一个DC-32GHz两位微机械移相器

采用分布式微机械传输线结构实现了两位移相器,并且为了减小传输线负载电容和驱动电压首次提出了用共面波导传输线来驱动微机械桥的结构(共面波导驱动结构).结果显示驱动电压小于20V,20GHz时两位移相器的相移为0°/20.1°/41.9°/68.2°,插入损耗为-1.2dB.在DC到32GHz的范围内相移具有良好的线性,插入损耗小于-1.8dB,反射损耗好于-11dB.实验结果表明了该结构在高介电常数衬底上制造低插损、宽带数字微机械射频移相器的潜力.     

Comparative Assessment of Adaptive Body-Bias SOI Pass-Transistor Logic

A very low voltage transconductor for video frequency range applications and compatible with standard CMOS technology is described. In the proposed transconductor, except the DC level shifter circuit (DCLS), the whole transconductor uses the main supply voltage [which can be as low as 1.5 V in a standard 0.6 μm CMOS technology] while the DCLS uses a simple charge-pump circuit as its supply voltage and has a very low current consumption. In addition, proper common-mode sense and charge-pump circuits are developed for this low-voltage application. Meanwhile, some techniques to improve the frequency response, linearity, and noise performance of the proposed transconductor are described. In a standard 0.6 μm CMOS technology and single 1.5 V supply, simulations show that the proposed transconductor futures a THD of −50 dB for 1.4 V_pp and 10 MHz input signal and −60 dB for 1.4 V_pp and 1 MHz signal where the threshold voltage of MOS transistors could be as high as 1 V. Based on the proposed transconductor, a lowpass filter with 700 kHz to 8 MHz programmable cutoff frequency and a bandpass 10.7 MHz second order filter were implemented. Armin Tajalli received the B.Sc. from Sharif University of Technology (SUT), Tehran, Iran, in 1997, and M.Sc. from Tehran Polytechnic University, Tehran, Iran, in 1999. From 1998 he has joint Emad Co. as a senior design engineer were he has worked on several industrial and R&D projects on analog and mixed-mode ICs. He received the award of the Best Design Engineer from Emad Co., 2001, the Kharazmi Award of Industrial Research and Development, Iran, 2002, and Presidential Award of the Best Iranian Researchers, in 2003. He is now working toward his PhD degree at SUT. His current interests are design of high speed circuits for telecommunication systems. Mojtaba Atarodi received the B.S.E.E. from Amir Kabir University of Technology (Tehran Polytechnic) in 1985, and M.Sc. degree in electrical engineering from the University of California, Irvine, in 1987. He received the Ph.D. degree from the University of Southern California (USC) on the subject of analog IC design in 1993. From 1993 to 1996 he worked with Linear Technology Corporation as a senior analog design engineer. Since then, he has been consulting with different IC companies. He is currently a visiting professor at Sharif University of Technology. He has published more than 30 technical papers in the area of analog and mixed-signal integrated circuit design as well as analog CAD tools.     

新型SMES-SFCL多功能组合装置

介绍了几种典型的基于超导储能(SMES)的超导电力组合装置,包括SMES-SPS(串联移相器),SMES-STATCOM(静止无功补偿器),SMES-UPFC(统一潮流控制器)以及SMES-SFCL(超导故障限流器).讨论了一种新型SMES-SFCL的多功能组合装置.该装置在限制一个系统短路电流的同时,可以对另一个独立系统进行电压调节.给出了该装置的拓扑结构和仿真结果,并对该装置的实际应用问题进行了讨论.     

一种基于负折射电路的宽带圆极化微带天线

 文章基于负折射电路原理,提出利用集总电容、电感加载构造得到宽带90度功分移相器,并提出了利用该功分移相器结合翻转容性馈电结构来拓展宽微带天线的阻抗带宽和轴比带宽的方法.设计并制作了工作频率为1.375GHz、轴比小于3dB的相对带宽为52.37%、在此频带内驻波比小于2的天线.     

BST-MEMS移相器开关

为了提高MEMS电容开关性能,介绍了移相器的一种新型结构——分布式电容周期性加载结构。分析发现移相器的相移度和单元可变电容的变化率有关。目前MEMS可变电容单元采用的介质基本上是氮化硅。BST薄膜作为一种性质优良的介电材料,其介电常数远大于氮化硅。从MEMS移相器开关性能的几个关键指标出发,探讨在MEMS移相器开关中,用BST薄膜代替氮化硅介质的可能性。     

基于ADuC841的水泥回转窑旋风筒控制系统设计

本文介绍了基于ADuC841的水泥回转窑旋风预热器控制系统的设计.该系统通过在旋风筒中安装各种传感器实时监控筒内的风量、风速、温度等状态,同时应用可控硅技术对旋风预热器中风机进行控制,得到所需要的理想风量,使得能更充分的利用水泥回转窑的尾气热能,同时也能减少水泥回转窑污染废气排放,利于环保要求.上位机采用图形化编程语言LabVIEW实现,界面友好,用户使用方便.模拟实验与现场运行验证了设计的有效性.     

微波功率测量中消除失配误差的方法

失配误差是微波功率测量中误差产生的重要原因之一。文中提出用一个90°移相器(即1/4波长传输线)消除这一误差的方法,先进行了理论分析,再用实验验证了此方法能使微波功率的测量误差大大下降,并且此方法还可作为信号源与功率计的功率传感器之间失配指标的鉴定方法,很有实用价值。     

抗振型移相干涉仪中PZT移相器的改进

结合移相式干涉仪主动抗振技术,提出对普通PZT光学移相器进行机械结构的优化,改善其机械响应性能并保证有足够的位移量.作为机电反馈式干涉仪抗振系统的核心部件,改进后的PZT构件用于干涉仪的移相驱动,同时又用作光学相位调制器和振动补偿器.经移相干涉仪的在线测量,PZT移相器达到了1 000 Hz(振动幅度为λ/2)以上的时间响应速度并获得了6 μm左右的位移量,满足了干涉抗振系统的需要.     

压电式移相器的研究

对压电式移相器进行了研究，设计了具有放大特性的柔性铰链式移相器。采用了神经网络PID自适应控制方法，改善了非线性，降低了环境干扰的影响，提高了压电式移相器的性能。     

高功率移相器的电子束封焊技术

研究了高功率移相器盒体与盖板的电子束封焊工艺技术。通过接头的结构设计解决了一次启盖返修问题;通过专用夹具的设计有效地控制了温升,经点温计测量最大温升不大于60℃;采用一条焊缝两次焊接工艺保证了焊缝的熔深要求,改善了焊缝质量,经氦质谱检漏仪测试,气密性优于1．013X10^-3Pa．cm^3／s的氦漏气率。该移相器已成功地应用于某雷达天馈系统。