Formation of ST12 phase Ge nanoparticles in ZnO thin films

In this work, we focus on the Ge nanoparticles (Ge-np) embedded ZnO multilayered thin films. Effects of reactive and nonreactive growth of ZnO layers on the rapid thermal annealing (RTA) induced formation of Ge-np have been specifically investigated. The samples were deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively on Si substrates. As-prepared thin film samples have been exposed to an ex-situ RTA at 600 °C for 60 s under forming gas atmosphere. Structural characterizations have been performed by X-ray Diffraction (XRD), Raman scattering, Secondary Ion Mass Spectroscopy (SIMS), and Scanning Electron Microscopy (SEM) techniques. It has been realized that reactive or nonreactive growth of ZnO layers significantly influences the morphology of the ZnO: Ge samples, most prominently the crystal structure of Ge-np. XRD and Raman analysis have revealed that while reactive growth results in a mixture of diamond cubic (DC) and simple tetragonal (ST12) Ge-np, nonreactive growth leads to the formation of only DC Ge-np upon RTA process. Formation of ST12 Ge-np has been discussed based on structural differences due to reactive and nonreactive growth of ZnO embedding layer.     

石墨炉原子吸收法测定饮用水中痕量锗

探讨了以硝酸钯为基体改进剂,用石墨炉原子吸收法直接测定饮用水中痕量锗的最佳仪器测量条件、方法原理、基体改进剂的用量、准确度、精密度、曲线线性系数、测定下限、线性范围等。结果表明该方法灵敏、准确、稳定性好,加标回收率为96%～105%。     

The GENIUS-test-facility—first results on background from Rn daughters

GENIUS-TF (Nucl. Instr. and Meth. A 511 (2003) 341; Nucl. Instr. and Meth. A 481 (2002) 149.) is a test-facility for the GENIUS project (GENIUS-Proposal, 20 November 1997; Z. Phys. A 359 (1997) 351; CERN Courier, November 1997, 16; J. Phys. G 24 (1998) 483; Z. Phys. A 359 (1997) 361; in: H.V. Klapdor-Kleingrothaus, H. Pas. (Eds.), First International Conference on Particle Physics Beyond the Standard Model, Castle Ringberg, Germany, 8–14 June 1997, IOP Bristol (1998) 485 and in Int. J. Mod. Phys. A 13 (1998) 3953; in: H.V. Klapdor-Kleingrothaus, I.V. Krivosheina (Eds.), Proceedings of the Second International Conference on Particle Physics Beyond the Standard Model BEYOND’ 99, Castle Ringberg, Germany 6–12 June 1999, IOP Bristol (2000) 915), a proposed large scale underground observatory for rare events which is based on operation of naked germanium detectors in liquid nitrogen for an extreme background reduction. Operation of naked Ge crystals in liquid nitrogen has been applied routinely already for more than 20 years by the CANBERRA Company for technical functions tests (CANBERRA Company, private communication, 5 March 2004.), but it never had found entrance into basic research. Only in 1997 first tests of application of this method for nuclear spectroscopy have been performed, successfully, in Heidelberg (Klapdor-Kleingrothaus et al., 1997, 1998; J. Hellmig and H.V. Klapdor-Kleingrothaus, 1997).

On May 5, 2003 the first four naked high-purity germanium detectors (total mass 10.52 kg) were installed in liquid nitrogen in the GENIUS Test Facility at the Gran Sasso underground laboratory. Since then the experiment has been running continuously, testing for the first time the novel technique in an underground laboratory and for a long-lasting period.

In this work, we present the first analysis of the GENIUS-TF background after the completion of the external shielding, which took place in December 2003. We focus especially on the background coming from ²²²Rn daughters. This is found to be at present by a factor of 200 higher than expected from simulation. It is still compatible with the scientific goal of GENIUS-TF, namely to search for cold dark matter by the modulation signal, but on the present level would cause serious problems for a full GENIUS—like experiment using liquid nitrogen.     

Si_（1－x）Ge_x／Si定向耦合器的研制

在运用ＳｉＧｅ脊形波导单模条件和有效折射率法分析ＳｉＧｅ／Ｓｉ定向耦合器结构参数的基础上，采用分子束外延和各向异性腐蚀技术制备出Ｓｉ１－ｘＧｅｘ／Ｓｉ（ｘ＝０．０５）单模定向耦合器．在波长为１．３μｍ时，平均串音小于－１８．１ｄＢ，输出功率耦合效率达到９８．１％     

Studies on the growth of CdTe on Si using ge interfacial layer in an organometallic vapor phase epitaxial system

Epitaxial CdTe layers were grown using organometallic vapor phase epitaxy on Si substrates with a Ge buffer layer. Ge layer was grown in the same reactor using germane gas and the reaction of germane gas with the native Si surface is studied in detail at low temperature. It is shown that germane gas can be used to “clean” the Si surface oxide prior to CdTe growth by first reducing the thin native oxide that may be present on Si. When Ge layer was grown on Si using germane gas, an induction period was observed before the continuous layer of Ge growth starts. This induction period is a function of the thickness of the native oxide present on Si and possible reasons for this behavior are outlined. Secondary ion mass spectrometry (SIMS) data show negligible outdiffusion and cross contamination of Ge in CdTe.     

