污泥基生物炭处理酸性含U(Ⅵ)废水的效能与机理

通过城市污泥（SS）慢速热解制备污泥基生物炭（SSB），并研究初始pH、投加量、共存离子、吸附时间和温度等因素对SSB去除U(Ⅵ)的影响，探讨吸附动力学和吸附等温线特征。通过元素分析、扫描电镜（SEM）、傅里叶红外光谱（FTIR）、X射线衍射（XRD）和X射线光电子能谱（XPS）分析U(Ⅵ)吸附去除的机理。结果表明SSB去除U(Ⅵ)的适宜条件为：pH=3、投加量1 g/L、吸附时间240 min；在此条件下，在温度30℃时最大吸附量为34.51 mg/g。吸附动力学符合拟二级动力学模型；Langmuir吸附等温模型能更好描述生物炭对U(Ⅵ)的吸附行为。U(Ⅵ)吸附去除机理主要包括静电作用，与Si—O—Si的n-π相互作用，与羟基（—OH）、羧基（—COOH）的配位络合。通过5次吸附-解吸试验发现，U(Ⅵ)去除率和SSB再生率均在80%以上。本研究表明污泥基生物炭具备处理与修复酸性含U(Ⅵ)废水污染的潜力。     

Oxidation mechanisms in bulk Ti2AlC: Influence of the grain size

In this work, oxidation mechanisms were studied in fine-grained (FG) and coarse-grained (CG) Ti₂AlC bulk samples. Results showed that the oxidation kinetics are controlled by the grain size of Ti₂AlC. Bigger are the grains, faster is the oxidation. A dense and protective Al₂O₃ layer forms at the surface of FG-Ti₂AlC samples while for the CG-Ti₂AlC samples, a thick TiO₂ layer forms on top of a discontinuous Al₂O₃. CG-Ti₂AlC was observed to simultaneously transform into Ti₃AlC₂ and TiC instead of being directly transformed into TiC. This transformation result in the following crystallographically sandwich-like structure: (0001) Ti₂AlC // (0001) Ti₃AlC₂ // (111) TiC. The volume shrinkage associated to this transformation produces elongated holes that are partially filled by α-Al₂O₃. The stress caused by the volume shrinkage generates cracks at the surface, which makes the oxygen inwards diffusion easier and thus worsens the oxidation resistance the CG-Ti₂AlC bulk.     

Pyrochlore doped Pr2Sn2O7 ceramics: Electronic transport properties and high NO2 sensitivity

This work proposed pyrochlore doped-Pr₂Sn₂O₇ ceramics with electronic transport and NO₂ sensitivity through molecular insights into sensing mechanism by DFT. NO₂ adsorbed on the p-type semiconductor metal oxide NiO(100) can be decomposed into three stable adsorbed states NO₂, NO and O that will obtain electrons from the NiO valence band to form N₂ (or N₂O) and O²⁻, resulting in an increase of the holes concentration. The results suggest that the response current value of the sensor based on Pr₂Sn₂O₇ doped by Ca²⁺ at A site is 53.5 times higher than that of commercial YSZ, indicating high sensitivity with 420 nA/ ppm at mild temperature 550 °C. Besides the creation of oxygen-defect sites, the electronic transport is responsible for the improved sensing properties. The electrons on doped Pr₂Sn₂O₇ ceramics can complement the hole-accumulation layer and make NO₂, NO, O accept electrons quickly to accelerate the rate of the electrochemical cyclic reaction.     

含芳香氨基酸三肽及其衍生物自由基离子的形成和解离机理研究

铜-配体(L)-三肽组成的三元复合物［Cu(L)M］²⁺，其中，L表示4′-氯-2,2′:6′,2″-三联吡啶(缩写为4Cl-tpy)；M表示酪氨酰-甘氨酰-色氨酸(YGW)及其修饰型三肽(CH₃CO-YGW-OCH₃，缩写 Ac-YGW-OMe)。使用该复合物，通过碰撞诱导解离 (collision-induced dissociation, CID)产生两种自由基离子 (［YGW］^·+和［Ac-YGW-OMe］^·+)。采用串联质谱结合密度泛函理论 (density functional theory, DFT)得到气相稳定结构，并研究其气相解离行为。研究结果表明，［YGW］^·+和［Ac-YGW-OMe］^·+的气相解离行为截然不同，［YGW］^·+主要产生［M-CO₂-116］⁺和［M-CO₂］^·+碎片离子；而［Ac-YGW-OMe］^·+在气相中主要产生［M-CH₃OH］^·+碎片离子。推测这两种离子的气相裂解机理分别为：［YGW］^·+羧基上的质子重排到多肽骨架中羰基氧上，经历 C_α-C键的断裂产生［M-CO₂］^·+、断裂色氨酸侧链 C_β-C_γ键产生［M-CO₂-116］⁺离子；［Ac-YGW-OMe］^·+则先经历质子重排到酯基氧上，然后经过C-O酯键的断裂形成［M-CH₃OH］^·+离子。参与重排的质子可能有3个来源：Ac-YGW-OMe中甘氨酸的C_α-H、色氨酸的C_α-H 或C_β-H，该机理有待进一步验证。本研究将为其他类型多肽及衍生物的结构及气相反应机理研究提供参考。     

