Weak Delocalization in Graphene on a Ferromagnetic Insulating Film

Graphene has been predicted to develop a magnetic moment by proximity effect when placed on a ferromagnetic film, a promise that could open exciting possibilities in the fields of spintronics and magnetic data recording. In this work, the interplay between the magnetoresistance of graphene and the magnetization of an underlying ferromagnetic insulating film is studied in detail. A clear correlation between both magnitudes is observed but through a careful modeling of the magnetization and the weak localization measurements, that such correspondence can be explained by the effects of the magnetic stray fields arising from the ferromagnetic insulator is found. The results emphasize the complexity arising at the interface between magnetic and 2D materials.     

Al2O3–CaO macroporous ceramics containing hydrocalumite-like phases

A mechanism to explain the lower onset strengthening temperature induced by CaCO₃ in alumina-based macroporous ceramics is proposed, which relies on hydrocalumite-like phase formation during processing. Close to 600 °C, such phases are decomposed to lime and mayenite (12CaO·7Al₂O₃), where the latter, due to its intrinsic nanoporosity and high thermal reactivity, generates bonds between the ceramic particles at ∼700 °C, resulting in microstructure strengthening. Based on this premise, the authors concluded that other Ca²⁺ sources could act similarly. Indeed, compositions containing Ca(OH)₂ or CaO showed the same effect on the onset strengthening temperature, which reinforces the proposed mechanism. The results attained indicated that macroporous insulators could be thermally treated at lower temperatures, just to acquire enough mechanical strength for installation, finishing in-situ their firing process. Besides that, lower sintering temperatures could be used to produce macroporous ceramics that would be applied in low thermal demand environments, e.g. aluminum industries.     

温度、湿度和风速对红外检测绝缘子的影响分析

为研究温度、湿度和风速对红外成像法检测绝缘子的影响,提高绝缘子红外检测的准确性,以110 kV绝缘子串为例,采用有限元分析方法研究温度、湿度和风速对均匀污秽和非均匀污秽条件下绝缘子串温度分布的影响。仿真表明:相同条件下,均匀污秽绝缘子温度略高于非均匀污秽绝缘子温度;温度对绝缘子红外检测影响较小;相对环境湿度显著影响绝缘子温度分布,湿度越低,越不利于检测,容易造成误检,其中相对湿度80%时,零值绝缘子容易被检测;风速对绝缘子温度分布影响较大,风速越大,对绝缘子温度分布影响越大,因此,对绝缘子进行红外检测时,风速不宜大于4 m/s。仿真结果可用于指导电网红外巡检工作,保障绝缘子红外巡检结果的准确性,从而实现电网的安全稳定运行。     

Motion-based method for estimating time required to attach self-adhesive insulators

A self-adhesive insulator is a component of a home appliance that is used to suppress vibration or prevent humidity affecting the internal parts of the appliance. There is a wide range of types and designs available, allowing them to be applied to areas having different shapes. At the design stage, once an insulator design has been developed sufficiently to identify its dimensions and features, the attaching time and baseline cost must be estimated with reasonable accuracy to enable a comparison of vendor quotes. However, the current estimation method is not sufficiently accurate in terms of the baseline cost. This paper presents a motion-based time-estimating scheme with which the time required for the attachment of such insulators can be calculated more accurately. The scheme has been developed by analyzing the motions needed to attach 350 insulators and then designating representative motions and their time values. For this purpose, a modular arrangement of predetermined time standards (MODAPTS) is adopted. Motion-based time-estimation method is useful in terms of simplicity and accuracy. It enables design engineers to estimate the time required for the attachment based only on a drawing of the insulator and a few MODAPTS rules. Estimates made with this method should vary from the actual value by no more than 9.5%.     

Effect of MgO Addition on the Bondability and Interfacial Reaction between Dielectric and Glass-Ceramics for the Fabrication of Multi-Component Ceramic Substrates

Bondability and interfacial reaction between dielectric and insulator layers have been examined to obtain a basic understanding of bonding mechanisms. Lead-containing complex perovskite was used as a dielectric material. Two kinds of glass-ceramics were used as insulator material; lead borosilicate glass containing Al_2O3 (insulator A) and the same containing Al₂O₃ and M_gO (insulator B). Dielectric and insulator layers did not bond when insulator A was used. When insulator B was used, however, strong bonding was achieved between the two layers by firing the powder compacts at temperatures between 800° and 1000°C. Addition of M_gO to lead borosilicate glass increased the thermal expansion coefficient to that of the dielectric and enhanced the formation of reaction layers, resulting in good bonding. Two reaction layers were identified. The main reaction products were enstatite and bredigite for one layer contacting the dielectric, and enstatite and a compound with the same diffraction pattern as that of faujasite for the other layers contacting insulator B.     

