铝材在汽车制造技术中的应用

介绍车用铝材的优良性能和研发情况，以及各种车用特种材料和铝制汽车零部件。     

无源光纤网络（PON）技术

该文主要阐述了PON（无源光网络）技术的概念，特点，市场定位，关键技术，优势和应用。     

AlGaAs:Si中与DX中心有关的光生电子陷阱特性研究(英文)

A new electron trap state SD was found by DLTS measurement under light illumination in Si doped A.lxGa1-xAs. This new trap energy level ESD is shallower than the DX center energy in the gap and the concentration of SD is comparable to that of DX centers. The emission activation energy Ec=0.20±0.05eV and capture activation energy Ec= 0.17±0.05eV. The SD DLTS peak has never been detected previously because under dark and thermal equilibrium condition most of the electrons occupy the deeper DX states and most of SD states are empty. However, when the sample is illuminated by light, electrons are excited to the conduction band and then re-captured by SD since the deeper DX states have a slower electron capture rate, thus a new DLTS peak corresponding to SD appears. Constant temperature capacitance transient C-t and transient C-V measurements were also used to further confirm the existence of SD states.     

关于N-Si:Pd中能级E(0.37)和E(0.62)的识别

在已证实Si中与间隙Pd有关的E_(TA)(0.37)和E_(TB)(0.62)能级为同一双施主中心的(0/ +)态与(+/++)态的基础上,本文通过一系列实验事实进一步揭示该中心是有B杂质参与的络合物.     

瞬态C-V法测量AlGaAs:Si中DX中心的电离能(英文)

The thermal ionization energy ET of DX centers in AlxGa1-xAs and its dependence with the value of x and the pressure are very important for estab- lishing the model of DX centers. The conventional DLTS and Hall methods used to DX center measurement have some ambiguities in theoretical analysis and experiments and the values of ET determined are different with those methods. The new constant temperature transient C-V measurement is based on the fact that at low temperature both electron capture and emission rates of DX centers are very slow. During the transient C-V measurement, change; of bias voltages and capacitance measurements are completed in a time duration much shorter than the electron capture and emission time constants, therefore the electrons occupied on the DX centers are considered to be frozen. The density of DX centers, the distribution profile of electrons on DX centers in the depletion region of a Schottky diode at a constant reverse bias, and the density of free electrons in conduction band in the bulk and their temperature dependence have been measured.     

硅中Mo-B络合物性质的理论研究(英文)

Recently, considerabl experimental studies have become available for the 3d transition metal-group ⅢA acceptor complex pair in silicon. Our experimental investigations on 4d transition metal impurities in silicon showed that the interstitial 4d atoms are also easy to move in silicon and to form complexes with other point defects. We have studied the electronic states of the substitutional boron-interstitial molybdenum complex in silicon. The self consistent field calculations were performed by using the SW-Xα theory within the framework of the Watson-sphere-terminated molecular-cluster method. Based on the obtained charge distribution of the system, there is no clear indication to show a transfer of one electron from Mo to B as assumed in the ionic model which has been generally accepted in describing the interaction between a substitutional ⅢA group acceptor atom and an interstitial TM atom.     

区分四个传输网络

时至今日,计算机网络得到了飞速的发展,与此同时,承担着传统语音通信的电话网正悄然地改变着自身的功能,ISDN、ADSL、拨号上网,出租2Mb/s专线多种多样的接入方式正成为团体和个人用户数据传输的主要手段。同时,近一两年来,中国电信、中国移动、中国联通、中国网通、吉通通信等运营商都已经建成或准备兴建自己的传输网络。