Rapid thermal chemical vapor deposition of in-situ boron doped polycrystalline SIxGe1-x

In-situ doped polycrystalline Si_xGe_1-x (x = 0.7) alloys were deposited by rapid thermal chemical vapor deposition (RTCVD) using the reactive gases SiH₂Cl₂, GeH₄ and B₂H₆ in a H₂ carrier gas. The depositions were performed at a total pressure of 4.0 Torr and at temperatures 600° C, 650° C and 700° C and different B₂H₆ flow rates. The conditions were chosen to achieve high doping levels in the deposited films. Our results indicate negligible effect of B₂H₆ flow on the deposition rate. The depositions follow an Arrhenius type behavior with an activation energy of 25 kcal/mole. Boron incorporation in the films was found to follow a simple kinetic model with higher boron levels at lower deposition rates and higher B₂H₆ flow rates. As-deposited resistivities as low as 2 mΩ-cm were obtained. Rapid thermal annealing (RTA) in the temperature range 800-1000° C was found to reduce the resistivity only marginally due to the high levels of boron activation achieved during the deposition process. The results indicate that polycrystalline Si_xGe_1-x films can be deposited by RTCVD with resistivities comparable to those reported for in-situ doped polysilicon.     

Growth and characterization of GaAs films deposited on Ge/Si composite substrates by metalorganic chemical vapor deposition

We report the results of studies which have been made on heteroepitaxial layers of GaAs and AlGaAs grown by metalorganic chemical vapor deposition on composite substrates that consist of four different types of heteroepitaxial layered structures of Ge and Ge-Si grown by molecular beam epitaxy on (100)-oriented Si substrates. It is found that of the four structures studied, the preferred composite substrate is a single layer of Ge ∼1 μm thick grown directly on a Si buffer layer. The double-crystal X-ray rocking curves of 2 μm thick GaAs films grown on such substrates have FWHM values as small as 168 arc sec. Transmission electron micrographs of these Ge/Si composite substrates has shown that the number of dislocations in the Ge heteroepitaxial layer can be greatly reduced by an anneal at about 750° C for 30 min which is simultaneously carried out during the growth of the GaAs layer. The quality of the GaAs layers grown on these composite substrates can be greatly improved by the use of a five-period GaAs-GaAsP strained-layer superlattice (SLS). Using the results of these studies, low-threshold optically pumped AlGaAs-GaAs DH laser structures have been grown by MOCVD on MBE Ge/Si composite substrates.     

只读式超分辨光盘的膜层设计和分析

超分辨技术是一种无需减小记录波长或增大数值孔径而提高存储密度的方法。Ge Sb Te是一种良好的相变光存储材料 ,在超分辨光盘中可作为掩膜。利用多层膜反射率的矩阵法计算了掩膜为Ge2 Sb2 Te5薄膜的超分辨只读式光盘的光学参数与各膜层厚度之间的关系 ,最后得到了较为理想的膜层厚度匹配。采用磁控溅射法制备了只读式超分辨光盘 ,测量了光盘的光学性质。     

空气中^131I的取样和测量方法的研究

本文介绍一种气态和气载~(131)I 取样器。着重介绍了一种指数分布源的效率刻度方法,讨论了与取样有关的一些问题。     

Advances in ALCHEMI analysis

The ALCHEMI method for locating the sites of foreign atoms within crystals is known to be sensitive to the delocalized emission of X-rays. This can result in large errors in some cases through differences in delocalization for different excitations or by error amplification in the ratio method of analysis. An alternative approach to the analysis of ALCHEMI data, using multivariate statistical analysis, is extended to the case of multiple impurities. Initial results from zone-axis channelling experiments for a Yb-doped zirconolite (CaZrTi₂O₇) are shown to confirm the improved accuracy of this method, especially for axial orientations. Data were collected using a 400-keV analytical electron microscope fitted with an intrinsic Ge X-ray detector. The potential advantages for ALCHEMI analysis of Ge detectors are considered.