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1.
Learning Association Rules and Tracking the Changing Concepts on Webpages: An Effective Pornographic Websites Filtering Approach 下载免费PDF全文
Jyh-Jian Sheu 《电子科技学刊:英文版》2018,16(1):24-36
We applied the decision tree algorithm to learn association rules between webpage’s category (pornographic or normal) and the critical features. Based on these rules, we proposed an efficient method of filtering pornographic webpages with the following major advantages: 1) a weighted window-based technique was proposed to estimate for the condition of concept drift for the keywords found recently in pornographic webpages; 2) checking only contexts of webpages without scanning pictures; 3) an incremental learning mechanism was designed to incrementally update the pornographic keyword database. 相似文献
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Business processes are dynamic and change due to diverse factors. While existing approaches aim to detect drifts in the process structure, Tesseract looks for temporal drifts in activity interim times. This orthogonal view on the process extends the traditional data cube of events – case id, activities and timestamps – by a fourth dimension and improves the operational support by a visualization of temporal drifts in real-time.Insights about temporal deviations lead to an augmented awareness of imminent failures or improved service times. The detection of related structural concept drifts can be improved by early warning, as operation times of critical parts often increase before they catastrophically fail. 相似文献
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在新时期下,传统的英语教学方法已经不适合学生的学习和发展了,经过笔者的研究和分析发现,小学生对故事似乎是非常感兴趣,所以就针对多媒体技术在小学英语故事教学中的应用进行了几点尝试。 相似文献
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Paulina Koodziej-Wojnar Joanna Borkowska Zofia Wicik Anna Domaszewska-Szostek Jacek Poosak Marta Ckaa-Jakimowicz Olga Bujanowska Monika Puzianowska-Kuznicka 《International journal of molecular sciences》2021,22(1)
5-Hydroxymethylcytosine (5hmC) is a functionally active epigenetic modification. We analyzed whether changes in DNA 5-hydroxymethylation are an element of age-related epigenetic drift. We tested primary fibroblast cultures originating from individuals aged 22–35 years and 74–94 years. Global quantities of methylation-related DNA modifications were estimated by the dot blot and colorimetric methods. Regions of the genome differentially hydroxymethylated with age (DHMRs) were identified by hMeDIP-seq and the MEDIPS and DiffBind algorithms. Global levels of DNA modifications were not associated with age. We identified numerous DHMRs that were enriched within introns and intergenic regions and most commonly associated with the H3K4me1 histone mark, promoter-flanking regions, and CCCTC-binding factor (CTCF) binding sites. However, only seven DHMRs were identified by both algorithms and all of their settings. Among them, hypo-hydroxymethylated DHMR in the intron of Rab Escort Protein 1 (CHM) coexisted with increased expression in old cells, while increased 5-hydroxymethylation in the bodies of Arginine and Serine Rich Protein 1 (RSRP1) and Mitochondrial Poly(A) Polymerase (MTPAP) did not change their expression. These age-related differences were not associated with changes in the expression of any of the ten-eleven translocation (TET) enzymes or their activity. In conclusion, the distribution of 5hmC in DNA of in vivo aged human fibroblasts underwent age-associated modifications. The identified DHMRs are, likely, marker changes. 相似文献
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An improved multi-recessed 4H–SiC metal semiconductor field effect transistor (MRD-MESFET) with double-recessed p-buffer layer (DRB-MESFET) is proposed in this paper. By introducing a double-recessed p-buffer layer, the gate depletion layer is further modulated, and higher drain saturation current and DC transconductance are obtained compared with the MRD-MESFET. The simulations show that the drain saturation current of the DRB-MESFET is about 42.4% larger than that of the MRD-MESFET. The DC transconductance of the DRB-MESFET is almost 15% higher than that of the MRD-MESFET and very close to that of double-recessed structure (DR-MESFET) at the bias conditions of Vgs=0 V and Vds=40 V. The proposed structure has an improvement of 26.1% and 74.2% in the output maximum power density compared with that of the MRD-MESFET and DR-MESFET, respectively. In the meanwhile, the proposed structure possesses smaller gate-source capacitance, which results in better RF characteristics. 相似文献
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In a passive ultra-high frequency (UHF) radio frequency identification (RFID) system, the recovery of collided tag signals on a physical layer can enhance identification efficiency. However, frequency drift is very common in UHF RFID systems, and will have an influence on the recovery on the physical layer. To address the problem of recovery with the frequency drift, this paper adopts a radial basis function (RBF) network to separate the collision signals, and decode the signals via FM0 to recovery collided RFID tags. Numerical results show that the method in this paper has better performance of symbol error rate (SER) and separation efficiency compared to conventional methods when frequency drift occurs. 相似文献
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ABSTRACTThe RF output power dissipated per unit area is calculated using Runge-Kutta method for the high-moderate-moderate-high (n+-n-p-p+) doping profile of double drift region (DDR)-based impact avalanche transit time (IMPATT) diode by taking different substrate at Ka band. Those substrates are silicon, gallium arsenide, germanium, wurtzite gallium nitride, indium phosphide and 4H-silicon carbide. A comparative study regarding power dissipation ability by the IMPATT using different material is being presented thereby modelling the DDR IMPATT diode in a one-dimensional structure. The IMPATT based on 4H-SiC element has highest power density in the order of 1010 Wm?2 and the Si-based counterpart has lowest power density of order 106 Wm?2 throughout the Ka band. So, 4H-SiC-based IMPATT should be preferable over others for the power density preference based application. This result will be helpful to estimate the power density of the IMPATT for any doping profile and to select the proper element for the optimum design of the IMPATT as far as power density is concerned in the Ka band. Also, we have focused on variation of power density with different junction temperatures and modelled the heat sink with analysis of thermal resistances. 相似文献
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