A novel composite UV/blue photodetector based on CMOS technology: design and simulation

A novel composite ultraviolet （UV）/blue photodetector is proposed in this paper. Lateral ring-shaped PN junction is used to separate photogenerated carriers and inject the non-equilibrium excess carriers to the bulk, changing the bulk potential and shifting the threshold voltage of the metal-oxide-semiconductor field-effect transistor （MOSFET） as well as the drain current. Numerical simulation is carried out, and the simulation results show that the composite photodetector has the enhanced responsivity for UV/blue spectrum. It exhibits very high sensitivity to weak and espe- cially ultra-weak light. A responsivity of 7000 A/W is obtained when the photodetector is illuminated under incident optical power of 0.01 μW. As a result, this proposed combined photodetector has great potential for UV/blue and ul- tra-weak light applications.     

一种基于运动估计的视频降噪算法

为了有效地去除视频序列中的噪声,提高视频图像质量,提出了一种基于运动估计的视频降噪算法。该算法在由视频序列中的当前帧和前后多帧图像构建的图像层中,通过运动估计技术,沿着物体的运动轨迹进行时域帧间滤波。实验结果显示,本文提出的算法充分利用了视频序列的时域信息,可以有效去除视频序列中的噪声,同时可以很好地保持视频图像的细节。     

一种改进的CMOS紫外/蓝光光电二极管的二维响应度物理模型

A CMOS UV and blue-extended photodiode is presented and fabricated for light detection in the ultraviolet/blue spectral range. An octagon homocentric ring-shaped geometry is used to improve the ultraviolet responsivity and suppress edge breakdown. This paper has established a two-dimensional responsivity physical model for the presented photodiode and given some numerical analyses. The dead layer effect, which is caused by the high-doping effects and boron redistribution, is considered when analyzing the distribution of the current of the proposed UV and blue-extended photodiode. In the dead layer, the boron doping profile decreases towards the surface. Simulated results illustrate that the responsivity in the UV range is obviously decreased by the effect of the dead layer, while it is not affected in the visible and near-infrared part of the spectrum. The presented photodiode is fabricated and the silicon tested results are given, which agree well with the simulated ones.     

瞬态电压抑制二极管的建模及仿真

基于0.5 μm CMOS 工艺,设计瞬态电压抑制（TVS）二极管.利用黑箱理论对该器件在高电压大电流下的反向工作特性建模,在Matlab 数值模拟工具中利用所建模型仿真,获得了包含一次击穿、二次击穿（硬失效）点的反向I –U 特性曲线;基于Silvaco TCAD 工艺器件仿真平台,经DC 仿真验证所建模型的准确性.仿真结果表明,2 种方法获得的特性曲线基本吻合,本文所建数值模型能够预测TVS 二极管瞬态电压抑制时的电特性.     

一种高分频下数字IC的低功耗逻辑综合方案

针对时钟分频系数较大的情况下,传统电路实现分频需要大量的寄存器,导致芯片功耗和面积增加的问题,提出了一种异步分频与门控时钟技术相结合的低功耗逻辑综合方案。基于HHGrace 0.11 μm ULL工艺,通过采用所提出的方案和使用Design Compiler工具,完成了高精度Σ-Δ ADC芯片中数字集成电路的逻辑综合。结果表明,使用该方案得到的数字IC的功耗为132.627 μW。与传统方案相比,功耗降低了38.88%,面积缩小了2.7%。与门控时钟综合方案相比,功耗降低了25.43%。     

用于CMOS图像传感器的双极结型光栅晶体管特性的数值模拟与分析

提出一种用于CMOS图像传感器的新型光电检测器--双极结型光栅晶体管,并建立了其解析模型.基于0.6μm CMOS工艺参数的模拟结果表明双极结型光栅晶体管具有传统光栅晶体管的特性,但与传统光栅器件相比,随着入射光功率的增加,双极结型光栅晶体管的光电流密度呈指数式增长,且其蓝光响应特性得到改善.     

基于CMOS工艺的图像传感技术研究与进展

比较了传统的CCD图像传感器和近几年发展起来的CMOS图像传感器的优缺点;讨论了CMOS图像传感器的关键技术;概述了国内外CMOS图像传感器发展的现状,预测了CMOS图像传感器的发展方向.     

图像传感器像素中MOSFET晶体管的栅感应噪声原理及分析

提出一种CMOS图像传感器像素中MOSFET晶体管的栅感应噪声原理.分析表明MOSFET工作于强反型区的栅感应噪声比工作于亚阈值区明显,但当施加在栅极电压达到3V时,随着ω/ωT 比值的增加,MOSFET工作于亚阈值区的栅感应噪声比工作于强反型区明显.同时详细分析了有源像素(APS)中的RESET晶体管的栅感应噪声的影响并提出抑制栅感应噪声的电路     

CMOS图像传感器像素中MOSFET晶体管的栅感应噪声原理及分析

提出一种CMOS图像传感器像素中MOSFET晶体管的栅感应噪声原理.分析表明MOSFET工作于强反型区的栅感应噪声比工作于亚阈值区明显,但当施加在栅极电压达到3V时,随着ω/ωT比值的增加,MOSFET工作于亚阈值区的栅感应噪声比工作于强反型区明显.同时详细分析了有源像素(APS)中的RESET晶体管的栅感应噪声的影响并提出抑制栅感应噪声的电路.     

一种多用途集成电话台灯电路

设计了一种简单、方便的多用途集成电话台灯电路,该电路具有夜间响铃或摘机时灯会自动点亮,挂机后延时４５秒钟自行熄灭,白天或有灯光时响铃或摘机不会启动台灯电路,一时可作普通调光台灯使用;同时能显示电话线路和话机的状态,防止有人挂线盗打电话等功能。