[学科发展]机构学中机构重构的理论难点与研究进展——变胞机构演变内涵、分岔机理、设计综合及其应用

生产力发展与工程技术革新要求机构具备可自重组与可重构及“一机多用”的功能，以满足复杂工况需求。可重构机构具有可变活动度和可变构态，可以满足多任务、多工况与多功能的要求，然而，决定其设计方法的演变内涵与分岔机理的研究目前仍不为学者们充分了解。从变胞机构的演变与分岔机理的角度，以旋量理论、李群与李代数及微分流形为主要工具，揭示了机构演变内涵及运动与约束空间的内在关联关系；探究了机构演变中的分岔机理与可控奇异位形，回顾了变胞机构与折纸及折展机构的历史渊源，综述了变胞机构的构型设计、性能综合与新型设计理念及其创新应用。     

防止输送带打滑的新方法

针对目前输送带打滑的问题,通过对输送带打滑原理的分析,要想解决输送带的打滑,就需要动态调整输送带的张力。基于此设计了一种短距离输送机的输送带自动张紧装置,该装置通过2个电液推杆来张紧输送带,并给出了具体的自动控制策略,能很好地解决输送带打滑问题。     

Gliding arc plasma reforming of toluene for on-board hydrogen production

Hydrogen is considered as a clean and promising fuel, and hydrogen production on-board has attracted widespread research attention. In this work, a gliding arc discharge (GAD) plasma reactor was utilized to reform toluene at room temperature and atmosphere pressure. The performance of hydrogen production through oxidative reforming with toluene as raw material under different input power, oxygen to carbon molecular ratio (O/C), residence time and argon addition was investigated. The optimal yields of H₂ and CO (48.6% and 44.3%) were obtained under the condition of the input power of 32 W, the O/C of 0.68, the residence time of 18.4 s and 10 vol% Ar addition. By analyses of spectrum lines and GC-MS, the plasma reforming mechanism of toluene was proposed. It is believed that N₂(B³Πg) and Ar* could increase the formation of reactive oxygen species (O⁺, O (¹D), O and so on), and N₂(B³Πg) could impact directly the reforming of toluene.     

古建筑木结构透榫节点力学模型研究

为研究古建筑木结构透榫节点的M-θ力学模型，在分析透榫节点构造特征与受力机理的基础上，建立其数值模型，用透榫节点的试验数据验证了该数值模型的正确性，并分析了节点缝隙、木材横纹弹性模量和大榫头长度对透榫节点受弯承载力的影响。根据受力分析结果，建立以弹性点、屈服点与极限点为特征点的三折线多参数M-θ力学模型，其结果与多数的试验结果基本吻合，并将该力学模型应用于木构架的受力分析。研究结果表明：透榫节点的滞回耗能能力强，节点的变形主要集中在榫头处。当榫头与卯口之间的缝隙增大时，节点的受弯承载力降低。随木材横纹弹性模量的提高和大榫头长度的增加，节点的受弯承载力有一定提高。文章建立的M-θ力学模型能较好反映透榫节点的受力过程，适用于木构架的受力分析，其荷载 位移骨架曲线与试验结果基本吻合。研究成果可为古建筑木结构的维修与保护提供参考。     

microRNA在亨廷顿病中的研究进展

亨廷顿病(Huntington's disease, HD)是神经退行性疾病(neurodegenerative disorders)中一种单基因遗传病,由亨廷顿基因(the huntingtin gene, HTT)第一个外显子中的CAG三核苷酸序列重复扩增引起,尚无法治愈。HTT编码的蛋白产物被称为亨廷顿蛋白(Huntingtin protein, Htt)。突变亨廷顿蛋白(mutated huntingtin protein, mHtt)容易形成聚集体,具有毒性,导致一系列细胞学异常和神经元功能障碍。microRNA(miRNA)在基因转录后水平调控中起重要作用,其表达的改变与HD病理过程有关,成为治疗HD的潜在生物标志物。近年来,对一些特定miRNA在HD中调控机制及靶基因预测方面的研究可为HD提供潜在的治疗方法。本文就miRNA在HD中的相关研究进展进行综述。     

Electric field dependence of ferroelectric stability in BiFeO3 thin films co-doped with Er and Mn

Bi_0.9Er_0.1Fe_1−xMn_xO₃ (BEFM_xO, x = 0.00–0.03) films are synthesized by a sol–gel technique. The BEFO film exhibits a conduction mechanism based on electron tunneling. The high applied electric field causes dissociation of the defect complex, and the resulting oxygen vacancies contribute to fake polarization. Consequently, the BEFO film has poor polarization stability at high applied electric fields. Coexistence of two phases (with space groups R3c:H and R3m:R) and reduced concentrations of oxygen vacancies and Fe²⁺ in BEFM_xO are achieved by co-doping with Er and Mn. The presence of bulk-based conduction in the BEFM_xO films then leads to ferroelectric domain switching contributing to the real polarization and to excellent ferroelectric stability. In addition, the BEFM_0.02O film shows a typical symmetrical butterfly curve, the highest remnant polarization of ~109 μC/cm², and the highest switching current of ~1.66 mA. It also has the smallest oxygen vacancy concentration and thus the smallest amount of defect complex, which means that there are fewer pinning effects on ferroelectric domains and therefore excellent ferroelectric stability. This excellent ferroelectric stability makes the BEFM_xO films obtain good stability and reliability in the application of ferroelectric memory devices.