Synthesis,characterization and charge transport properties of Pr–Ni Co-doped SrFe2O4 spinel for high frequency devices applications

Ferrites are materials of interest due to their broad applications in high technological devices and a lot of research has been focused to synthesize new ferrites. In this regard, an effort has been devoted to synthesize spinel Pr–Ni co-substituted strontium ferrites with a nominal formula of Sr_1-xPr_xFe_2-yNi_yO₄ (0.0 ≤ x ≤ 0.1, 0.0 ≤ y ≤ 1.0). The cubic structure of pure and Pr–Ni co-substituted strontium ferrite samples calcinated at 1073 K for 3 h has been confirmed through X-ray diffraction (XRD). Average sizes of crystallites (18–25 nm) have been estimated from XRD analysis and nanometer particle sizes of synthesized ferrites have been further verified by scanning electron microscopy (SEM). SEM results have also shown that particles are mostly agglomerated and all the samples possess porosity. It has been observed that at 298 K, the values of resistivity (ρ) increase, while that of AC conductivity, dielectric loss, and dielectric constants decrease with increasing amounts of Pr³⁺ and Ni²⁺ ions. The values of dielectric parameters initially decrease with frequency and later become constant and can be explained on the basis of dielectric polarization. Electrochemical impedance spectroscopy (EIS) studies show that the charge transport phenomenon in ferrite materials is mainly controlled via grain boundaries. Overall, synthesized ferrite materials own enhanced resistivity values in the range of 1.38 × 10⁹–1.94 × 10⁹ Ω cm and minimum dielectric losses, which makes them suitable candidates for high frequency devices applications.     

Structural,electrical, and linear/nonlinear optical characteristics of thermally evaporated molybdenum oxide thin films

Homogeneous thin films of Molybdenum oxide (MoO₃) were grown on quartz and glass substrates using the thermal evaporation method. XRD results showed that the MoO₃ powder has a polycrystalline structure with an orthorhombic crystal system whereas the MoO₃ thin films have amorphous nature. SEM images showed that the MoO₃ thin films have a nearly uniform surfaces with worm-like shape grains. The film thickness influences on the linear and nonlinear optical characteristics of MoO₃ thin films that were examined using spectrophotometric measurements and from which, the linear optical constants of the MoO₃ thin films were estimated. The electronic transition type was determined as a direct allowed one. The values of the optical band gap were obtained to be in the range of 3.88–3.72 eV. The dispersion parameters, third-order nonlinear optical susceptibility, and the nonlinear refractive index of the MoO₃ thin films were determined and interpreted in the light of the single oscillator model. The temperature dependence of the DC electrical conductivity and the corresponding conduction mechanism for the MoO₃ films were investigated at temperatures ranging from 303 to 463 K.     

Digital hysteresis sliding mode control for interleaved DC–DC converters

This paper presents a digital constant frequency sliding mode control (SMC) law for interleaved DC–DC converters. Constant switching frequency and interleaving are achieved by dynamically adjusting the hysteresis of the control signals generating comparators. The interleaving method neither imposes constraints on the number of required phases to obtain a specific output voltage nor uses quasi-SMC. Hence, the control scheme achieves high flexibility, robustness, and performance. Furthermore, a sliding mode observer (SMO) for reconstructing the inductor currents is proposed. Experimental results for a two-phase buck converter are reported. The control concept accomplishes an improved dynamic performance in comparison with quasi-SMC.     

基于STM32的开环霍尔电流传感器的温度补偿研究

研究了一种基于软件补偿结合恒流源补偿的改进温度补偿方法,应用单片机、恒流源、数字温度传感器、乘法器等硬件电路,对传统软件补偿进行了优化,补偿效果较传统恒流源补偿有了明显提升,“温漂”整体下降了约13.7%。在传统的温度补偿方法如热敏元件补偿、恒流源补偿、软件补偿等方式上做了补充,对于霍尔电流传感器精度的提升及实际生产需求的满足有重要意义。     

Three-phase four-wire shunt active power filter based on the SOGI filter and Lyapunov function for DC bus control

The three-phase four-wire shunt active power filter (SAPF) was developed to suppress the harmonic currents generated by nonlinear loads, and for the compensation of unbalanced nonlinear load currents, reactive power, and the harmonic neutral current. In this work, we consider instantaneous reactive power theory (PQ theory) for reference current identification based on the following two algorithms: the classic low-pass filter (LPF) and the second-order generalized integrator (SOGI) filter. Furthermore, since an important process in SAPF control is the regulation of the DC bus voltage at the capacitor, a new controller based on the Lyapunov function is also proposed. A complete simulation of the resultant active filtering system confirms its validity, which uses the SOGI filter to extract the reference currents from the distorted line currents, compared with the traditional PQ theory based on LPF. In addition, the simulation performed also demonstrates the superiority of the proposed approach, for DC bus voltage control based on the Lyapunov function, compared with the traditional proportional-integral (PI) controller. Both novel approaches contribute towards an improvement in the overall performance of the system, which consists of a small rise and settling time, a very low or nonexistent overshoot, and the minimization of the total harmonic distortion (THD).     

