Polarisation behaviour of diode lasers with frequency selective feedback

The paper reviews recent results obtained with diode lasers used in external hybrid cavities with frequency selective feedback. Such cavities attract continuing interest for several reasons. They generate a tunable single laser mode with very low linewidths (usually a few tens of kilohertz). Very wide discrete tunable ranges over 100 nm for Fabry-Perot type and over 200 nm for quantum well lasers are achieved. They can be made to oscillate in a tunable mode having the desired polarization state,TE orTM and, in some cases, simultaneously atTE andTM. This is done by designing a cavity that increases strongly theTM/TE intensity ratio and by using coatings on one laser facet that greatly lower bothTE andTM reflectivities. High-speed polarization switching in the gigahertz range is possible by inserting passive or active polarization selecting elements in the cavity. For all these reasons hybrid external cavities are attractive for applications in optical metrology, spectroscopy and optical communications. Moreover, the external cavity configuration allows the study of physical mechanisms in the laser diode by inducing on purpose phenomena that would have been otherwise impossible to achieve with free-running lasers.     

Co掺杂对Ba0.6Sr0.4TiO3薄膜介电性能的影响

利用溶胶凝胶工艺在Pt/TiO2/SiO2/Si衬底上制备了Co掺杂量为0～10%(摩尔分数)的(Ba0.6Sr0.4) Ti1-xCoxO3薄膜.研究了薄膜的结构、表面形貌、介电性能与Co掺杂量的关系.薄膜的介电损耗随着Co含量的增加而减少,在摩尔含量10%时达到最小值0.0128.FOM值在摩尔含量为2.5%达到最大值20,它的介电常数、介电损耗和调谐量分别为639.42、0.0218、43.6%.     

A comparative study of tunable Ba1−x Sr x TiO3 thin film capacitors prepared by rf-sputtering and liquid-phase deposition

Abstract

Ba_1?x Sr _x TiO₃ thin film capacitors have been successfully prepared using rf-sputtering and a metal organic deposition (MOD) method. The structure, microstructure and composition of the BSTO films are presented. Films grown on lanthanum aluminate LAO(100) showed c-axis preferred growth orientation. Broad paraelectric-to-ferroelectric transitions were observed in films prepared by both methods. The tunability of the capacitance by means of an appplied electric field is examined using various capacitor geometries. A decrease in the capacitance exceeding 75% at 77 K was obtained from the MOD deposited films under an electric field strength of 0.3 MV/cm. On the other hand, the tunability of the capacitance in the rf-sputtered films ranged from 5 to 10% at 77 K and at 20 kV/cm, while it exceeds 50% in some films. The results are compared with the predictions of Devonshire's phenomenological theory.     

液晶光子晶体可调自准直特性研究

液晶材料光子晶体由于具有可调谐性而得到了广泛的研究,但目前的研究主要集中在可调的光子带隙特性上。详细研究了液晶光子晶体的可调自准直特性。使用平面波展开法分析了液晶旋转角对光子晶体自准直频率的影响,并使用时域有限差分法对光在液晶光子晶体中的传输进行了仿真。结果表明,通过控制液晶旋转角,可以对光子晶体自准直频率进行调节,从而满足不同频率自准直的需要。     

Tunable Optical Mode Ferromagnetic Resonance in FeCoB/Ru/FeCoB Synthetic Antiferromagnetic Trilayers under Uniaxial Magnetic Anisotropy

Ferromagnetic resonance (FMR) is one of the most important characteristics of soft magnetic materials, which practically sets the maximum operation speed of these materials. There are two FMR modes in exchange coupled ferromagnet/nonmagnet/ferromagnet sandwich films. The acoustic mode has relatively lower frequency and is widely used in radio‐frequency/microwave devices, while the optical mode is largely neglected due to its tiny permeability even though it supports much higher frequency. Here, a realistic method is reported to enhance the permeability in the optical mode to an applicable level. FeCoB/Ru/FeCoB trilayers are carefully engineered with both uniaxial magnetic anisotropy and antiferromagnetic interlayer exchange coupling. This special magnetic structure exhibits a high optical mode frequency up to 11.28 GHz and a maximum permeability of 200 at resonance. An abnormally low inverse switch field (<200 Oe, less than 1/5 of the single layer) is observed which can effectively switch the system from optical mode with higher frequency into acoustic mode with lower frequency. The optical mode frequency and inverse switch field can be controlled by tailoring the interlayer coupling strengths and the uniaxial anisotropy fields, respectively. The tunable optical mode resonance thus can increase operation frequency while reduce operation field overhead in FMR based devices.     

