Investigation of corrosion properties with Ni–P/TiNO coating on aluminum alloy bipolar plates in proton exchange membrane fuel cell

Aluminum alloy bipolar plates have unique application potential in proton exchange membrane fuel cell (PEMFC) due to the characteristics of lightweight and low cost. However, extreme susceptibility to corrosion in PEMFC operation condition limits the application. To promote the corrosion resistance of aluminum alloy bipolar plates, a Ni–P/TiNO coating was prepared by electroless plating and closed field unbalanced magnetron sputter ion plating (CFUMSIP) technology on the 6061 Al substrate. The research results show that Ni–P interlayer improves the deposition effect of TiNO outer layer and increase the content of TiN and TiO_xN_y phases. Compared to Ni–P and TiNO single-layer coatings, the Ni–P/TiNO coating samples exhibited the lowest current density value of (1.10 ± 0.02) × 10^?6 A·cm^?2 in simulated PEMFC cathode environment. Additionally, potential cyclic polarization measurements were carried out aiming to evaluate the durability of the aluminum alloy bipolar plate during the PEMFC start-up/shut-up process. The results illustrate that the Ni–P/TiNO coating samples exhibit excellent stability and corrosion resistance.     

Measurement and Identification of the Parameters of SPICE-Models of a Bipolar Transistor

A method of measuring and identifying the static parameters of a bipolar transistor is considered. The characteristic of the transistor, from which the parameters of the model are determined, is chosen depending on what group the calculated parameters belong to. The characteristics are measured in such a way that the equations of the model describing them can be reduced to the simplest form.     

微纳级双极晶体管的热耗散研究

对于双极性晶体管,由于自身存在的自加热现象,严重地影响着器件的特性。基于热电流方程、泊松方程及电流密度方程,在二维器件仿真环境下,进行了微纳级小尺寸npn双极性晶体管热现象的器件物理特性分析。重点研究了器件的集电极电流IC与晶格温度T的因变关系。研究结果显示,随着IC的增加,器件的晶格温度逐渐升高,VCE保持在3.0V、VBE达到最大值0.735V时,随器件晶格温度的升高VBE将减小。最后,笔者给出了描述晶体管温变关系的三维曲线。     

A goal-striving life event and the onset of hypomanic and depressive episodes and symptoms: Perspective from the Behavioral Approach System (BAS) dysregulation theory.

On the basis of the behavioral approach system (BAS) dysregulation theory of bipolar disorder, this study examined the relation between occurrence of a BAS activation-relevant life event--goal striving--and onset of hypomanic and depressive episodes and symptoms. In particular, the authors examined the relation between preparing for and completing final exams (a goal-striving event) and onset of bipolar spectrum episodes and symptoms in college students with bipolar II disorder or cyclothymia (i.e., "soft" bipolar spectrum conditions). One hundred fifty-nine individuals with either a bipolar spectrum disorder (n=68) or no major affective psychopathology (controls; n=91) were further classified on the basis of whether they were college students (i.e., completed final exams). Consistent with the BAS dysregulation theory, preparing for and completing final exams was associated with an increase in hypomanic but not depressive episodes and symptoms in individuals with a soft bipolar spectrum diagnosis. Furthermore, self-reported BAS sensitivity moderated the presence of certain hypomanic symptoms during final exams. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

SOI全介质隔离与高频互补双极兼容工艺

ＳＯＩ材料的全介质隔离技术与高频互补双极工艺的结合是研制抗辐照能力强、频带宽、速度高的集成运算放大器的理想途径，从实验的角度提出了一种ＳＯＩ材料全介质隔离与高频互补双极工艺兼容的工艺途径。     

CMOS电路中抗Latch-up的保护环结构研究

闩锁是CMOS集成电路中的一种寄生效应,这种PNPN结构一旦被触发,从电源到地会产生大电流,导致整个芯片的失效。针对芯片在实际测试中发现的闩锁问题,介绍了闩锁的测试方法,并且利用软件Tsuprem4和Medici模拟整个失效过程,在对2类保护环(多子环/少子环)作用的分析,以及各种保护结构的模拟基础之上,通过对比触发电压和电流,得到一种最优的抗Latch up版图设计方法,通过进一步的流片、测试,解决了芯片中的闩锁失效问题,验证了这种结构的有效性。     

Behavioral Phenotype of the Reeler Mutant Mouse: Effects of Reln Gene Dosage and Social Isolation.

Reeler (rl/rl) and reeler/wild-type (+/rl) mice synthesize Reln at subnormal rates, as do patients with schizophrenia, bipolar disorder, and autism, thereby forming the basis for a Reln hypothesis for vulnerability to these psychopathologies and justifying attention to the behavioral phenotypes of Reln-deficient mice. Tests of gait, emotionality, social aggression, spatial working memory, novel-object detection, fear conditioning, and sensorimotor reflex modulation revealed the behavioral phenotype of rl/rl, but not +/rl, mice to be different from that of wild-type (+/+) mice. These results reveal no effect of Reln gene dosage and provide significant challenges to both the Reln and the neurodevelopmental hypotheses of the etiology of major psychopathologies. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

偏心磨损套管应力分布的双极坐标解答

因井眼狗腿度和钻柱的受力变形造成套管内壁磨损,导致套管抗挤毁强度和抗内压强度降低。内壁磨损套管的横截面形状多为月牙形,很难得到其应力分布的解析解。文章将其简化为偏心圆筒模型,并把直角坐标向双极坐标转换,得出了偏心磨损套管在内外压联合作用下应力分布的解析解。以139.7 mm×7.7 mm-N80套管为例,得出了套管剩余壁厚为4.2 mm时,偏心圆筒模型的应力分布曲线,确定了影响磨损套管应力分布的主要因素。     

Analysis and Optimization of Noise in Bipolar RF Harmonic Mixers

A noise analysis of bipolar harmonic mixers (BHM) used for direct-conversion receivers is presented in this paper. Analytical and simulated results for the transfer function of the mixer are presented. Simple analytical expressions describing noise contribution from all sources are derived. Estimation of flicker noise quite agrees with harmonic-balance simulation results. Based on the derived expressions, total time average noise power spectral density (PSD) at the output is compared with simulation results. For the recommended regions of operation, error is less than 20%. The overall BHM noise figure (NF) is calculated and optimized based on a simple extracted formula. Errors introduced by analysis remain within a 1.5-dB margin with respect to simulation results. The validity of analysis for high frequencies is justified. The effect of flicker noise coefficient on the overall mixer NF is compared for different available processes.     

Effect of epitaxial realignment on the leakage behavior of arsenic-implanted,as-deposited polycrystalline Si-on-single crystal Si diodes

When dopants are indiffused from a heavily implanted polycrystalline silicon film deposited on a silicon substrate, high thermal budget annealing can cause the interfacial “native” oxide at the polycrystalline silicon-single crystal silicon interface to break up into oxide clusters, causing epitaxial realignment of the polycrystalline silicon layer with respect to the silicon substrate. Anomalous transient enhanced diffusion occurs during epitaxial realignment and this has adverse effects on the leakage characteristics of the shallow junctions formed in the silicon substrate using this technique. The degradation in the leakage current is mainly due to increased generation-recombination in the depletion region because of defect injection from the interface.