硅表面自组织量子点形成机制的第一原理研究

用第一原理法对Ge/Si (113)表面的重构、表面能和表面应力及其随Ge沉积层数的变化情况进行了计算,分析了Ge/Si (001)自组织量子点DOME形成机制和稳定性.发现构成DOME的Ge/Si(113)表面在压应变条件下是能量非常低的稳定表面.Ge原子在Si(001)表面上自组织生长量子点时,首先形成HUT岛;当生长到相当于约4个(001)层厚时,Ge/Si (113)表面表现为(2×2)-TPI&R重构,并开始形成稳定的DOME岛.     

Novel two-step thermochemical cycle for hydrogen production from water using germanium oxide: KIER 4 thermochemical cycle

This paper proposes a novel two-step thermochemical cycle for hydrogen production from water using germanium oxide. The thermochemical cycle is herein referred to as KIER 4. KIER 4 consists of two reaction steps: the first is the decomposition of GeO₂ to GeO at approximately 1400–1800 °C, the second is hydrogen production by hydrolysis of GeO below 700 °C. A 2nd-law analysis was performed on the KIER 4 cycle and a maximum exergy conversion efficiency was estimated at 34.6%. Thermodynamic analysis of GeO₂ decomposition and hydrolysis of GeO confirmed the possibility of this cycle. To demonstrate the cycle, the thermal reduction of GeO₂ was performed in a TGA with mass-spectroscopy. Results suggest GeO₂ decomposition and oxygen gas evolution. To confirm the thermal decomposition of GeO₂, the effluent from GeO₂ decomposition was quenched, filtered and analyzed. SEM analysis revealed the formation of nano-sized particles. XRD analysis for the condensed-filtered particles showed the presence of Ge and GeO₂ phases. The result can be explained by thermodynamic instability of GeO. It is believed that GeO gas disproportionates to ½Ge and ½GeO₂ during quenching. 224 ml hydrogen gas per gram of reduced GeO₂ was produced from the hydrolysis reaction.     

脉冲激光烧蚀制备四方结构的橄榄球状Ge纳米颗粒

采用KrF脉冲准分子激光器烧蚀金刚石结构多晶Ge靶材, 选取合适的靶与衬底间的距离、氩气压力以及沉积时间, 在单晶Si(100)衬底上首次制备了四方结构的Ge纳米颗粒, 扫描电子显微镜表征显示这些Ge纳米颗粒有橄榄球状的外形. 透射电子显微镜和选区电子衍射结果显示, 这些橄榄球状的Ge纳米颗粒是四方结构的单晶. 而这些Ge纳米颗粒的形成是由于脉冲激光击打Ge靶产生的小的团簇在局域高温的作用下生成四方结构的团簇, 而这些四方结构的团簇和Ar气原子发生碰撞并聚集到一起形成橄榄球状Ge纳米颗粒.     

0.28-2.80 MeV质子辐射对空间实用GaInP/GaAs/Ge多结太阳电池性能的影响

用0.28、0.62和2.80 MeV质子束模拟空间辐射对国产MOCVD方法制备的GaInP/GaAs/Ge多结电池进行质子辐射效应研究.辐照注量为1×1012 cm-2.对电池的辐射效应用I-V特性和光谱响应测试进行分析.结果表明:随质子辐照能量的增加,太阳电池性能参数Isc,Voc,Pmax和光谱响应的衰降幅度均减小,0.28MeV质子辐照引起电池性能衰降最显著;低能质子辐照引起中间GaAs电池光谱响应衰降更明显.     

~(68)Ge/~(68)Ga发生器的临床应用

对新型~(68)Ge/~(68)Ga发生器的最佳淋洗时间、最佳峰段以及不同缓冲液对68 Ga显像及生物分布的影响进行研究,为动物实验和临床应用提供参考。采用4mL 0.05mol/L HCl淋洗740 MBq ITG~(68)Ge/~(68)Ga发生器,首次淋洗后分别隔2、4、6、8、10、12、14h再次淋洗,记录放射性活度;先以每段0.5mL收集淋洗液,在比活度较高段以每0.1mL收集淋洗液,记录放射性活度;分别用乙酸钠、NaOH、4-羟乙基哌嗪乙磺酸(HEPES)调节~(68)Ga~(3+)溶液pH,在正常小鼠体内行microPET显像。结果表明:在淋洗4h后,放射性活度可达平衡时的91%;最佳峰段为2~3 mL,放射性活度峰段的0.1 mL可收集22 MBq的~(68)Ga~(3+);~(68)Ga~(3+)在血液中摄取值高,1h仍有6.9%ID/g,表明游离的~(68)Ga~(3+)可能会影响图像的对比度,需要在标记放射性药物后去除残余的游离~(68)Ga~(3+);膀胱的放射性摄取高,提示~(68)Ga~(3+)通过泌尿系统排泄;乙酸钠、NaOH、HEPES调节pH后对~(68)Ga在正常小鼠体内显像及生物分布均无统计学差异(P0.05)。新型~(68)Ge/~(68)Ga发生器操作简便,每4h即可淋洗一次,淋洗液的峰段在2~3mL,建议临床采用乙酸钠缓冲液。     

