Doping and electrical characteristics of in-situ heavily B-doped Si1−x−yGexCy films epitaxially grown using ultraclean LPCVD

Doping and electrical characteristics of in-situ heavily B-doped Si_1−x−yGe_xC_y (0.22<x<0.6, 0<y<0.02) films epitaxially grown on Si(100) were investigated. The epitaxial growth was carried out at 550°C in a SiH₄–GeH₄–CH₃SiH₃–B₂H₆–H₂ gas mixture using an ultraclean hot-wall low-pressure chemical vapor deposition (LPCVD) system. It was found that the deposition rate increased with increasing GeH₄ partial pressure, and only at high GeH₄ partial pressure did it decrease with increasing B₂H₆ as well as CH₃SiH₃ partial pressures. With the B₂H₆ addition, the Ge and C fractions scarcely changed and the B concentration (C_B) increased proportionally. The C fraction increased proportionally with increasing CH₃SiH₃ partial pressures. These results can be explained by the modified Langmuir-type adsorption and reaction scheme. In B-doped Si_1−x−yGe_xC_y with y=0.0054 or below, the carrier concentration was nearly equal to C_B up to approximately 2×10²⁰ cm⁻³ and was saturated at approximately 5×10²⁰ cm⁻³, regardless of the Ge fraction. The B-doped Si_1−x−yGe_xC_y with high Ge and C fractions contained some electrically inactive B even at the lower C_B region. Resistivity measurements show that the existence of C in the film enhances alloy scattering. The discrepancy between the observed lattice constant and the calculated value at the higher Ge and C fraction suggests that the B and C atoms exist at the interstitial site more preferentially.     

Bi系2223高温超导带材力学性质

对4种Bi系2223高温超导带材77 K下的力学性质进行了实验研究.通过选择合适的合金包套替代传统的银包套,带材的机械性能能有所提高,但电学性质有所降低,尤其是内包套采用合金、外包套采用银,其机械性能反而低于纯银包套带材.通过X射线衍射图谱发现,当包套采用合金材料,尤其是内包套采用合金、外包套仍采用纯银,会大大降低样品中2223相的体积含量.相比较临界电流密度,n值对材料的破坏更为敏感.利用X光同步辐射技术初步探讨了银包套带材在室温和77 K下的损伤破坏过程.     

Effects of growth conditions on the domain structure and dielectric properties of (1 − x)Pb(Sc1/2Nb1/2)O3–xPbTiO3 single crystals

The studies of the (1 − x)Pb(Sc_1/2Nb_1/2)O₃–xPbTiO₃ (PSN–PT) single crystals reveal that the chemical and physical properties of the materials are affected by the growth conditions. By the measurements of the dielectric constant as a function of temperature upon cooling, it is found that crystals grown from the same charged stoichiometric composition (x = 0.425), but under different flux environments (i.e. the composition of flux and the flux to PSN–PT ratios are varied), show anomalies (i.e. phase transitions) at different temperatures. This phenomenon is attributed to the complex local chemical structure of the PSN–PT solid solution single crystals with B-site random occupancy of three different cations (Sc³⁺, Nb⁵⁺ and Ti⁴⁺). The dielectric and domain structure of the PSN–PT crystals with composition near the morphotropic phase boundary (MPB) are investigated, showing much more complex situations compared with Pb(Sc_1/2Nb_1/2)O₃.     

Synthesis and characterization of Li ion conducting La2/3−xLi3xTiO3 by a polymerizable complex method

Ultrafine lithium ion conducting La_2/3−xLi_3xTiO₃ (x = 0.11, LLT) powder was synthesized by a simple polymerizable complex method based on the Pechini-type process. The formation mechanism, homogeneity and microstructure of the samples were investigated by thermal analysis (TG/DTA), X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). XRD analysis indicated the formation of pure perovskite-type phase. The powder synthesized at a temperature as low as 900 °C in a much shorter time than solid-state reaction method was well crystallized. The lithium ion conductivity of the LLT ceramics sintered at 1200 °C was found to be 9 × 10⁻⁴ S/cm at room temperature.     

