Surface Passivation Performance of Atomic-Layer-Deposited Al2O3 on p-type Silicon Substrates

Surface passivation performances of Al2O3 layers deposited on p-type Czochralski Si wafers by atomic layer deposition（ALD） were investigated as a function of post-deposition annealing conditions.The maximal minority carrier lifetime of 4.7 ms was obtained for AI2O3 passivated p-type Si.Surface passivation mechanisms of Al2O3 layers were investigated in terms of interfacial state density（Dit） and negative fixed charge densities（Qfix） through capacitance—voltage（C— V） characterization.High density of Qfix and low density of Dit were needed for high passivation performances,while high density of Dit and low density of Qfixdegraded the passivation performances.A low Dit was a prerequisite to benefit from the strong field effect passivation induced by high density of negative fixed charges in the Al2O3 layer.     

Zinc recovery and waste sludge minimization from chromium passivation baths

This work reports the feasibility of applying emulsion pertraction technology (EPT) aiming at zinc recovery and waste minimization in the zinc electroplating processes that include Cr (III) passivation. The assessment consists of firstly the lifetime extension of the passivation baths by selective removal of the tramp ions zinc and iron, and secondly, the recovery of zinc for further reuse. Spent passivation baths from a local industry were tested, being the major metallic content: Cr³⁺ 9000 mg L⁻¹, Zn²⁺ 12,000 mg L⁻¹, Fe³⁺ 100 mg L⁻¹. Working in a Liqui-Cel hollow fiber membrane contactor and using the extractant bis(2,4,4-trimethylpentyl) phosphinic acid, reduction of zinc and iron concentrations below 60 mg L⁻¹ and 2 mg L⁻¹, respectively were obtained, while trivalent chromium, the active metal that generates the passivation layer, was retained in the baths. Zinc was selectively transferred to an acidic stripping phase that in the experimental time reached a concentration of 157,000 mg L⁻¹. Zinc recovery by electrowinning from the acidic stripping phase without any pretreatment of the electrolyte solution provided a purity of 98.5%, matching the lower commercial zinc grade. As a result of the extension of the life time of the passivation bath, significant environmental advantages are derived such as minimization of the volume of hazardous wastes and savings in the consumption of raw materials.     

局部增强压焊块铝层厚度的工艺方法

针对目前铜线封装对芯片压焊块的铝层厚度要求较高的问题,通过改进芯片制造工艺流程,对芯片内部压焊块的铝层进行单独地加厚。以便同时满足芯片封装厂采用铜线打线和芯片制造厂金属刻蚀工艺难易的要求。做法为,在钝化层刻蚀完成后,再生长一层足够厚的金属层,进行钝化层反版的光刻以及湿法刻蚀,只保留下压焊块区域的金属层,此时压焊块区域就...     

Crystalline silicon surface passivation by amorphous silicon carbide films

This article reviews the surface passivation of n- and p-type crystalline silicon by hydrogenated amorphous silicon carbide films, which provide surface recombination velocities in the range of 10 cm s⁻¹. Films are deposited by plasma-enhanced chemical vapor deposition from a silane/methane plasma. We determine the passivation quality measuring the injection level (Δn)-dependent lifetime (τ_eff(Δn)) by the quasi-steady-state photoconductance technique. We analyze the experimental τ_eff(Δn)-curves using a physical model based on an insulator/semiconductor structure and an automatic fitting routine to calculate physical parameters like the fundamental recombination velocities of electrons and holes and the fixed charge created in the film. In this way, we get a deeper insight into the effect of the deposition temperature, the gas flow ratio, the doping density of the substrate and the film thickness on surface passivation quality.     

Investigation of various surface passivation schemes for silicon solar cells

In this work, we have investigated three different surface passivation technologies: classical thermal oxidation (CTO), rapid thermal oxidation (RTO) and silicon nitride by plasma enhanced chemical vapor deposition (PECVD). Eight different passivation properties including SiO₂/SiN_x stacks on phosphorus diffused (100 and 40 Ω/Sq) and non-diffused 1 Ω cm FZ silicon were compared. Both types of SiO₂ layers, CTO and RTO, yield a higher effective lifetime on the emitter surface than on the non-diffused surface. For the SiN_x layers the situation is reverted. On the other hand, with SiO₂/SiN_x stacks high lifetimes are obtained not only non-diffused surface but also on the diffused surface. Thus, we have chosen the RTO/SiN_x stack layers as front and rear surface passivation in solar cells, which passivate relatively good on the surface and has very low-weighted reflection. On planar cells passivated with RTO/SiN_x a very high V_oc of 675.6 mV and a J_sc of 35.1 mA/cm² was achieved. Compared to a planar cell using CTO the efficiency of RTO/SiN_x cell is 0.8% higher (4.5% relative). It can be concluded that the RTO/SiN_x layers are the optimal passivation for the front and rear surface. On the other hand, for textured cells, the J_sc and FF of RTO/SiN_x cells are lower than those of CTO cells. The main reasons of these J_sc and FF losses were also discussed systematically.     