Comparison of the top-down and bottom-up approach to fabricate nanowire-based silicon/germanium heterostructures

Silicon nanowires (NWs) and vertical nanowire-based Si/Ge heterostructures are expected to be building blocks for future devices, e.g. field-effect transistors or thermoelectric elements. In principle two approaches can be applied to synthesise these NWs: the ‘bottom-up’ and the ‘top-down’ approach. The most common method for the former is the vapour-liquid-solid (VLS) mechanism which can also be applied to grow NWs by molecular beam epitaxy (MBE). Although MBE allows a precise growth control under highly reproducible conditions, the general nature of the growth process via a eutectic droplet prevents the synthesis of heterostructures with sharp interfaces and high Ge concentrations. We compare the VLS NW growth with two different top-down methods: The first is a combination of colloidal lithography and metal-assisted wet chemical etching, which is an inexpensive and fast method and results in large arrays of homogenous Si NWs with adjustable diameters down to 50 nm. The second top-down method combines the growth of Si/Ge superlattices by MBE with electron beam lithography and reactive ion etching. Again, large and homogeneous arrays of NWs were created, this time with a diameter of 40 nm and the Si/Ge superlattice inside.     

Evolution of SiO2/Ge/HfO2(Ge) multilayer structure during high temperature annealing

Use of germanium as a storage medium combined with a high-k dielectric tunneling oxide is of interest for non-volatile memory applications. The device structure consists of a thin HfO₂ tunneling oxide with a Ge layer either in the form of continuous layer or discrete nanocrystals and relatively thicker SiO₂ layer functioning as a control oxide. In this work, we studied interface properties and formation kinetics in SiO₂/Ge/HfO₂(Ge) multilayer structure during deposition and annealing. This material structure was fabricated by magnetron sputtering and studied by depth profiling with XPS and by Raman spectroscopy. It was observed that Ge atoms penetrate into HfO₂ layer during the deposition and segregate out with annealing. This is related to the low solubility of Ge in HfO₂ which is observed in other oxides as well. Therefore, Ge out diffusion might be an advantage in forming well controlled floating gate on top of HfO₂. In addition we observed the Ge oxidation at the interfaces, where HfSiO_x formation is also detected.     

First-principles study on the formation of a vacancy in Ge under biaxial compressive strain

The effects of the biaxial compressive strain on the atomic relaxation and the formation energy of a neutral vacancy in Ge were investigated using first-principles calculations. Prior to this, the effects of the supercell size and Brillouin zone sampling were tested. The vacancy formation energy and atomic configuration around a vacancy are strongly affected by the inter-vacancy distance determined by the supercell size, due to the periodic boundary condition. The biaxial compressive strain reduced the formation energy of the vacancy nearly linearly by up to 1.34 eV as the magnitude of the biaxial compressive strain increased to the “Ge on Si (GoS)” condition. This was explained in terms of the bond strength characterized by the spatial electron density. The behavior of the vacancy in Ge was also compared with that in Si.     

Growth and characterization of germanium nanowires by electron beam evaporation

Germanium nanowires were grown on Au coated Si substrates at 380 °C in a high vacuum (5 × 10^− 5 Torr) by e-beam evaporation of Germanium (Ge). The morphology observation by a field emission scanning electron microscope (FESEM) shows that the grown nanowires are randomly oriented with an average length and diameter of 600 nm and 120 nm respectively for a deposition time of 60 min. The nanowire growth rate was measured to be ∼ 10 nm/min. Transmission electron microscope (TEM) studies revealed that the Ge nanowires were single crystalline in nature and further energy dispersive X-ray analysis (EDAX) has shown that the tip of the grown nanowires was capped with Au nanoparticles, this shows that the growth of the Ge nanowires occurs by the vapour liquid solid (VLS) mechanism. HRTEM studies on the grown Ge nanowire show that they are single crystalline in nature and the growth direction was identified to be along [110].     

GaAs/Ge太阳能电池用锗单晶的研究新进展

硅太阳能电池由于光电转换效率低和温度特性差等因素,最近几十年其在聚光光伏技术中并没有得到更大的发展,而砷化镓及相关Ⅲ-Ⅴ族化合物太阳能电池因其高光电转换效率而越来越受到关注,尤其是用于空间电源。目前国内外对太阳能电池的的研究主要集中在以锗晶片作基板的多结高效GaAs/Ge太阳能电池上,本文主要介绍了GaAs/Ge太阳能电池用锗单晶目前国内外的研究新进展,并对高效率太阳能电池用锗晶片的发展进行了展望。