撞击流反应器撞击面稳定性研究进展

撞击流技术因其良好的混合特性近些年用于强化制备超细粉体反应中的混合过程。撞击面的稳定影响反应器内的混合效果，所以本文对撞击面稳定性的研究进行了综述。撞击流反应器不同结构形式包括平面撞击流、轴对称撞击流和微型撞击流等。文中简述了撞击流稳定性的实验研究手段，分析轴对称撞击流反应器的径向偏转振荡的起止条件和不同喷嘴间距下的轴向偏移振荡规律，并且分析平面撞击流反应器的撞击面偏转周期以及偏转振荡的起止条件。得出轴对称撞击流与平面撞击流撞击面驻点的振荡对混合都有促进作用，并且偏移振荡周期不定，轴对称撞击面偏移振幅与喷嘴间距和雷诺数相关。平面撞击流的偏转振荡周期与进口流速成反比，反应器结构参数是撞击流稳定性的影响因素之一。根据轴对称撞击流偏移振荡对混合的促进作用，本文提出一种新型的预设流量波形双组撞击流反应器。新型撞击流反应器的独特结构克服了物料反应通道单一缺点，通过预设波形控制其进口流量，增大其撞击面偏移振幅，消除撞击面无序振荡，使流动轨迹扩展，扩大混合区域，并设计实验装置与方法讨论动态流量撞击流反应器撞击面稳定性对混合效果的影响。最后，本文对轴对称撞击流反应器的混合性能研究前景进行展望。     

可调偏迈步式胶带自移机尾的研究

随着掘进工作面自动化程度的提高,掘进巷道速度也在日益加快,而现有的顺槽皮带机机尾移动缓慢且移动时工作量大,需要两三人配合操作,存在一定的安全隐患。针对以上问题,研发可调偏迈步式胶带自移机尾,具有与悬挂二运皮带转载机搭接行程长,可以迈步式前进,自动调偏等功能,同时,可以降低工人的劳动强度,加快巷道掘进速度。     

基于ＰＩＤ控制算法的直流微网容错控制方法研究

构建直流微网容错控制对象模型，调节直流微电网的输出回路参数；以输出功率、直流微网的 参考电压、弱电网下系统惯性响应特征等为约束参量，构建直流微网容错控制目标函数，在不同电网强度下 进行直流微网容错控制的参数自整定性调节，采用无功环比例积分控制方法进行直流微网容错寻优分析， 建立模糊 ＰＩＤ控制模型，采用变结构的模糊 ＰＩＤ控制方法进行直流微网容错控制过程中的自适应加权学习 和误差反馈调节，实现直流微网容错控制改进设计。仿真结果表明，采用该方法进行直流微网控制的容错 性能较好，输出稳定性较强，具有较好的直流微网输出增益。     

Structural,electrical, optical and dielectric properties of yttrium substituted cadmium ferrites prepared by Co-Precipitation method

The yttrium substituted cadmium ferrites having composition Cd_1-xY_xFe₂O₄ (X = 0.00, 0.125, 0.250, 0.375, 0.500) were synthesized by the co-precipitation method and sintered at 1100 °C for 6 h. Structural, morphological, electrical, optical and dielectric characteristics were explored by XRD, SEM, EDS, FTIR, I–V two probes, UV–Vis and LCR techniques.XRD results confirmed the cubic structure of spinel ferrites. A decrease in lattice constants of the prepared samples was observed with the substitution of Y ions and was attributed to the difference in ionic radii of Y³⁺ (0.95 Å) and Cd²⁺ (0.97 Å) ions. Cationic distributions, ionic radii of both tetrahedral and octahedral sites, tolerance factor, oxygen positional parameters, bond lengths, interatomic distances, positional parameters and bond length angles were calculated from XRD data. The morphology of the prepared ferrites was studied using SEM and results ratified the XRD results. EDS confirmed the presence of all inserted elements in Cd_1-xY_xFe₂O₄ composition. DC resistivity and drift mobility of soft-ferrites were found to be increased from 1.047 × 10⁸–4.822 × 10¹⁰ Ω-cm and 5.87 × 10⁻¹² – 1.045 × 10⁻¹⁴ cm²V⁻¹s⁻¹, respectively, at 523 K with yttrium content confirming the behavior of semiconductor materials. The optical band gap energy calculated from the UV–Vis pattern of the Cd_1-xY_xFe₂O₄ system was decreased from 3.6011 to 2.8153 eV. DC resistivity and optical band gaps exposed inverse relation. FTIR results revealed lower and upper-frequency absorption bands in the ranges of 419.31–417.01 cm⁻¹ and 540.95–565.70 cm⁻¹, respectively. Dielectric constant and dielectric losses were in decreasing order, while ac conductivity revealed rising behavior with increasing frequency. Results showed the potential of yttrium doped Cd nanoferrites for applications in high-frequency microwave absorbing devices.