| BST-MEMS移相器开关 |
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| 引用本文： | 邵雯雯,惠春,徐爱兰.BST-MEMS移相器开关[J].电子元件与材料,2004,23(10):20-22,26. |
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| 作者姓名： | 邵雯雯 惠春 徐爱兰 |
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| 作者单位： | 薄膜与微细技术教育部重点实验室,微米/纳米加工技术国家级重点实验室,上海交通大学微纳米学院,上海,200030 |
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| 基金项目： | 国防科技预研基金项目(00J7.1.2.DZ01) |
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| 摘 要： | 为了提高MEMS电容开关性能,介绍了移相器的一种新型结构——分布式电容周期性加载结构。分析发现移相器的相移度和单元可变电容的变化率有关。目前MEMS可变电容单元采用的介质基本上是氮化硅。BST薄膜作为一种性质优良的介电材料,其介电常数远大于氮化硅。从MEMS移相器开关性能的几个关键指标出发,探讨在MEMS移相器开关中,用BST薄膜代替氮化硅介质的可能性。
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| 关 键 词： | 电子技术 BST MEMS 移相器开关 氮化硅 分布式加载 |
| 文章编号： | 1001-2028(2004)10-0020-03 |
BST-MEMS Switches of the Phase Shifter |
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| SHAO Wen-wen,HUI Chun,XU Ai-lan.BST-MEMS Switches of the Phase Shifter[J].Electronic Components & Materials,2004,23(10):20-22,26. |
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| Authors: | SHAO Wen-wen HUI Chun XU Ai-lan |
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| Abstract: | Both emerging BST thin film technology and MEMS switch technology were investigated for enhancing RF-MEMS capacitive switches. A recently developed yet now widely accepted phase shifter topology, a distributed circuit,were analyzed. Based on the analysis, BST-MEMS switches were investigated to replace conventional SiN-based MEMS switches. Due to the higher permittivity of BST thin film, the ration of down-state capacitance and up-state capacitance is improved, and thus, in theory, MEMS switches using BST thin films as dielectric layers have better performance compared with conventional SiN-based MEMS switches. |
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| Keywords: | electronic technology BST MEMS switch phase shifter SiN distributed circuit |
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