p-Si薄膜生长的ECR-CVD等离子体系统的结构设计

提出了一种生长p-Si薄膜的ECR-PECVD等离子体系统。系统采用永磁铁和线圈相结合，改善反应室磁场的均匀性；微波窗口设计成多层结构．避免窗口污染；衬底托架移动和旋转利于改善生长膜的均匀性。     

InP基应变补偿结构偏振不灵敏半导体光放大器制作的研究

为了制备偏振不灵敏的半导体光放大器(SOA)，将有源区设计为由4个压应变、3个张应变阱层及晶格匹配的垒层InGaAsP交替组合而成的应变补偿结构。器件做成带有倾角的扇形脊形波导结构，避免了常规制作SOA的复杂工艺。对样品3在80～125mA电流范围内，获得了偏振灵敏度≤0．6dB．最小可达0．1dB；较大的电流范围内FWHM值为40nm。     

阴/阳极电流密度对铝合金微弧氧化陶瓷膜耐蚀性的影响

为了弄清铝合金微弧氧化重要参数对其耐点蚀和微硬度的影响,在氢氧化钠和硅酸钠溶液中,保持阳极电流密度为15A/dm2,制备了阴/阳极电流密度比在0.6～0.8之间的铝合金微弧氧化陶瓷膜.结果表明:阴/阳极电流密度比对陶瓷膜的抗点腐蚀性和硬度有很强的影响;不同阴/阳极电流密度比所制备的陶瓷膜微观结构差异较大,陶瓷膜抗点腐蚀性和硬度的不同是由这种微观结构差异所引起的.     

阴/阳极电压对钛合金微弧氧化膜特性影响的研究

在Na2CO3-Na2SiO3溶液中,采用正负不对称交流微弧氧化电源在钛合金上制备出了多孔金红石TiO2薄膜.利用X射线衍射仪(XRD)和扫描电镜(SEM)分别研究了钛合金微弧氧化陶瓷膜的相组成和微观结构,实验结果表明,氧化膜主要由大量金红石和少量锐钛矿TiO2组成;膜表面布满了尺寸不到4μm的小孔,膜截面没有明显的疏松层和致密层之分.对微弧氧化样品在3.5%NaCl溶液中的抗点腐蚀测试表明,阴极峰值电压与样品的耐腐蚀性能密切相关,当阴、阳极峰值电压和处理时间分别为45、320V和30min所制备的钛合金微弧氧化样品其抗点腐蚀能力最强.     

二十一世纪先进工业材料─混凝土

二十一世纪先进工业材料─混凝土阎文付，肖光浩，卢秋虹，龙北红，腾凤恩吉林大学材料科学研究所１．引言混凝土是世界上最通用和最广泛生产的材料。其原因：（１）．原料来源丰富；（２）．生产成本低；（３）．具有优良的耐水性。虽然混凝土在韧性方面显得相对薄弱，但...     

Structure and magnetic properties of columnar Fe-N thin films deposited by direct current magnetron sputtering

Columnar Fe-N thin films with thickness ranging from 30 to 150 nm were deposited by direct current magnetron sputtering using an Ar/N2 gas mixture (V(N2)/V(N2+Ar)=5%) on corning glass substrates. The structure, surface morphology and magnetic properties were investigated using X-ray diffractometry(XRD), scanning electron microscopy, atomic force microscopy, transmission electron microscopy(TEM) and superconducting quantum interference magnetometry. XRD investigation shows that Fe-N films exhibit amorphous-like structures; however, TEM measurements indicate the synthesis of mixture phases of α-Fe+ζ-Fe2N+ε-Fe3N in these films. The magnetic anisotropy and coercivity of Fe-N thin films exhibit strong dependence on the film growth behavior and surface morphology. With increasing the height of Fe-N films with column structures, the coercivity increases from 7.96 kA/m to 22.28 kA/m in the direction parallel to the film surface. In perpendicular direction the coercivity only increases slightly from 39.79 kA/m to 43.77 kA/m. However, the values of anisotropy field increase from 0.79×106 to 1.44×106 A/m, which is mainly attributed to the shape anisotropy of elongated columns due to the fact that the difference of magneto-crystalline anisotropy among these Fe-N films is small. The saturation magnetizations of Fe-N films vary with increasing film thickness from 23.5 to 85.1 A-m2/kg.