High Efficiency Poly(acrylonitrile) Electrospun Nanofiber Membranes for Airborne Nanomaterials Filtration

The potential of poly(acrylonitrile) electrospun membranes with tuneable pore size and fiber distributions were investigated for airborne fine‐particle filtration for the first time. The impact of solution concentration on final membrane properties are evaluated for the purpose of designing separation materials with higher separation efficiency. The properties of fibers and membranes are investigated systematically: the average pore distribution, as characterized by capillary flow porometry, and thermo‐mechanical properties of the mats are found to be dependent on fiber diameter and on specific electrospinning conditions. Filtration efficiency and pressure drop are calculated from measurement of penetration through the membranes using potassium chloride (KCl) aerosol particles ranging from 300 nm to 12 μm diameter. The PAN membranes exhibited separation efficiencies in the range of 73.8–99.78% and a typical quality factor 0.0224 (1 Pa^?1) for 12 wt% PAN with nanofibers having a diameter of 858 nm. Concerning air flow rate, the quality factor and filtration efficiency of the electrospun membranes at higher face velocity are much more stable than for commercial membranes. The results suggest that the structure of electrospun membranes is the best for air filtration in terms of filtration stability at high air flow rate.

     

Electronically tunable sinusoidal oscillator circuit with current and voltage outputs

A new circuit configuration for the realisation of an electronically tunable sinusoidal oscillator is presented. The proposed circuit uses only one current backward transconductance amplifier (CBTA), two grounded capacitors and one resistor. Using current controlled CBTA (CC-CBTA) instead of the CBTA, the resistor can be completely removed. It has also current-mode (CM) and voltage-mode (VM) outputs, simultaneously. The workability of the proposed structure has been demonstrated by both simulation and experimental results.     

Bi_(1.5)Zn_(1.0)Nb_(1.5)O_7/Ba_(0.5)Sr_(0.5)TiO_3复合薄膜介电性能的频率特性研究

采用射频磁控溅射法在蓝宝石基片上制备了Bi1.5Zn1.0Nb1.5O7(BZN)/Ba0.5Sr0.5TiO3(BST)双层复合薄膜,并研究了该薄膜在100 kHz~6 GHz频率范围内的介电性能。研究结果表明,BZN/BST复合薄膜的介电性能具有良好的频率稳定性。该复合薄膜的介电常数在研究的频率范围内基本与频率无关;其介电损耗在频率低于1 GHz时与频率无关,在频率高于1 GHz时随频率的上升而略微增大;薄膜在研究的频率范围内具有稳定的介电调谐率。     

铁电态-顺电态双层薄膜的高介电调谐

基于Landau-Devonshire自由能理论建立了热力学模型,对生长在(001)SrTiO3衬底上的PbZr0.4Ti0.6O3(PZT)/SrTiO3(STO)双层异质外延结构铁电薄膜以及不受约束的双层薄膜的介电响应与调谐率进行了研究。结果表明,在两层薄膜为无约束的自由薄膜情况下,STO厚度占双层薄膜总厚度的百分比为30%时,相对介电响应达到最大值约3.3×105,当两薄膜为异质外延结构时,其百分比为51%时,相对介电响应达到最大值约4×105。同时,调谐率还随外加电场的增大而增大,在临界百分比时,调谐率可达到约99%。     

La2O3掺杂对BST/MgO复合陶瓷显微结构和性能的影响

采用固相反应法制备了未掺杂和La2O3掺杂(0.5%、1%、2%(摩尔分数))的Ba0.55Sr0.45TiO3/MgO复合陶瓷材料,并研究了它们的显微结构和各种介电性能.研究结果表明,La2O3除一部分会进入BST晶格獭代Ba或Sr的位置外,还会有一部分与MgO等形成无定形态物质滞留在晶界,起到抑制BST晶粒生长的作用.BST/MgO复合陶瓷的居里温度随La2O3掺杂量的增大而降低,居里温度的降低导致了介电常数的减小.适量的La2O3掺杂提高了复合陶瓷的调谐性,而且La2O3掺杂明显降低了复合陶瓷的微波介电损耗.0.5%(摩尔分数)La2O3掺杂的BST/MgO复合陶瓷具有最佳的综合介电性能,其在10kHz下的调谐性为6.9%(2kV/mm),3.99GHz时的介电常数和介电损耗分别为87.5和3.35×10-3,基本可以满足铁电移相器的使用要求.