The influence of F doping on the activity of PbO2 film electrodes in oxygen evolution reaction

The PbO₂ and F⁻-doped PbO₂ (F-PbO₂) film electrodes have been prepared by an electrodeposition process onto platinum substrate. The changes of their electrochemical activity for oxygen evolution (OE) reaction with accelerated electrolysis time have been studied. The results show that the activity of the electrodes decreases with increasing electrolysis time. This can be attributed to the conductivity variations, which are caused by the decrease of the oxygen vacancy concentration in PbO₂ films during OE. The mechanism of the decrease of the oxygen vacancies has been investigated. For F-PbO₂ film electrodes, though its electrochemical activity is somewhat lower than that of undoped one, its activity stability is much higher in comparison with that of PbO₂. The influence of F⁻ doping on the activity of PbO₂ film electrodes has been also discussed.     

Preparation of CuIn1−xGaxSe2 thin films by sputtering and selenization process

CuIn_1−xGa_xSe₂ polycrystalline thin films were prepared by a two-step method. The metal precursors were deposited either sequentially or simultaneously using Cu–Ga (23 at%) alloy and In targets by DC magnetron sputtering. The Cu–In–Ga alloy precursor was deposited on glass or on Mo/glass substrates at either room temperature or 150°C. These metallic precursors were then selenized with Se pellets in a vacuum furnace. The CuIn_1−xGa_xSe₂ films had a smooth surface morphology and a single chalcopyrite phase.     

Solid-state photoelectrochemical device based on poly(3-hexylthiophene) and an ion conducting polymer electrolyte, amorphous poly(ethylene oxide) complexed with I3/I redox couple

The photoelectrochemical properties of a solid-state photoelectrochemical cell (PEC) based on poly(3-hexylthiophene), P3HT, and an ion-conducting polymer electrolyte, amorphous poly(ethylene oxide), POMOE, complexed with I₃⁻/I⁻ redox couple has been constructed and studied. The current–voltage characteristics in the dark and under white light illumination, transient photocurrent and photovoltage studies, photocurrent action spectra for front and back side illuminations and an open-circuit voltage and short-circuit current dependence on light intensity have been studied. An open-circuit voltage of 130 mV and a short-circuit current of 0.47 μA cm⁻² were obtained at light intensity of 100 mW/cm². IPCE% of 0.024% for front side illumination (ITO/PEDOT) and IPCE% of 0.003% for backside illumination (ITO/P3HT) were obtained.     

Sputtered Cd1−xZnxTe films for top junctions in tandem solar cells

Cd_1−xZn_xTe alloy films with 1.6 and 1.7 eV band gaps were deposited by RF magnetron sputtering from targets made either of mixed powders or alloys of CdTe and ZnTe (25% and 40%). High-quality polycrystalline films with the (1 1 1) preferred orientation were obtained. The films were characterized using X-ray diffraction (XRD), scanning electron microscopy, resistivity, optical absorption, Raman, and photoluminescence. The EDS, XRD, and optical absorption analysis indicated that the x-value of the as-grown films were typically 0.20 and 0.30 for films sputtered from 25% and 40% ZnTe containing targets, respectively. The as-deposited alloy films exhibit quite low photovoltaic performance when used to make cells with CdS as the hetero-junction partner. Therefore, we have studied various post-deposition treatments with vapors of chlorine-containing materials, CdCl₂ and ZnCl₂, in dry air or H₂/Ar ambient at 390 °C. The best performance of a Cd_1−xZn_xTe cell (, ) was found for treatment with vapors of the mixed CdCl₂+0.5%ZnCl₂ in an H₂/Ar ambient after pre-annealing at 520 °C in pure H₂/Ar.     

Photoelectrochemical solar energy conversion based on blend of poly(3-hexylthiophene) and fullerene

A solid-state photoelectrochemical solar energy conversion device based on blend of poly(3-hexylthiophene) (P3HT) and fullerene (C₆₀) has been constructed and characterized. The photoelectrochemical performance parameters of the device were compared with pure P3HT solid-state photoelectrochemical cell. The current–voltage characteristics in the dark and under white light illumination and photocurrent spectra for front- and backside illuminations have been studied. The following device parameters were obtained: an open-circuit voltage of 97.8 mV and a short-circuit current of 7.28 μA/cm² at light intensity of 100 mW/cm²; IPCE% of 0.43% for front side illumination (ITO/PEDOT) and IPCE% of 0.01% for backside illumination (ITO/P3HT:C₆₀). The dependence of the short-circuit current and an open-circuit voltage on the light intensity and time have also been studied.