Broadband photovoltaic effect of n-type topological insulator Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript> films on p-type Si substrates

We report the photovoltaic effects of n-type topological insulator (TI) Bi2Te3 films grown on p-type Si substrates by chemical vapor deposition (CVD).The films containing large nanoplates with a smooth surface formed on p-Si exhibit good p-n diode characteristics under dark and light illumination conditions and display a good photovoltaic effect under the broadband range from ultraviolet (UV) to near infrared (NIR) wavelengths.Under the light illumination with a wavelength of 1,000 nm,a short circuit current (Isc) of 19.2 μA and an open circuit voltage (Voc) of 235 mV are achieved.The maximum fill factor (FF) increases with a decrease in the wavelength or light density,achieving a value of 35.6％ under 600 nm illumination.The photoresponse of the n-Bi2Te3/p-Si device can be effectively switched between the on and off modes in millisecond time scale.These findings are important for both the fundamental understanding and solar cell device applications of TI materials.     

Ultra‐Broadband Flexible Photodetector Based on Topological Crystalline Insulator SnTe with High Responsivity

Topological crystalline insulators (TCIs) are predicted to be a promising candidate material for ultra‐broadband photodetectors ranging from ultraviolet (UV) to terahertz (THz) due to its gapless surface state and narrow bulk bandgap. However, the low responsivity of TCIs‐based photodetectors limits their further applications. In this regard, a high‐performance photodetector based on SnTe, a recently developed TCI, working in a broadband wavelength range from deep UV to mid‐IR with high responsivity is reported. By taking advantage of the strong light absorption and small bandgap of SnTe, photodetectors based on the as‐grown SnTe crystalline nanoflakes as well as specific short channel length achieve a high responsivity (71.11 A W^?1 at 254 nm, 49.03 A W^?1 at 635 nm, 10.91 A W^?1 at 1550 nm, and 4.17 A W^?1 at 4650 nm) and an ultra‐broad spectral response (254–4650 nm) simultaneously. Moreover, for the first time, a durable flexible SnTe photodetector fabricated directly on a polyethylene terephthalate film is demonstrated. These results prove the great potential of TCIs as a promising material for integrated and flexible optoelectronic devices.     

复合绝缘子动载机械性能探讨

对不同长度复合绝缘子在不同基础拉伸载荷下叠加不同强度扭矩进行了拉扭组合试验,并分别对单联和双联、压接式和楔接式复合绝缘子进行了拉扭组合试验。试验结果表明,在正常情况下耐张串载荷对复合绝缘子蠕变性能的影响不大,因此复合绝缘子可应用于耐张串。     

河南省线路用复合绝缘子运行情况分析

复合绝缘子以优良的防污闪性能在电力系统得到了普遍认可和大量使用,总体来讲复合绝缘子运行情况良好,但也存在一定问题和潜在的危险。一些事故和异常不仅与产品设计、产品质量有关,也与运行经验不足有关。作者根据河南省不同时期挂网运行的复合绝缘子的全面抽检试验结果对其运行状况和性能进行了总体评价,并提出了较为实用的现场测试“四步法”。     

合成绝缘子材料的TSC试验研究

通过采用热刺激电流法对合成绝缘子材料进行热刺激电流(TSC)的探索性对比测试,力图探索热刺激电流法在评价合成绝缘子特性中的应用可能性.文中对比了同一厂家的两批合成绝缘子试样的TSC特性,初步的试验发现,新旧合成绝缘子之间的TSC测试结果是明显不同的,结合试样的憎水性试验以及微观结构的分析,表明TSC测试结果在一定程度上能够与合成绝缘子材料的老化联系起来.通过深入系统的研究合成绝缘子的TSC特性和合成绝缘子材料的老化特性之间的关系,将能够为合成绝缘子老化特性及老化程度的评价提供新的方法.