复合绝缘子压接界面的性能监测及机械性能分析

根据复合绝缘子压接界面结构的特点，提出声发射装置是监测组装性能的有效手段；对关键部件组装施压时的安全裕度和关键部位在额定拉伸应力下的安全性进行了分析；得出了产品在长期运行过程中环境温度变化对其结构的机械性能影响不大和机械蠕变性可以被忽略的结论。     

支柱绝缘子表面电场分布特性研究

为研究支柱绝缘子表面电场分布特性,经理论分析建立其有限元计算模型,获得了工程设计中所关心部位的电场强度分布。计算了3种典型支柱绝缘子理想情况下表面电场强度分布,并与增爬裙计算结果进行比较分析,结果表明,绝缘子两端电场强度较大,中间部位较低;增爬裙对其电场强度分布的改善没有明显的作用,电力线走向发生一定改变。     

高海拔地区直流绝缘子不同悬挂方式污闪特性

为研究不同悬挂方式对直流盘型绝缘子污闪特性的影响,给特高压输电线路绝缘配置提供试验依据,在高海拔地区(昆明,海拔1 970 m)对XZP1-300和XZPS-300进行了不同悬挂方式(I、V及Y串)下的人工污秽试验,其中V串包括了60°、90°和120°3种角度;Y串上部夹角为90°。通过对高速摄影仪拍摄的放电发展过程的分析,揭示了悬挂方式、绝缘子形状、盐密等因素对电弧发展的影响,并解释各种情况下污闪电压不同的原因。推荐在重污秽条件下用V型串,轻污秽条件下使用I型串。     

新型SiO2栅介质非晶硅薄膜晶体管室温红外探测器

对用作室温红外探测敏感单元的非晶硅薄膜晶体管进行了研究，提出了一种新型SiO2栅介质非晶硅薄膜晶体管室温红外探测器。该探测器的基本工作机理与传统的SiNx栅介质薄膜晶体管相类似，但在器件性能方面不仅具有较高的响应度，而且具有更好的温度稳定性；在制作工艺方面具有更高的工艺重复性和栅介质淀积的均匀性。     

电瓷绝缘子铝合金法兰材质及热处理工艺研究

对高压电瓷绝缘子铝合金法兰材质及热处理工艺进行了研究，结果表明，选择合理的材料成分和热处理工艺，并改善热处理炉温度场的分布，可获得高强度铝合金法兰。     

粉末丁苯橡胶的中试研究

将丁苯胶乳(SBR)、预处理剂、多元隔离剂、复配型防老剂、脱盐水等，按配方加入7.8m^3凝聚釜中，在一定的温度下，喷入凝聚剂(一价金属盐溶液)。当凝聚过程出现明显絮凝时，再一次喷入凝聚剂(二价金属盐溶液)，待胶乳凝析完全后，升温并加入成型剂。经恒温处理的淤浆，降温排入淤浆槽，并加入防粘剂。淤浆经离心、洗涤、脱水，形成SBR滤饼，然后通过研磨机研磨，进入旋转闪蒸干燥器干燥，即制得粉末丁苯橡胶产品。产品收率超过90％，水分不超过1．5％，98．5％的产物粒径小于1.25mm。     

Investigation of the nonlinearity properties of the DC I-V characteristics of metal-insulator-metal (MIM) tunnel diodes with double-layer insulators

The DC I-V characteristics of metal-insulator-metal (MIM) tunnel diodes with double insulator layer is investigated by means of computer simulations. Simulation results on the properties of the diode characteristics such as resistance and quality factor are presented in various diagrams and the dependences on the different diode parameters are discussed. The simulations algorithm applied is also described in brief.     

Photoinduced Colossal Magnetoresistance under Substantially Reduced Magnetic Field

The colossal magnetoresistive insulator to metal switching of almost nine orders of magnitude under the significantly reduced magnetic field is achieved by illumination for the low bandwidth manganite thin films. Similarly, by changing the measuring bias voltage through the sample the required magnetic field for insulator–metal transition can be further fine‐tuned. By applying a magnetic field of suitable strength, the samples can also be tuned to be extra sensitive to the illumination having colossal effect on the resistivity at low temperatures. This kind of utilizing of multiple external stimulants, which together change the properties of the material, could have significant impact on the new generation of phase‐change memories working under affordable conditions.     

不同温度长时间作用下SiO_2气凝胶结构和性能的变化

针对SiO2气凝胶高温结构变化规律对隔热性能的影响,在500℃,600℃,700℃和800℃不同时间(0~12h)作用下,对热处理后的SiO2气凝胶结构和组成进行测试和分析;结果表明,500℃,600℃条件下,随着时间的延长,重量损失和厚度上的收缩略微增大,体积密度不变;700℃和800℃条件下,随着时间的延长,厚度上的收缩逐渐增加,体积密度逐渐增大,重量损失增大。在200~1200℃时,对热处理0.5h后的SiO2气凝胶结构和组成进行测试和分析。结果表明:当热处理温度为200~800℃时,气凝胶中小孔隙坍塌,大孔隙增多,密度基本不变,其骨架结构未被破坏;二次堆积颗粒逐渐增大且相互融合,密度急剧增加;当热处理温度达到1000~1200℃时,气凝胶骨架结构遭到明显破坏,隔热性能失效。     

Photoluminescence response of colloidal quantum dots on VO2 film across metal to insulator transition

We have proposed a method to probe metal to insulator transition in VO₂ measuring photoluminescence response of colloidal quantum dots deposited on the VO₂ film. In addition to linear luminescence intensity decrease with temperature that is well known for quantum dots, temperature ranges with enhanced photoluminescence changes have been found during phase transition in the oxide. Corresponding temperature derived from luminescence dependence on temperature closely correlates with that from resistance measurement during heating. The supporting reflectance data point out that photoluminescence response mimics a reflectance change in VO₂ across metal to insulator transition. Time-resolved photoluminescence study did not reveal any significant change of luminescence lifetime of deposited quantum dots under metal to insulator transition. It is a strong argument in favor of the proposed explanation based on the reflectance data.

PACS

71.30. + h; 73.21.La; 78.47.jd