=1/12,即合金元素完全以团簇形式固溶于Cu基体时,薄膜综合性能达到最优,能够满足微电子行业的要求。所有研究表明,稳定固溶体团簇模型在无扩散阻挡层Cu合金薄膜的成分设计方面十分有效,该模型也有望在耐高温Cu合金及抗辐照材料成分设计方面推广使用。     

Microstructural and Tribological Behavior of Pulse Electroplated Nickel Barrier on Copper Conductors

The microstructural, mechanical, and tribological behaviors of electroplated Ni on Cu conducting substrates have been investigated in this study. The microstructural studies were performed by X-ray diffraction (XRD) analysis and scanning electron microscopy (SEM). The results showed that initially (111) with (220), (200) Ni texture components were predominant in the coating, and increasing the current density from 0.1 to 0.5 A/cm² led to the development of a strong (111) texture. The presence of ultrafine grains coupled with a (111) Ni texture improved the coating microhardness and wear properties significantly. It was shown that with an increase in current density, wear resistance of the coatings improved significantly and the electrical resistivity increased due to the highly populated grain boundaries.