Influence of chromium on microstructure and etching behaviour of new Ni–Fe–Al based alloy

In the present study, the influence of chromium on the microstructure and etching behaviour of the polycrystalline alloy Ni–13Fe–8Al–4Ti (at-%) has been examined. The alloy was recently designed for nanomembrane fabrication, but although it showed the necessary γ/γ′ microstructure with cubic, well aligned γ′ precipitates, it proved to be unsuitable for nanomembrane fabrication as the γ matrix was dissolved during chemical etching. To obtain the passivation of the γ matrix, chromium has been added in further modifications containing 1, 2, 3 and 4 at-% chromium. Moreover, the influence of heat treatment and the different cooling rates of heat treatment in air/vacuum have been investigated. For chemical phase extraction, the application of the chemical etchants MoO₃ acid and ‘G’ etchant has been examined, the formability was characterised by Vickers hardness testing. The main purpose of the present study, namely the passivation of the γ matrix, could be achieved by the addition of 4 at-% chromium and etching with ‘G’ etchant.     

Effects of a a-Si:H layer on reducing the dark current of 1310 nm metal-germanium-metal photodetectors

Two approaches of hydrogenated-amorphous-silicon (a-Si:H), as Schottky-barrier height (SBH) enhancement and passivation layers, were investigated to suppress dark current of 1310 nm metal-germanium-metal photodetectors (MGM-PDs). Observations show that when a-Si:H is inserted between metal and Ge, the dark current is effectively reduced due to SBH enhancement, but similarly lowers photocurrent resulting from the blocking of a-Si:H. In contrast with a-Si:H acting as a passivation layer a very high photo-to-dark current ratio of 6530 is achieved with a high responsivity of 0.72 A/W, attributing to the defect centers on the Ge surface which are passivated. Such a result suggests that the a-Si:H passivation layer is a good candidate in fabricating high-quality 1310 nm MGM-PDs.     

锅炉清洗工作技术方案的制定

本文对锅炉清洗的准备、清洗和钝化等全过程所涉及内容进行一些经验总结，并提出具体技术要求。     

Damage to n-MOSFETs from electrical stress Relationship to processing damage and impact on device reliability

The study reported herein examines and compares damage to n-channel and p-channel metal-oxide-silicon field-effect transistors (MOSFETs) from direct current (d.c.) and alternating current (a.c.) electrical stresses as well as the relationship of this damage to plasma processing damage in MOSFETs. The lightly-doped drain (LDD) MOSFETs used are of 0.5 μm channel length and with a 90 Å thick thermally grown gate oxide fabricated using a full flow CMOS process up to and including metal-1 processes and post-metallization annealing (PMA). The damage to MOSFETs is assessed using transistor parameter characterization and charge-to-breakdown measurements on the gate oxide. It is found that manifestations of d.c. stress-induced damage and a.c. stress-induced damage to transistors are fairly similar in that both forms of damage are passivated by PMA and are reactivated by a subsequent d.c. electrical stress. However, a.c. stress-induced damage is observed to occur at much lower electric fields across the gate oxide than those necessary for d.c. stress-induced damage to be significant. This is attributed to a.c. currents, caused by carrier hopping, occurring at relatively low electric fields. One implication of our results is that plasma-charging damage, often attributed to d.c. electrical stress alone, may comprise an a.c. electrical stress component too.     

Electrochemical deposition of poly(o-anisidine) and polypyrrole at octadecanethiol coated gold electrodes

The o-anisidine and pyrrole have been polymerized by the electrochemical oxidation of monomers on gold electrodes, covered with self-assembled monolayers. The obtained polymer–monolayer systems have been investigated by cyclic voltammetry in aqueous supporting electrolyte solutions containing K₄Fe(CN)₆ and Ru(NH₃)₆Cl₃. The deposition of conducting polymers strongly depends on the integrity of a monolayer. In the case of a large number of SAM defects, the polymerization of o-anisidine and pyrrole leads to the formation of nuclei of the conducting polymer in the insulating matrix of the thiol monolayer. When the polymer is in the conducting (oxidized) form, the nuclei act as an array of microelectrodes. The polarogram-shaped voltammograms obtained for K₄Fe(CN)₆ confirm the hemispherical diffusion of redox species to the polymer nuclei. When the polymer is in the non-conducting (reduced) form, the polymer–octadecanethiol layer blocks the redox processes on the electrode. The exponential-type CV curves observed for Ru(NH₃)₆Cl₃, when the polymer is in its non-conducting state, can be assigned to the tunnelling of electrons through the passivating layer. The use of monolayers with a low number of defects influences the mechanism of polymer growth. Thus, the polypyrrole grows on the layer of thiols, and the poly(o-anisidine) forms polymer nuclei.